Patent US4523971A successfully refreshed from Google Patents.
US4523971A
Expired / Lapsed
US
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Programmable ion beam patterning system
Assignee: International Business Machines Corp
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Filing: 1984-06-28
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Granted: 1985-06-18
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Expires: 2004-06-28
Abstract
Abstract This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.
Inventors
- 👤 Jerome J. Cuomo
- 👤 James M. E. Harper
- 👤 Harold R. Kaufman
- 👤 James L. Speidell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:35
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/46; H; H01; H01J; H01J37/00; H01J37/02; H01J37/04; H01J37/09; H01J37/30; H01J37/305; H01J37/3053; H01J37/317; H01J37/3178
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
105 words
An ion beam system for producing a patterned ion beam without the need for masks, comprising: an ion source for producing ions, a programmable grid having a plurality of extraction apertures therein through which said ions can selectively be extracted from said ion source to produce said patterned beam, electrical bias means for electrically biasing individual ones of said extraction apertures for selectively extracting ions from said ion source or preventing the extraction of said ions, thereby producing said ion beam pattern, means for selectively changing the electrical bias on individual ones of said extraction apertures in order to change said selected ion beam pattern.
Claim 2
Dependent Claim
105 words
An ion beam system for producing a patterned ion beam without the need for masks, comprising: an ion source for producing ions, a programmable grid having a plurality of extraction apertures therein through which said ions can selectively be extracted from said ion source to produce said patterned beam, electrical bias means for electrically biasing individual ones of said extraction apertures for selectively extracting ions from said ion source or preventing the extraction of said ions, thereby producing said ion beam pattern, means for selectively changing the electrical bias on individual ones of said extraction apertures in order to change said selected ion beam pattern.
Claim 3
Dependent Claim
11 words
The system of claim 1, where said ions are positively charged.
Claim 4
Dependent Claim
11 words
The system of claim 2, where said ions are negatively charged.
Claim 5
Dependent Claim
40 words
The system of claim 1, further including a screen grid located between said ion source and said programmable grid, said screen grid being biased to extract said ions through said screen grid to provide collimated ions to said programmable grid.
Claim 6
Dependent Claim
53 words
The system of claim 1, where said programmable grid is an insulating layer having said apertures therein, and said electrical bias means including a patterned conductive layer located on said insulating layer, said conductive layer producing an electrical potential at those apertures where it is desired to extract ions through said programmable grid.
Claim 7
Dependent Claim
17 words
The system of claim 1, further including a substrate onto which said patterned ion beam is incident.
Claim 8
Dependent Claim
30 words
The system of claim 1, where said electrical bias means includes a voltage source and addressing means for producing an electrical bias at selected extraction apertures of said programmable grid.
Claim 9
Dependent Claim
37 words
The system of claim 1, where said ion source includes means for producing a plasma of said ions, said programmable grid being electrically biased at particular locations therein to extract ions from said plasma at said locations.
Claim 10
Dependent Claim
114 words
An ion beam system for producing a patterned ion beam without the need for masks, said system including: means for creating a plasma of ions in a vacuum chamber, a programmable grid located adjacent to said plasma of ions for extracting ions from said plasma at selected locations of said grid, said grid including a plurality of apertures through which an extracted ions pass into said vacuum chamber, and means for controlling the extraction of ions through selected apertures in said grid, said means for controlling including means for extracting ions through selected ones of said apertures and for preventing the extraction of ions from said plasma through other selected apertures of said grid.
Claim 11
Dependent Claim
114 words
An ion beam system for producing a patterned ion beam without the need for masks, said system including: means for creating a plasma of ions in a vacuum chamber, a programmable grid located adjacent to said plasma of ions for extracting ions from said plasma at selected locations of said grid, said grid including a plurality of apertures through which an extracted ions pass into said vacuum chamber, and means for controlling the extraction of ions through selected apertures in said grid, said means for controlling including means for extracting ions through selected ones of said apertures and for preventing the extraction of ions from said plasma through other selected apertures of said grid.
Claim 12
Dependent Claim
41 words
The system of claim 9, further including means for selectively addressing selected apertures in said grid for the passage of ions therethrough, and for changing the location of said selected apertures in order to produce different patterns of said ion beam.
Claim 13
Dependent Claim
45 words
The system of claim 10, where said means for extracting ions through selected apertures of said grid includes electrical bias means for producing bias voltages at those apertures of said grid through which said ions are to pass from said plasma into said vaccum chamber.
Claim 14
Dependent Claim
41 words
The system of claim 11, where said electrical bias means includes a pattern of electrical conductors located adjacent to the apertures in said grid, said conductors being individually addressed to produce an electrical potential at selected individual ones of said conductors.
Claim 15
Dependent Claim
11 words
The system of claim 12, where said ions are positively charged.
Claim 16
Dependent Claim
11 words
The system of claim 12, where said ions are negatively charged.
Claim 17
Dependent Claim
22 words
The system of claim 12, further including a substrate located within said vacuum chamber, on which said patterned ion beam is incident.
Claim 18
Dependent Claim
98 words
An ion beam system for providing patterned ion beams without the use of masks, comprising in combination: an ion source, a programmable grid adjacent to said source, said grid having a plurality of apertures therein through which said ions can selectively pass under control of an electrical control means, electrical control means for controlling which of said apertures said ions will pass through, to produce a patterned ion beam, and addressing means connected to said electrical control means for changing the locations of the apertures through which said ions will pass to produce a different pattern of ions.
Claim 19
Dependent Claim
98 words
An ion beam system for providing patterned ion beams without the use of masks, comprising in combination: an ion source, a programmable grid adjacent to said source, said grid having a plurality of apertures therein through which said ions can selectively pass under control of an electrical control means, electrical control means for controlling which of said apertures said ions will pass through, to produce a patterned ion beam, and addressing means connected to said electrical control means for changing the locations of the apertures through which said ions will pass to produce a different pattern of ions.
Claim 20
Dependent Claim
40 words
The system of claim 16, where said electrical control means includes electrical conductor means adjacent to each of said apertures for applying different electrical potentials to selected ones of said apertures, and a voltage source for producing said electrical potential.
Claim 21
Dependent Claim
85 words
In an ion beam system including a vacuum chamber, an ion source for producing a plasma of ions, and a grid adjacent to said plasma having a plurality of apertures therein through which said ions can be extracted from said plasma, the improvement wherein said system includes electrical means for extracting ions through a selected pattern of said apertures while preventing the extraction of ions through others of said apertures and addressing means for changing the pattern of apertures through which said ions are extracted.
Claim 22
Dependent Claim
85 words
In an ion beam system including a vacuum chamber, an ion source for producing a plasma of ions, and a grid adjacent to said plasma having a plurality of apertures therein through which said ions can be extracted from said plasma, the improvement wherein said system includes electrical means for extracting ions through a selected pattern of said apertures while preventing the extraction of ions through others of said apertures and addressing means for changing the pattern of apertures through which said ions are extracted.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-17 | 1988-12-17 | 1989-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-17 | 1992-12-17 | 1993-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-17 | 1996-12-17 | 1997-06-18 | $7700.00 | Window Closed / Lapsed |