Fabrication of metal lines for semiconductor devices

Claim 1

A method of fabricating a submicron metal line for a semiconductor device gate electrode, comprising: depositing a layer of resist material on a semiconductor surface; defining a gate pattern in said resist material and producing therein a resist profile which exposes a predetermined area of said semiconductor surface; forming a gate support wall within and on the surface of said, resist profile by angled deposition of a gate support wall material to produce a gate cavity, said gate cavity having a bottom opening at said semiconductor surface, the dimension of said bottom opening being determined by the thickness of said layer, of resist material and the angle of deposition of said gate support wall material; forming within said gate cavity a gate electrode by deposition of a gate material, said gate material being deposited on at least a part of said exposed semiconductor surface at said bottom opening of said gate cavity to form a Schottky junction with said semiconductor and being further deposited on the interior surface of said gate support wall within said gate cavity and removing said layer of resist material to produce a linear gate electrode mounted on said semiconductor surface and supported by said gate support wall.

Claim 2

A method of fabricating a submicron metal line for a semiconductor device gate electrode, comprising: depositing a layer of resist material on a semiconductor surface; defining a gate pattern in said resist material and producing therein a resist profile which exposes a predetermined area of said semiconductor surface; forming a gate support wall within and on the surface of said, resist profile by angled deposition of a gate support wall material to produce a gate cavity, said gate cavity having a bottom opening at said semiconductor surface, the dimension of said bottom opening being determined by the thickness of said layer, of resist material and the angle of deposition of said gate support wall material; forming within said gate cavity a gate electrode by deposition of a gate material, said gate material being deposited on at least a part of said exposed semiconductor surface at said bottom opening of said gate cavity to form a Schottky junction with said semiconductor and being further deposited on the interior surface of said gate support wall within said gate cavity and removing said layer of resist material to produce a linear gate electrode mounted on said semiconductor surface and supported by said gate support wall.

Claim 11

A method of fabricating an inverted-L-shaped submicron line for a semiconductor device gate electrode, comprising: forming on a semiconductor wafer surface spaced source and drain electrodes; depositing a layer of resist material on said surface and said source and drain electrodes; defining a gate pattern in said resist material and producing from said pattern a resist cavity which exposes a length of said semiconductor surface between said source and drain electrodes, said resist cavity having a first wall adjacent said drain and a second wall adjacent said source; forming within said resist cavity by angled deposition an L-shaped gate support wall having a vertical leg portion formed on said first resist cavity wall and a horizontal leg portion formed on a first portion of said exposed semiconductor surface to define a bottom opening at said semiconductor surface which is offset toward said source electrode, said L-shaped gate support wall defining a gate cavity; forming within said gate cavity by deposition a gate material a gate electrode, said gate electrode being deposited on said L-shaped gate support wall and on only a portion of the length of said semiconductor surface exposed through said bottom opening, the portion of said gate electrode contacting said semiconductor surface comprising a gate leg which is offset toward said source electrode and which forms a Schottky interface with, said surface, said gate leg being assymmetrically located on said gate electrode, whereby said gate electrode is generally in the form of an inverted L; and removing said layer of resist material to produce a gate electrode mounted on said semiconductor surface and supported thereon by said L-shaped gate support wall.

Claim 12

A method of fabricating an inverted-L-shaped submicron line for a semiconductor device gate electrode, comprising: forming on a semiconductor wafer surface spaced source and drain electrodes; depositing a layer of resist material on said surface and said source and drain electrodes; defining a gate pattern in said resist material and producing from said pattern a resist cavity which exposes a length of said semiconductor surface between said source and drain electrodes, said resist cavity having a first wall adjacent said drain and a second wall adjacent said source; forming within said resist cavity by angled deposition an L-shaped gate support wall having a vertical leg portion formed on said first resist cavity wall and a horizontal leg portion formed on a first portion of said exposed semiconductor surface to define a bottom opening at said semiconductor surface which is offset toward said source electrode, said L-shaped gate support wall defining a gate cavity; forming within said gate cavity by deposition a gate material a gate electrode, said gate electrode being deposited on said L-shaped gate support wall and on only a portion of the length of said semiconductor surface exposed through said bottom opening, the portion of said gate electrode contacting said semiconductor surface comprising a gate leg which is offset toward said source electrode and which forms a Schottky interface with, said surface, said gate leg being assymmetrically located on said gate electrode, whereby said gate electrode is generally in the form of an inverted L; and removing said layer of resist material to produce a gate electrode mounted on said semiconductor surface and supported thereon by said L-shaped gate support wall.