Patent US4553154A successfully refreshed from Google Patents.
US4553154A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Light emitting diode electrode
Assignee: Sharp Corp
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Filing: 1984-12-13
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Granted: 1985-11-12
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Expires: 2004-12-13
Abstract
Abstract An electrode adapted for a semiconductor device, comprises an alloy layer formed with a gold basis, the alloy layer being disposed on the semiconductor device to provide an ohmic contact with the semiconductor device, a TiN layer, a Ti layer, and an Al layer which is bonded to an external terminal for the semiconductor device.
Inventors
- 👤 Katsumi Tsujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:47
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10H20/81; H10H20/822; H10H20/824; H10H20/831; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
80 words
An electrode adapted for a semiconductor device, comprising: a first layer being disposed on the semiconductor device and comprising material selected from the group consisting of Au-Be and Au-Zn for providing an ohmic contact with the semiconductor device; a second layer of TiN adjacent said first layer; a third layer of Ti adjacent said second layer; a fourth layer of Al adjacent said third layer of Ti; and an external lead for said semiconductor device bonded to said Al layer.
Claim 2
Dependent Claim
80 words
An electrode adapted for a semiconductor device, comprising: a first layer being disposed on the semiconductor device and comprising material selected from the group consisting of Au-Be and Au-Zn for providing an ohmic contact with the semiconductor device; a second layer of TiN adjacent said first layer; a third layer of Ti adjacent said second layer; a fourth layer of Al adjacent said third layer of Ti; and an external lead for said semiconductor device bonded to said Al layer.
Claim 3
Dependent Claim
44 words
The electrode a claim 1, further comprising a further alloy layer formed of a material selected from the group consisting of Au-Si and Au-Ge, the further alloy layer also being disposed on the semiconductor device to provide an ohmic contact with the semiconductor device.
Claim 4
Dependent Claim
14 words
The electrode of claim 1, wherein the semiconductor device is a light emitting diode.
Claim 5
Dependent Claim
13 words
The electrode of claim 1, wherein the semiconductor device is of III-V compounds.
Claim 6
Dependent Claim
18 words
The electrode of claim 1, wherein the semiconductor device comprises GaP, GaAs, GaAs 1-x P x , or
Claim 7
Dependent Claim
18 words
The electroce of claim 1, wherein said external lead comprises a gold lead bonded to said Al layer.
Claim 8
Dependent Claim
87 words
An electrode adapted for a semiconductor device, comprising: a first layer being disposed on the semiconductor device and comprising material selected from the group consisting of Au-Be and Au-Zn for providing an ohmic contact with the semiconductor device; a second layer of TiN adjacent said first layer; a third layer of Ti adjacent said second layer; a fourth layer of TiN adjacent said third layer; a fifth layer of Al adjacent said fourth layer; and an external lead for said semiconductor device bonded to said Al layer.
Claim 9
Dependent Claim
87 words
An electrode adapted for a semiconductor device, comprising: a first layer being disposed on the semiconductor device and comprising material selected from the group consisting of Au-Be and Au-Zn for providing an ohmic contact with the semiconductor device; a second layer of TiN adjacent said first layer; a third layer of Ti adjacent said second layer; a fourth layer of TiN adjacent said third layer; a fifth layer of Al adjacent said fourth layer; and an external lead for said semiconductor device bonded to said Al layer.
Claim 10
Dependent Claim
43 words
The electrode of claim 7, further comprising a further alloy layer formed of a material selected from the group consisting of Au-Si and Au-Ge, the further alloy layer being disposed on the semiconductor device to provide an ohmic contact with the semiconductor device.
Claim 11
Dependent Claim
14 words
The electrode of claim 7, wherein the semiconductor device is a light emitting diode.
Claim 12
Dependent Claim
13 words
The electrode of claim 7, wherein the semiconductor device is of III-V Compounds.
Claim 13
Dependent Claim
22 words
The electrode of claim 7, wherein the semiconductor device comprises GaP, GaAs, GaAs 1-x P x or Ga 1-x Al x As.
Claim 14
Dependent Claim
18 words
The electrode of claim 7, wherein said external lead comprises a gold lead bonded to said Al layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-11-11 | 1989-05-13 | 1989-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-11-11 | 1993-05-13 | 1993-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-11-11 | 1997-05-13 | 1997-11-12 | $7700.00 | Window Closed / Lapsed |