D-Latch circuit using CMOS transistors

Claim 2

A latch circuit comprising: first and second potential terminals; a CMOS inverter to which a logic signal is applied to the input; first and second MOS transistors connected in series to each other through a current path of said CMOS inverter and supplied, at their gates, with first and second control signals which are opposite in phase to each other, respectively; a third MOS transistor of a depletion type connected between said first MOS transistor and said first potential terminal and supplied, at its gate, with an output signal from said CMOS inverter; and a fourth MOS transistor of a depletion type connected between said second MOS transistor and said second potential terminal and supplied, at its gate, with an output signal from said CMOS inverter.

Claim 3

A latch circuit according to claim 1, wherein said CMOS inverter includes a fifth MOS transistor of one conductivity type and a sixth MOS transistor of an opposite conductivity type, one end of the current path of said fifth MOS transistor being connected to said first MOS transistor, the other end of the current path of said fifth MOS transistor being connected to said second MOS transistor through the current path of said sixth MOS transistor, and a logic signal being supplied to the gates of said fifth and sixth MOS transistors.

Claim 4

A latch circuit according to claim 2, wherein said first, fourth and fifth MOS transistors are p-channel MOS transistors; and said second, third and sixth MOS transistors are n-channel MOS transistors.

Claim 5

A latch circuit according to claim 3, wherein said first, second, fifth and sixth MOS transistors are each of a depletion type.

Claim 6

A latch circuit comprising: first and second potential terminals; a first CMOS inverter to which a logic signal is applied to the input; first and second MOS transistors connected in series to each other through a current path of said first CMOS inverter and supplied, at their gates, with first and second control signals which are opposite in phase to each other, respectively; a third MOS transistor of a depletion type connected between said first MOS transistor and said first potential terminal and supplied, at its gate, with an output signal from said first CMOS inverter; a fourth MOS transistor of a depletion type connected between said second MOS transistor and said second potential terminal and supplied, at its gate, with an output signal from said first CMOS inverter; a second CMOS inverter to which the output signal from said first CMOS inverter is supplied; fifth and sixth MOS transistors connected in series to each other through a current path of said second CMOS inverter and supplied, at their gates, with said second and first control signals, respectively; a seventh MOS transistor of a depletion type connected between said fifth MOS transistor and said first potential terminal and supplied, at its gate, with an output signal from said second CMOS inverter; and an eighth MOS transistor of a depletion type connected between the sixth MOS transistor and said second potential terminal and supplied, at its gate, with the output signal from said second CMOS inverter.

Claim 7

A latch circuit comprising: first and second potential terminals; a first CMOS inverter to which a logic signal is applied to the input; first and second MOS transistors connected in series to each other through a current path of said first CMOS inverter and supplied, at their gates, with first and second control signals which are opposite in phase to each other, respectively; a third MOS transistor of a depletion type connected between said first MOS transistor and said first potential terminal and supplied, at its gate, with an output signal from said first CMOS inverter; a fourth MOS transistor of a depletion type connected between said second MOS transistor and said second potential terminal and supplied, at its gate, with an output signal from said first CMOS inverter; a second CMOS inverter to which the output signal from said first CMOS inverter is supplied; fifth and sixth MOS transistors connected in series to each other through a current path of said second CMOS inverter and supplied, at their gates, with said second and first control signals, respectively; a seventh MOS transistor of a depletion type connected between said fifth MOS transistor and said first potential terminal and supplied, at its gate, with an output signal from said second CMOS inverter; and an eighth MOS transistor of a depletion type connected between the sixth MOS transistor and said second potential terminal and supplied, at its gate, with the output signal from said second CMOS inverter.

Claim 8

A latch circuit according to claim 5, wherein said first CMOS inverter includes a ninth MOS transistor of one conductivity type and a tenth MOS transistor of an opposite conductivity type, one end of the current path of said ninth MOS transistor being connected to said first MOS transistor, the other end of the current path of said ninth MOS transistor being connected to said second MOS transistor through the current path of said tenth MOS transistor, and a logic signal being supplied to the gates of said ninth and tenth MOS transistors; and wherein said second inverter includes an eleventh MOS transistor of one conductivity type and a twelfth MOS transistor of an opposite conductivity type, one end of the current path of said eleventh MOS transistor being connected to said fifth MOS transistor, the other end of the current path of said eleventh MOS transistor being connected to said sixth MOS transistor through the current path of said twelfth MOS transistor, and an output signal from said first inverter being supplied to the gates of said eleventh and twelfth MOS transistors.

Claim 9

A latch circuit according to claim 6, wherein said first, fourth, fifth, eighth, ninth and eleventh MOS transistors are p-channel MOS transistors; and said second, third, sixth, seventh, tenth and twelfth MOS transistors are n-channel MOS transistors.

Claim 10

A latch circuit according to claim 7, wherein said first, second, fifth, sixth, ninth, tenth, eleventh and twelfth MOS transistors are each of a depletion type.