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US4581101A
Expired / Lapsed
US
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Dry-etching process
Assignee: AGC Inc
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Filing: 1984-10-04
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Granted: 1986-04-08
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Expires: 2004-10-04
Abstract
Abstract A dry-etching process comprising dry-etching treatment of semiconductor material by action of a gas and, if necessary, cleaning treatment, characterized in that at least one of the dry-etching and cleaning treatments is conducted under action of a gas composed essentially of a fluorinated ether.
Inventors
- 👤 Makoto Senoue
- 👤 Kunihiko Terase
- 👤 Shinya Iida
- 👤 Hideo Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:41
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
35 words
A dry-etching process comprising a dry-etching treatment of a semiconductor material by action of a gas, characterized in that the dry-etching treatment is conducted under action of a gas composed essentially of a fluorinated ether.
Claim 2
Dependent Claim
35 words
A dry-etching process comprising a dry-etching treatment of a semiconductor material by action of a gas, characterized in that the dry-etching treatment is conducted under action of a gas composed essentially of a fluorinated ether.
Claim 3
Dependent Claim
14 words
The dry-etching process according to claim 1, wherein the fluorinated ether is a perfluoroepoxide.
Claim 4
Dependent Claim
32 words
A dry-etching process comprising a dry-etching treatment and a cleaning treatment of a semiconductor material, wherein said cleaning treatment is conducted under action of a gas composed essentially of a fluorinated ether.
Claim 5
Dependent Claim
32 words
A dry-etching process comprising a dry-etching treatment and a cleaning treatment of a semiconductor material, wherein said cleaning treatment is conducted under action of a gas composed essentially of a fluorinated ether.
Claim 6
Dependent Claim
41 words
The dry-etching process according to claim 3, wherein the dry-etching treatment is conducted under action of a gas composed essentially of a halogenated hydrocarbon, and the cleaning treatment is conducted under action of a gas composed essentially of a fluorinated ether.
Claim 7
Dependent Claim
27 words
The dry-etching process according to claim 3, wherein the dry-etching and cleaning treatments are conducted simultaneously under action of a gas composed essentially of a fluorinated ether.
Claim 8
Dependent Claim
25 words
The dry-etching process according to claims 1 or 3, wherein the gas composed essentially of a fluorinated ether, contains Cl 2 or a halogenated hydrocarbon.
Claim 9
Dependent Claim
18 words
The process according to claims 1 or 3, wherein additional etching gases are used with said fluorinated ether.
Claim 10
Dependent Claim
23 words
The process according to claims 1 or 3, wherein said fluorinated ether is selected from the group consisting of ##STR3## and mixtures thereof.
Claim 11
Dependent Claim
12 words
The process according to claim 8, wherein said fluorinated ether is ##STR4##
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-07 | 1989-10-07 | 1990-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-07 | 1993-10-07 | 1994-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-07 | 1997-10-07 | 1998-04-08 | $7700.00 | Window Closed / Lapsed |