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US4584608A Expired / Lapsed US ⏱️ 0.0 years remaining

Solid state image pickup device

Assignee: Sony Corp
•
Filing: 1983-04-09
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Granted: 1986-04-22
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Expires: 2003-04-09
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Abstract

Abstract A solid state image pickup device comprises a plurality of image pickup picture units (E 11 to E mn ) arrayed in horizontal and vertical rows and composed of first switching elements (S 11 to S mn ) and photoelectric transducers (D 11 to D mn : 24) electrically connected to the first switching elements (S 11 to S mn ), and a plurality of second switching elements (T' 1 to T' n ) connected in common to the respective vertical rows of the first switching elements (S 11 to S mn ) in the image pickup picture units (E 11 to E mn ) and each composed of a depletion-mode insulated-gate field-effect transistors. The horizontal rows of the first switching elements (S 11 to S mn ) in the image pickup picture units (E 11 to E mn ) are selectively energizable and the second switching elements (T' 1 to T' n ) are also selectively energizable to deliver signals based on signal charge generated by the photoelectric transducers (D 11 to D mn : 24) through the first and second switching elements (S 11 to S mn , T' 1 to T' n ) so as to produce an image pickup signal output.

Inventors

  • 👤 Mitsuo Soneda
  • 👤 Toshikazu Maekawa
  • 👤 Takaji Ohtsu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 11:56
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N25/00; H04N25/70; H04N25/76

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 340 words
A solid state image pickup device comprising a plurality of image pickup picture units (E 11 to E mn ) arrayed in horizontal and vertical rows and composed of a first plurality of switching elements (S 11 to S mn ) and a plurality of photoelectric transducers (D 11 to D mn :24) electrically connected to said first plurality of switching elements (S 11 to S mn ), and each of said first plurality of switching elements (S 11 to S mn ) composed of enhancement-mode insulated-gate field-effect transistors and a second plurality of switching elements (T' 1 to T' n ) connected in common to the respective vertical rows of said first plurality of switching elements (S 11 to S mn ) in said image pickup picture units (E 11 to E mn ) and each of said second plurality of switching elements composed of a depletion-mode insulated-gate field-effect transistor, and an arrangement wherein the horizontal rows of said first plurality of switching elements (S 11 to S mn ) in the image pickup picture units (E 11 to E mn ) are selectively energizable and said second plurality of switching elements (T' 1 to T' n ) are selectively energizable to deliver signals based on signal charges generated by said plurality of photoelectric transducers (D 11 to D mn ) through said first and second plurality of switching elements (S 11 to S mn , T' 1 to T' n ) so as to produce an image pickup signal output and wherein said second plurality of switching elements (T' 1 to T' n ) which comprise depletion-mode insulated-gate field-effect transistors have their sources respectively connected to the sources connected in common of the vertical rows of said plurality of enhancement-mode insulated-gate field-effect transistors which constitute said first switching elements (S 11 to S mn ) in said plurality of image pickup picture units (E 11 to E mn ), and the drains of said plurality of said depletion mode transistors connected in common to an output terminal (6).
Claim 2
Dependent Claim 340 words
A solid state image pickup device comprising a plurality of image pickup picture units (E 11 to E mn ) arrayed in horizontal and vertical rows and composed of a first plurality of switching elements (S 11 to S mn ) and a plurality of photoelectric transducers (D 11 to D mn :24) electrically connected to said first plurality of switching elements (S 11 to S mn ), and each of said first plurality of switching elements (S 11 to S mn ) composed of enhancement-mode insulated-gate field-effect transistors and a second plurality of switching elements (T' 1 to T' n ) connected in common to the respective vertical rows of said first plurality of switching elements (S 11 to S mn ) in said image pickup picture units (E 11 to E mn ) and each of said second plurality of switching elements composed of a depletion-mode insulated-gate field-effect transistor, and an arrangement wherein the horizontal rows of said first plurality of switching elements (S 11 to S mn ) in the image pickup picture units (E 11 to E mn ) are selectively energizable and said second plurality of switching elements (T' 1 to T' n ) are selectively energizable to deliver signals based on signal charges generated by said plurality of photoelectric transducers (D 11 to D mn ) through said first and second plurality of switching elements (S 11 to S mn , T' 1 to T' n ) so as to produce an image pickup signal output and wherein said second plurality of switching elements (T' 1 to T' n ) which comprise depletion-mode insulated-gate field-effect transistors have their sources respectively connected to the sources connected in common of the vertical rows of said plurality of enhancement-mode insulated-gate field-effect transistors which constitute said first switching elements (S 11 to S mn ) in said plurality of image pickup picture units (E 11 to E mn ), and the drains of said plurality of said depletion mode transistors connected in common to an output terminal (6).

References Cited (Backward Citations)

US4209806A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-04-21 1989-10-21 1990-04-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-04-21 1993-10-21 1994-04-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-04-21 1997-10-21 1998-04-22 $7700.00 Window Closed / Lapsed

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