US4590504A
Expired / Lapsed
US
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Nonvolatile MOS memory cell with tunneling element
Assignee: STMicroelectronics lnc USA
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Filing: 1982-12-28
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Granted: 1986-05-20
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Expires: 2002-12-28
Abstract
Abstract A nonvolatile memory cell (16) is fabricated on a substrate (12) and includes a source region (46) and drain regions (48, 50 and 52). Step oxides (40, 42 and 44) are fabricated respectively over the regions (46, 48 and 52). A gate oxide (58) is formed between the step oxides (40 and 42). A thin oxide tunneling element (74) is fabricated between the step oxides (42, 44) and over the drain region (50). A floating gate (38) comprising a polysilicon layer is fabricated over the step oxides (40, 42, 44), the gate oxide (58) and the tunneling element (74). An insulation layer (36) is fabricated over the floating gate (38). Finally, a control gate (34) is fabricated over the insulating layer (36) to provide capacitive coupling to the floating gate (38). The nonvolatile memory cell (16) has enhanced capacitive coupling between the control gate (34) and the floating gate (38) while it has a minimum of capacitive coupling between the floating gate (38) and the source and drain regions (46, 48, 50, 52) in the substrate (12).
Inventors
- 👤 Daniel C. Guterman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
138 words
A nonvolatile memory cell, comprising: a semiconductor substrate, source and drain regions implanted in said substrate below the surface thereof and defining a channel region therebetween, first and second step insulators fabricated respectively over said source and said drain regions, a gate insulator fabricated on said substrate over said channel region, a tunneling element fabricated on said substrate adjacent a side of one of said step insulators that is farthest from said gate insulator and overlying at least a portion of one of said regions, a conductive floating gate fabricated to extend over said gate insulator, said tunneling element and at least partially over each of said step insulators, an isolation insulator fabricated on said floating gate, and a conductive control gate fabricated on said isolation insulator wherein said control gate is capacitively coupled to said floating gate.
Claim 2
Dependent Claim
138 words
A nonvolatile memory cell, comprising: a semiconductor substrate, source and drain regions implanted in said substrate below the surface thereof and defining a channel region therebetween, first and second step insulators fabricated respectively over said source and said drain regions, a gate insulator fabricated on said substrate over said channel region, a tunneling element fabricated on said substrate adjacent a side of one of said step insulators that is farthest from said gate insulator and overlying at least a portion of one of said regions, a conductive floating gate fabricated to extend over said gate insulator, said tunneling element and at least partially over each of said step insulators, an isolation insulator fabricated on said floating gate, and a conductive control gate fabricated on said isolation insulator wherein said control gate is capacitively coupled to said floating gate.
Claim 3
Dependent Claim
38 words
A nonvolatile memory cell as recited in claim 1 including a third step insulator fabricated over a portion of the one of said regions beneath said floating gate, said tunneling element between said second and third step insulators.
Claim 4
Dependent Claim
24 words
A nonvolatile memory cell as recited in claim 1 wherein said gate insulator and said current tunneling element are thinner than said step insulators.
Claim 5
Dependent Claim
22 words
A nonvolatile memory cell as recited in claim 1 wherein said first and second step insulators and said gate insulator are oxides.
Claim 6
Dependent Claim
16 words
A nonvolatile memory cell as recited in claim 1 wherein said tunneling element is a dielectric.
Claim 7
Dependent Claim
16 words
A nonvolatile memory cell as recited in claim 1 wherein said tunneling element is an oxide.
Claim 8
Dependent Claim
237 words
A nonvolatile memory cell comprising: a semiconductor substrate, a source region formed in said substrate below and adjacent to the surface thereof, a first step oxide formed from said substrate above said source region. a first drain region formed in said substrate below and adjacent to the surface thereof, a second step oxide formed from said substrate above said first drain region, said second step oxide laterally offset from said first step oxide and defining a channel region therebetween, a gate oxide formed on the surface of said substrate between said first and second step oxides, a second drain region in said substrate at the surface thereof adjacent said second step oxide, a third drain region formed in said substrate below and adjacent to the surface thereof, said first, second and third drain regions electrically connected, a third step oxide formed from said substrate above said third drain region, said first, second and third step oxides, a tunneling element fabricated on the surface of said substrate over said second drain region between said second and third step oxides, a conductive floating gate fabricated on the surface of said gate oxide, said tunneling element, said second step oxide and at least portions of said first and third step oxides, an insulation layer fabricated over said floating gate, and a conductive control gate fabricated over said insulation layer, wherein said control gate is capacitively coupled to said floating gate.
Claim 9
Dependent Claim
237 words
A nonvolatile memory cell comprising: a semiconductor substrate, a source region formed in said substrate below and adjacent to the surface thereof, a first step oxide formed from said substrate above said source region. a first drain region formed in said substrate below and adjacent to the surface thereof, a second step oxide formed from said substrate above said first drain region, said second step oxide laterally offset from said first step oxide and defining a channel region therebetween, a gate oxide formed on the surface of said substrate between said first and second step oxides, a second drain region in said substrate at the surface thereof adjacent said second step oxide, a third drain region formed in said substrate below and adjacent to the surface thereof, said first, second and third drain regions electrically connected, a third step oxide formed from said substrate above said third drain region, said first, second and third step oxides, a tunneling element fabricated on the surface of said substrate over said second drain region between said second and third step oxides, a conductive floating gate fabricated on the surface of said gate oxide, said tunneling element, said second step oxide and at least portions of said first and third step oxides, an insulation layer fabricated over said floating gate, and a conductive control gate fabricated over said insulation layer, wherein said control gate is capacitively coupled to said floating gate.
Claim 10
Dependent Claim
32 words
A nonvolatile memory cell as recited in claim 7 wherein said tunneling element is a dielectric layer thinner than said gate oxide and said gate oxide is thinner than said step oxide.
Claim 11
Dependent Claim
23 words
A nonvolatile memory cell as recited in claim 7 wherein each of said step oxides extends to above the surface of said substrate.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |