US4600624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite insulator structure
Assignee: International Business Machines Corp
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Filing: 1983-09-20
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Granted: 1986-07-15
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Expires: 2003-09-20
Abstract
Abstract A composite insulator structure separating adjacent layers of patterned metal on an LSI chip is disclosed. The composite insulator consists of a relatively thick layer of sputtered oxide and a thin layer of plasma nitride. The relatively thin layer can be underneath, inside or on top of the thick layer. The relatively thin layer is conformal and able to cover projections on the underlying metal and prevent interlevel shorting between the patterned layers.
Inventors
- 👤 Robert R. Joseph
- 👤 Man-Chong Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/694; H10P14/6943; H10P14/69433; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10P14/6334; H10P14/6336; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24479; Y10T428/24521; Y10T428/24545; Y10T428/24942; Y10T428/2495
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
148 words
In a semiconductor device having at least two levels of metallization, wherein the top surface of the one of said levels of metallization which is closer to said device is characterized by a bulge caused by a contaminant or unwanted projection, a composite insulator deposited between said levels of metallization for reducing insulator failures between said levels of metallization, said composite insulator comprising: a first substantially conformal layer of dielectric material located over said one of said levels of metallization and covering said bulge, said dielectric material comprising plasma deposited SiOx, Si x N y of silicon oxynitride, a second layer of dielectric material on said first layer, said first layer being thinner than said second layer, and a third layer of dielectric material contiguous to and between said first layer and said one of said levels of metallization, said first layer being thinner than said third layer.
Claim 2
Dependent Claim
148 words
In a semiconductor device having at least two levels of metallization, wherein the top surface of the one of said levels of metallization which is closer to said device is characterized by a bulge caused by a contaminant or unwanted projection, a composite insulator deposited between said levels of metallization for reducing insulator failures between said levels of metallization, said composite insulator comprising: a first substantially conformal layer of dielectric material located over said one of said levels of metallization and covering said bulge, said dielectric material comprising plasma deposited SiOx, Si x N y of silicon oxynitride, a second layer of dielectric material on said first layer, said first layer being thinner than said second layer, and a third layer of dielectric material contiguous to and between said first layer and said one of said levels of metallization, said first layer being thinner than said third layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-14 | 1990-01-13 | 1990-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-14 | 1994-01-13 | 1994-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-14 | 1998-01-13 | 1998-07-15 | $7700.00 | Window Closed / Lapsed |