US4600686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a resist mask resistant to plasma etching
Assignee: US Philips Corp
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Filing: 1983-05-20
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Granted: 1986-07-15
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Expires: 2003-05-20
Abstract
Abstract A mask which is resistant to a plasma etching treatment is formed by providing an etch resistant skin over a lithographically patterned radiation sensitive resist film present on a substrate. The etch resistant skin is formed by providing a layer of, for example, chromium on the patterned resist and on the exposed surface of the substrate, and then, baking so that the chromium reacts chemically with the resist to form the etch resistant skin around the patterned film. This method may be used for example to manufacture a photo mask using a chromium coated glass substrate, or during the manufacture of semiconductor devices on a semiconductor wafer substrate.
Inventors
- 👤 Joseph Meyer
- 👤 David J. Vinton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/405
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
140 words
A method of forming a plasma resistant mask on a substrate comprising the steps of forming a layer of radiation sensitive resist on a substrate, lithographically patterning said layer to form a patterned radiation sensitive resist layer, providing a layer of coating material of chromium on said patterned layer and said substrate, effecting a heat treatment of said coating layer such that said coating layer in contact with said resist layer chemically reacts to form a plasma etch resistant skin on said patterned resist layer, and removing unreacted portions of said coating layer to form said patterned resist layer with a skin coating of said coating layer as said mask on said substrate, wherein said patterned resist layer is formed on a surface layer of said substrate, said surface layer including the same material as said layer of coating material.
Claim 2
Independent Claim
140 words
A method of forming a plasma resistant mask on a substrate comprising the steps of forming a layer of radiation sensitive resist on a substrate, lithographically patterning said layer to form a patterned radiation sensitive resist layer, providing a layer of coating material of chromium on said patterned layer and said substrate, effecting a heat treatment of said coating layer such that said coating layer in contact with said resist layer chemically reacts to form a plasma etch resistant skin on said patterned resist layer, and removing unreacted portions of said coating layer to form said patterned resist layer with a skin coating of said coating layer as said mask on said substrate, wherein said patterned resist layer is formed on a surface layer of said substrate, said surface layer including the same material as said layer of coating material.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said radiation sensitive resist is positive acting.
Claim 4
Dependent Claim
18 words
A method according to claim 1, wherein said radiation sensitive resist is a cross-linked positive acting co-polymer resist.
Claim 5
Dependent Claim
22 words
A method according to claim 3, wherein said radiation sensitive resist includes a mixture of poly-(methyl methacrylate-co-methacrylic acid) and poly-(methyl methacrylate-co-methacryloyl chloride).
Claim 6
Dependent Claim
20 words
A method according to claim 1, wherein said radiation sensitive resist layer has a thickness of less than 0.25 micrometers.
Claim 7
Dependent Claim
11 words
A method according to claim 1, wherein said substrate is quartz.
Claim 8
Dependent Claim
13 words
A method according to claim 1, wherein said substrate is a semiconductor material.
Claim 9
Dependent Claim
11 words
A method according to claim 1, wherein said substrate is glass.
Claim 10
Dependent Claim
22 words
A method according to claim 1, wherein said heat treatment includes heating to a temperature of about 130° C. for 30 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-14 | 1990-01-13 | 1990-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-14 | 1994-01-13 | 1994-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-14 | 1998-01-13 | 1998-07-15 | $7700.00 | Window Closed / Lapsed |