Patent US4606935A successfully refreshed from Google Patents.
US4606935A
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Process and apparatus for producing high purity oxidation on a semiconductor substrate
Assignee: International Business Machines Corp
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Filing: 1985-10-10
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Granted: 1986-08-19
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Expires: 2005-10-10
Abstract
Abstract High purity oxidation is produced on a semiconductor substrate. The process includes heating the semiconductor substrate in the presence of an oxidizing ambient in a multi-walled reaction chamber containing a heating element. A halogen-containing ambient flows in an outer portion of the reaction chamber intermediate between the inner portion and the heating element to react with heating element contaminant. In a portion of the reaction chamber position intermediate of the inner portion and the outer portion, a gaseous ambient flows to remove water by-product from the reaction with the halogen which occurs in the outer portion of the reaction chamber. The apparatus for carrying out the above process is also provided.
Inventors
- 👤 Samuel E. Blum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
139 words
A process for producing high-purity oxidation on a semiconductor substrate in a reaction chamber which comprises: heating a semiconductor substrate in the presence of an oxidizing ambient in a multi-walled reaction chamber containing heating element; wherein the semiconductor substrate is placed in the inner portion of the reaction chamber and an oxidizing ambient is caused to flow therein; wherein a halogen-containing ambient is caused to flow in an outer portion of said reaction chamber intermediate between said inner portion and said heating element; reacting said halogen-containing ambient with heating element contaminant coextensive with the surface of the reaction chamber; and causing a gaseous ambient to flow through a portion of said chamber positioned intermediate said inner portion and said outer portion, wherein said gaseous ambient removes water by-product of the reacting with the halogen occurring in the outer portion.
Claim 2
Dependent Claim
139 words
A process for producing high-purity oxidation on a semiconductor substrate in a reaction chamber which comprises: heating a semiconductor substrate in the presence of an oxidizing ambient in a multi-walled reaction chamber containing heating element; wherein the semiconductor substrate is placed in the inner portion of the reaction chamber and an oxidizing ambient is caused to flow therein; wherein a halogen-containing ambient is caused to flow in an outer portion of said reaction chamber intermediate between said inner portion and said heating element; reacting said halogen-containing ambient with heating element contaminant coextensive with the surface of the reaction chamber; and causing a gaseous ambient to flow through a portion of said chamber positioned intermediate said inner portion and said outer portion, wherein said gaseous ambient removes water by-product of the reacting with the halogen occurring in the outer portion.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the substrate is heated to a temperature of about 800° C. to about 1200° C.
Claim 4
Dependent Claim
21 words
The process of claim 1 wherein the substrate is heated to a temperature of about 900° C. to about 1100° C.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein the substrate is heated to a temperature of about 1000° C.
Claim 6
Dependent Claim
15 words
The process of claim 1 wherein a dry oxygen containing gas provides said oxidizing ambient.
Claim 7
Dependent Claim
12 words
The process of claim 4 wherein said oxygen containing gas is oxygen.
Claim 8
Dependent Claim
19 words
The process of claim 4 wherein said oxygen containing gas is a mixture of oxygen with a diluent gas.
Claim 9
Dependent Claim
10 words
The process of claim 6 wherein said mixture is air.
Claim 10
Dependent Claim
13 words
The process of claim 6 wherein said diluent gas is nitrogen or argon.
Claim 11
Dependent Claim
21 words
The process of claim 1 wherein said halogen containing ambient is at a temperature of about 800° C. to 1100° C.
Claim 12
Dependent Claim
18 words
The process of claim 1 wherein said halogen containing ambient is at a temperature of about 1000° C.
Claim 13
Dependent Claim
21 words
The process of claim 1 wherein said halogen containing ambient is a mixture of dry oxygen and a halogen containing gas.
Claim 14
Dependent Claim
16 words
The process of claim 11 wherein said halogen containing gas is HCl or a chlorinated hydrocarbon.
Claim 15
Dependent Claim
31 words
The process of claim 11 wherein the mixture contains about 90% to about 99% by volume of oxygen and about 1% to about 10% by volume of said halogen containing gas.
Claim 16
Dependent Claim
13 words
The process of claim 13 wherein said halogen containing gas is 1,1,1 trichloroethane.
Claim 17
Dependent Claim
10 words
The process of claim 1 wherein said substrate is silicon.
Claim 18
Dependent Claim
22 words
The process of claim 1 wherein said gaseous ambient is selected from the group of dry air, dry oxygen, and dry nitrogen.
Claim 19
Dependent Claim
12 words
The process of claim 1 wherein said gaseous ambient is dry oxygen.
Claim 20
Dependent Claim
12 words
The process of claim 1 wherein said gaseous ambient is dry nitrogen.
Claim 21
Dependent Claim
20 words
The process of claim 1 wherein said gaseous ambient is at a temperature of about 800° C. to 1100° C.
Claim 22
Dependent Claim
17 words
The process of claim 1 wherein said gaseous ambient is at a temperature of about 1000° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-18 | 1990-02-17 | 1990-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-18 | 1994-02-17 | 1994-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-18 | 1998-02-17 | 1998-08-19 | $7700.00 | Window Closed / Lapsed |