Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers

Claim 1

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film, said single-crystalline silicon semiconductor substrate having at least one impurity-doped region in its surface region; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and (d) forming at least on pn-junction in the single-crystallized portion of the semiconductor film.

Claim 2

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film, said single-crystalline silicon semiconductor substrate having at least one impurity-doped region in its surface region; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and (d) forming at least on pn-junction in the single-crystallized portion of the semiconductor film.

Claim 11

A method according to any one of claims 1, 2, 6 or 3, wherein said insulating film is made of a material selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 and phosphorous glass.

Claim 12

A method according to any one of claims 1, 2, 6, 3 or 7, wherein the thickness of said polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film is about 1000 Å to 1 μm.

Claim 19

A method of fabricating a semiconductor device, comprising: forming at least one impurity doped region in a surface region of a single crystalline silicon semiconductor substrate; coating the surface of the single-crystalline silicon semiconductor substrate at a portion thereof with an insulating film, leaving exposed a portion of the surface of the semiconductor substrate; coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

Claim 20

A method of fabricating a semiconductor device, comprising: forming at least one impurity doped region in a surface region of a single crystalline silicon semiconductor substrate; coating the surface of the single-crystalline silicon semiconductor substrate at a portion thereof with an insulating film, leaving exposed a portion of the surface of the semiconductor substrate; coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

Claim 25

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; the desired portion of the substrate having the insulating film formed thereon, in cross-section, having exposed substrate on both sides thereof; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered, the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film being coated to continuously cover the exposed substrate on one side of the insulating film and at least a first portion of the insulating film, and to continuously cover the exposed substrate on the other side of the insulating film and at least a second portion of the insulating film; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, at least a part of the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film on the exposed substrate on both sides and on at least desired portions of the insulating film being irradiated with a laser beam so that at least a portion of the irradiated film on the exposed substrate on both sides of the insulating film and on the insulating film is single crystallized, and so that the single crystallization of the polycrystalline or amorphous semiconductor film proceeds in a direction from both sides of the insulating film to the insulating film, and (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

Claim 26

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; the desired portion of the substrate having the insulating film formed thereon, in cross-section, having exposed substrate on both sides thereof; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered, the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film being coated to continuously cover the exposed substrate on one side of the insulating film and at least a first portion of the insulating film, and to continuously cover the exposed substrate on the other side of the insulating film and at least a second portion of the insulating film; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, at least a part of the polycrystalline silicon semiconductor film or amorphous silicon semiconductor film on the exposed substrate on both sides and on at least desired portions of the insulating film being irradiated with a laser beam so that at least a portion of the irradiated film on the exposed substrate on both sides of the insulating film and on the insulating film is single crystallized, and so that the single crystallization of the polycrystalline or amorphous semiconductor film proceeds in a direction from both sides of the insulating film to the insulating film, and (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film.

Claim 29

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film; (e) coating a portion of the surface of the single-crystallized portion of the semiconductor film with another insulating film; (f) coating the exposed surface of the single-crystallized portion and the another insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystallized portion and a desired portion of the another insulating film are continuously covered; (g) irradiating the polycrystalline or amorphous silicon film on the single-crystallized portion and on the desired portion of the another insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion of the another insulating film and the irradiated film on the exposed surface of the single-crystallized portion is single-crystallized, so as to form a second single-crystalline silicon semiconductor film continuously coating both the surface of the single-crystallized portion and the desired portion of the another insulating film; and (h) forming at least one pn-junction in the single-crystallized portion of the another semiconductor film, whereby dual-level single-crystalline semiconductor films are formed.

Claim 30

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film; (e) coating a portion of the surface of the single-crystallized portion of the semiconductor film with another insulating film; (f) coating the exposed surface of the single-crystallized portion and the another insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystallized portion and a desired portion of the another insulating film are continuously covered; (g) irradiating the polycrystalline or amorphous silicon film on the single-crystallized portion and on the desired portion of the another insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion of the another insulating film and the irradiated film on the exposed surface of the single-crystallized portion is single-crystallized, so as to form a second single-crystalline silicon semiconductor film continuously coating both the surface of the single-crystallized portion and the desired portion of the another insulating film; and (h) forming at least one pn-junction in the single-crystallized portion of the another semiconductor film, whereby dual-level single-crystalline semiconductor films are formed.

Claim 33

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film, said pn-junction being formed in the single-crystallized portion of the semiconductor film on said desired portion of the insulating film.

Claim 34

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously covered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; and (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film, said pn-junction being formed in the single-crystallized portion of the semiconductor film on said desired portion of the insulating film.

Claim 36

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline semiconductor substrate and a desired portion of the insulating film are continuously convered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, said irradiating being performed to melt the film on the exposed surface of the substrate and to single-crystallize the film on the exposed surface and to effect single-crystalline growth from the end portion of the single-crystallized film on the exposed surface of the substrate to single-crystallize said at least a portion of the irradiated film on said desired portion of the insulating film.

Claim 37

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline semiconductor substrate and a desired portion of the insulating film are continuously convered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate, said irradiating being performed to melt the film on the exposed surface of the substrate and to single-crystallize the film on the exposed surface and to effect single-crystalline growth from the end portion of the single-crystallized film on the exposed surface of the substrate to single-crystallize said at least a portion of the irradiated film on said desired portion of the insulating film.

Claim 40

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously convered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film; and (e) forming at least one semiconductor element having at least one region thereof in said single-crystallized portion of the semiconductor film.

Claim 41

A method of fabricating a semiconductor device, comprising: (a) coating a surface of a single-crystalline silicon semiconductor substrate at a desired portion with an insulating film; (b) coating said single crystalline silicon semiconductor substrate and said insulating film with either a polycrystalline silicon semiconductor film or an amorphous silicon semiconductor film such that at least a portion of the exposed surface of the single-crystalline silicon semiconductor substrate and a desired portion of the insulating film are continuously convered; (c) irradiating the polycrystalline silicon semiconductor film or said amorphous silicon semiconductor film on the exposed surface of the single-crystalline silicon semiconductor substrate and on the desired portion of the insulating film with a laser beam so that at least a portion of the irradiated film on said desired portion and the irradiated film on the exposed surface of the substrate is single-crystallized, so as to form a single-crystalline silicon semiconductor film continuously coating both the surface of said single-crystalline silicon semiconductor substrate and the desired portion of said insulating film, said single-crystalline silicon semiconductor substrate acting as a seed for the single-crystallizing of said at least a portion of the irradiated film on said desired portion and said irradiated film on the exposed surface of the single-crystalline silicon semiconductor substrate; (d) forming at least one pn-junction in the single-crystallized portion of the semiconductor film; and (e) forming at least one semiconductor element having at least one region thereof in said single-crystallized portion of the semiconductor film.