Patent US4643777A successfully refreshed from Google Patents.
US4643777A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device comprising resistors of high and low resistances
Assignee: Toshiba Corp
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Filing: 1984-12-19
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Granted: 1987-02-17
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Expires: 2004-12-19
Abstract
Abstract There is disclosed a method of manufacturing a semiconductor device comprising the steps of forming a polysilicon film on a semiconductor substrate through an oxidation film, forming a mask of a predetermined pattern on the polysilicon film, forming a molybdenum film on the polysilicon film, and silicifying those regions of said molybdenum film not covered by the mask so that a structure of the uncovered molybdenum film regions and those regions of the polysilicon film located under the uncovered molybdenum regions have low resistance, while a region of the molybdenum film covered by the mask has high resistance.
Inventors
- 👤 Takeo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:11
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; Y; Y10; Y10S; Y10S148/00; Y10S148/035; Y10S148/105; Y10S148/147
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising: a step of forming a film of a high resistance containing silicon on a semiconductor substrate; a step of forming a mask of a predetermined pattern on said silicon containing film; a step of forming a metal film on said silicon containing film; and a step of silicifying said metal film so that a structure of said metal film and that region of said silicon containing film which is adjacent to said metal film has a low resistance, while that region of said silicon containing film which is adjacent to said mask has a high resistance.
Claim 2
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising: a step of forming a film of a high resistance containing silicon on a semiconductor substrate; a step of forming a mask of a predetermined pattern on said silicon containing film; a step of forming a metal film on said silicon containing film; and a step of silicifying said metal film so that a structure of said metal film and that region of said silicon containing film which is adjacent to said metal film has a low resistance, while that region of said silicon containing film which is adjacent to said mask has a high resistance.
Claim 3
Dependent Claim
25 words
A manufacturing method according to claim 1, wherein said silicon containing film is formed over said substrate through an insulation film formed on said substrate.
Claim 4
Dependent Claim
27 words
A manufacturing method according to claim 1, which further comprises, following said mask forming step, a step of implanting an impurity ion into said silicon containing film.
Claim 5
Dependent Claim
32 words
A manufacturing method according to claim 1, which further comprises, following said metal film forming step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 6
Dependent Claim
30 words
A manufacturing method according to claim 1, which further comprises, following said silicifying step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 7
Dependent Claim
28 words
A manufacturing method according to claim 1, which further comprises, following said mask forming step, a step of thermally diffusing an impurity ion into said silicon containing film.
Claim 8
Dependent Claim
33 words
A manufacturing method according to claim 1, which further comprises, following said metal film forming step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 9
Dependent Claim
31 words
A manufacturing method according to claim 1, which further comprises, following said silicifying step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 10
Dependent Claim
16 words
A manufacturing method according to claim 1, wherein said silicon containing film is a polysilicon film.
Claim 11
Dependent Claim
17 words
A manufacturing method according to claim 1, wherein said silicon containing film is an amorphous silicon film.
Claim 12
Dependent Claim
18 words
A manufacturing method according to claim 1, wherein said silicon containing film is a single crystal silicon film.
Claim 13
Dependent Claim
26 words
A manufacturing method according to claim 1, wherein said metal film is made of one selected from molybdenum, titanium, tantalum, tungsten, platinum, palladium, cobalt and aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |