US4665010A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer
Assignee: International Business Machines Corp
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Filing: 1985-04-29
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Granted: 1987-05-12
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Expires: 2005-04-29
Abstract
Abstract A method for forming dielectric filled isolation trenches in a semiconductor substrate wherein the substrate is coated with a photopolymer layer which also fills the trenches. Depending on the type of radiation used, the photopolymer layer is masked except for the regions directly above the filled trenches. The structure is exposed to radiation through the mask, which is then removed. The unexposed portions of the photopolymer layer are washed away and heat is gradually applied to shrink the remaining photopolymer into the trenches until it becomes coplanar with the semiconductor substrate surface. A mask is used if the radiation is ultraviolet light, but no mask is required if electron beam or x-radiation is employed.
Inventors
- 👤 Harold H. Herd
- 👤 Lawrence Jacobowitz
- 👤 Jane M. Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/6539; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
126 words
A process for forming dielectric filled isolation trenches in the surface of a semiconductor substrate structure containing unfilled trenches comprising the steps of: coating said surface of said semiconductor substrate with photopolymer material such that said photopolymer coating material also fills said trenches, exposing said semiconductor structure with radiation to photo expose said photopolymer coated regions above said trenches and leaving the remainder of said photopolymer coating on said surface of said semiconductor substrate unexposed, washing away unexposed regions of said photopolymer coating leaving said exposed photopolymer regions above said trenches, and applying heat to said semiconductor substrate structure to cause said exposed photopolymer material on said trenches to shrink until said photopolymer material in said trenches is coplanar with said surface of said semiconductor substrate.
Claim 2
Dependent Claim
126 words
A process for forming dielectric filled isolation trenches in the surface of a semiconductor substrate structure containing unfilled trenches comprising the steps of: coating said surface of said semiconductor substrate with photopolymer material such that said photopolymer coating material also fills said trenches, exposing said semiconductor structure with radiation to photo expose said photopolymer coated regions above said trenches and leaving the remainder of said photopolymer coating on said surface of said semiconductor substrate unexposed, washing away unexposed regions of said photopolymer coating leaving said exposed photopolymer regions above said trenches, and applying heat to said semiconductor substrate structure to cause said exposed photopolymer material on said trenches to shrink until said photopolymer material in said trenches is coplanar with said surface of said semiconductor substrate.
Claim 3
Dependent Claim
15 words
A method according to claim 1 wherein said photopolymer material is a photopolymerizable siloxane-based compound.
Claim 4
Dependent Claim
20 words
A method according to claim 1 wherein said photopolymer material is a silicic compound containing 70% to 80% silicon dioxide.
Claim 5
Dependent Claim
17 words
A method according to claim 1 wherein said radiation in said exposing step is electron beam radiation.
Claim 6
Dependent Claim
21 words
A method according to claim 1 wherein said radiation used in said exposing step is radiation in the x-ray frequency spectrum.
Claim 7
Dependent Claim
65 words
A method according to claim 1 further including, prior to said exposing step, the step of masking said coated semiconductor substrate surface with a light opaque mask having openings therein above said trench regions, and the step of removing said mask after said exposing step and washing away unexposed regions of said photopolymer coating, and wherein said radiation in said exposing step is ultraviolet radiation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-11 | 1990-11-10 | 1991-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-11 | 1994-11-10 | 1995-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-11 | 1998-11-10 | 1999-05-12 | $7700.00 | Window Closed / Lapsed |