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US4678731A Expired / Lapsed US ⏱️ 0.0 years remaining

Electrophotographic photosensitive member having barrier layer comprising microcrystalline silicon containing hydrogen

Assignee: Toshiba Corp
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Filing: 1986-06-23
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Granted: 1987-07-07
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Expires: 2006-06-23
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Abstract

Abstract In an electrophotographic photosensitive member according to the present invention, a barrier layer is formed on a conductive substrate, and a photoconductive layer on the barrier layer. Formed of microcrystalline silicon, the photoconductive layer is highly sensitive to long-wavelength light. The barrier layer is formed of microcrystalline silicon containing an element included in group III or V of the periodic table. The rectifying action of the barrier layer prevents carriers from being injected into the photoconductive layer from the substrate side. Containing carbon, oxygen, or nitrogen, the barrier layer has high dark resistance and chargeability.

Inventors

  • 👤 Shuji Yoshizawa
  • 👤 Wataru Mitani
  • 👤 Mariko Yamamoto
  • 👤 Akira Sanjoh
  • 👤 Tatsuya Ikezue

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 22:11
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228; G03G5/08235; G03G5/08242; Y; Y10; Y10S; Y10S430/00; Y10S430/146

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 74 words
An electrophotographic photosensitive member comprising: a conductive substrate; a barrier layer provided on the conductive substrate, at least part of said barrier layer being formed of microcrystalline silicon containing hydrogen, an element included in group III or V of the periodic table, and at least one element selected from carbon, oxygen, and nitrogen; and a photosensitive layer provided on the barrier layer, at least part of said photosensitive layer being formed of microcrystalline silicon.
Claim 2
Dependent Claim 74 words
An electrophotographic photosensitive member comprising: a conductive substrate; a barrier layer provided on the conductive substrate, at least part of said barrier layer being formed of microcrystalline silicon containing hydrogen, an element included in group III or V of the periodic table, and at least one element selected from carbon, oxygen, and nitrogen; and a photosensitive layer provided on the barrier layer, at least part of said photosensitive layer being formed of microcrystalline silicon.
Claim 3
Dependent Claim 16 words
The electrophotographic photosensitive member according to claim 1, wherein said photosensitive layer is a photoconductive layer.
Claim 4
Dependent Claim 31 words
The electrophotographic photosensitive member according to claim 2, wherein said photoconductive layer contains 10 -7 to 10 -3 atomic percent of an element included in group III of the periodic table.
Claim 5
Dependent Claim 22 words
The electrophotographic photosensitive member according to claim 1, wherein said photoconductive layer includes microcrystalline silicon regions and amorphous silicon regions, distributed mixedly.
Claim 6
Dependent Claim 25 words
The electrophotographic photosensitive member according to claim 1, wherein said photoconductive layer includes a microcrystalline silicon layer and an amorphous silicon layer, stacked for lamination.
Claim 7
Dependent Claim 23 words
The electrophotographic photosensitive member according to claim 1, wherein the hydrogen content of said barrier layer ranges from 0.1 to 30 atomic percent.
Claim 8
Dependent Claim 27 words
The electrophotographic photosensitive member according to claim 1, wherein the group-III or -V element content of said barrier layer ranges from 10 -3 to 10 atomic percent.
Claim 9
Dependent Claim 36 words
The electrophotographic photosensitive member according to claim 1, wherein the content of each of the at least one element selected from carbon, oxygen, and nitrogen of said barrier layer ranges from 0.1 to 20 atomic percent.
Claim 10
Dependent Claim 21 words
The electrophotographic photosensitive member according to claim 2, wherein the thickness of said photoconductive layer ranges from 3 to 80 μm.
Claim 11
Dependent Claim 21 words
The electrophotographic photosensitive member according to claim 1, wherein the thickness of said barrier layer ranges from 0.01 to 10 μm.
Claim 12
Dependent Claim 21 words
The electrophotographic photosensitive member according to claim 1, further comprising a surface layer of amorphous silicon formed on said photoconductive layer.
Claim 13
Dependent Claim 23 words
The electrophotographic photosensitive member according to claim 11, wherein said surface layer contains at least one element selected from carbon, oxygen, and nitrogen.
Claim 14
Dependent Claim 36 words
The electrophotographic photosensitive member according to claim 12, wherein the content of the at least one element selected from carbon, oxygen, and nitrogen, of said surface layer, ranges from 10 to 50 percent by atomic weight.
Claim 15
Dependent Claim 34 words
The electrophotographic photosensitive member according to claim 2, wherein that region of said photoconductive layer on the surface side of the photosensitive member contains at least one element selected from carbon, oxygen, and nitrogen.
Claim 16
Dependent Claim 35 words
The electrophotographic photosensitive member according to claim 14, wherein the element or elements contained in said surface-side region of the photoconductive layer are reduced in density with distance from the surface of the photosensitive member.
Claim 17
Dependent Claim 35 words
The electrophotographic photosensitive member according to claim 14, wherein the at least one element selected from carbon, oxygen, and nitrogen, contained in said barrier layer is reduced in density with distance from the conductive substrate.
Claim 18
Dependent Claim 42 words
The electrophotographic photosensitive member according to claim 1, wherein said photosensitive layer includes a charge-transport layer formed on the conductive substrate, and a charge-generating layer provided on the charge-transport layer, at least part of said charge-generating layer being formed of microcrystalline silicon.
Claim 19
Dependent Claim 33 words
The electrophotographic photosensitive member according to claim 17, wherein the thickness of said charge-generating layer is 5 μm or less, and the thickness of said charge-transport layer ranges from 3 to 80 μm.

References Cited (Backward Citations)

US4490453A Cited
DE3215151A1 Cited
EP0066812A3 Cited
US4560634A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-07-06 1991-01-05 1991-07-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-07-06 1995-01-05 1995-07-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-07-06 1999-01-05 1999-07-07 $7700.00 Window Closed / Lapsed

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