Patent US4699689A successfully refreshed from Google Patents.
US4699689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for dry processing of substrates
Assignee: Ulvac Inc
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Filing: 1986-01-31
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Granted: 1987-10-13
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Expires: 2006-01-31
Abstract
Abstract A method is provided for removing photoresist from a substrate, wherein the method comprises producing a gas plasma from a gas mixture comprising oxygen, CF 4 , nitrogen, and hydrogen; substantially eliminating any electrically charged particles from the plasma to produce a plasma effluent; heating the substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; exposing the substrate and photoresist thereon to the effluent while said temperature is maintained; and simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Inventors
- 👤 Richard L. Bersin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:02
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32009; H01J37/32321; H01J37/32339; H01J37/32357; H01J37/32422; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
103 words
A method for removing photoresist from the surface of a substrate, the method comprising: (a) producing a gas plasma from a gas mixture comprising oxygen, CF 4 , nitrogen, and hydrogen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; (d) exposing said substrate and the photoresist thereon to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Claim 2
Independent Claim
103 words
A method for removing photoresist from the surface of a substrate, the method comprising: (a) producing a gas plasma from a gas mixture comprising oxygen, CF 4 , nitrogen, and hydrogen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; (d) exposing said substrate and the photoresist thereon to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Claim 3
Dependent Claim
31 words
The method of claim 1, wherein said heating step comprises irradiating the substrate with infrared radiation while said substrate is supported in relative thermal isolation on a plurality of quartz supports.
Claim 4
Independent Claim
95 words
A method for removing photoresist from the surface of a substrate, the method comprising: (a) producing a gas plasma from a gas mixture comprising oxygen, nitrogen, and hydrogen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature greater than about 275 degrees Centrigrade; (d) exposing said substrate and the photoresist thereon to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Claim 5
Independent Claim
95 words
A method for removing photoresist from the surface of a substrate, the method comprising: (a) producing a gas plasma from a gas mixture comprising oxygen, nitrogen, and hydrogen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature greater than about 275 degrees Centrigrade; (d) exposing said substrate and the photoresist thereon to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Claim 6
Independent Claim
84 words
A method for etching a substrate, the method comprising: (a) producing a gas plasma from a gas comprising CF 4 and oxygen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature of approximately 200 degrees Centigrade; (d) exposing said substrate to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
Claim 7
Independent Claim
84 words
A method for etching a substrate, the method comprising: (a) producing a gas plasma from a gas comprising CF 4 and oxygen in a region relatively remote from said substrate; (b) substantially eliminating any electrically charged particles from said plasma to produce a plasma effluent; (c) heating said substrate to a temperature of approximately 200 degrees Centigrade; (d) exposing said substrate to said plasma effluent while said temperature is maintained; and (e) simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-12 | 1991-04-13 | 1991-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-12 | 1995-04-13 | 1995-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-12 | 1999-04-13 | 1999-10-13 | $7700.00 | Window Closed / Lapsed |