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US4710476A Expired / Lapsed US ⏱️ 0.0 years remaining

Surface-derivatized semiconductors with chemically sensitive luminescence

Assignee: 3M Co
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Filing: 1985-12-20
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Granted: 1987-12-01
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Expires: 2005-12-20
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Abstract

Abstract The presence of certain chemicals on the emitting surface of the surface-derivatized photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

Inventors

  • 👤 Arthur B. Ellis
  • 👤 Hal van Ryswyk

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 21:26
CPC Classifications
G; G01; G01N; G01N21/00; G01N21/62; G01N21/63; G01N21/64; G01N21/6428; G01N21/643; G01N2021/6439

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 123 words
An apparatus for detecting the presence of chemical compounds comprising: (1) a photoluminescent semiconductor having on a radiation emitting surface thereof a reacted material bonded to said radiation emitting surface of said semiconductor, said reacted material being capable of undergoing a redox reaction with an oxidizing or reducing compound to produce a redox product bonded to said radiation emitting surface, which reacted material has an ionic charge distribution which is vertical with respect to the radiation emitting surface, said charge distribution being capable of altering an electric field in said semiconductor, (2) a source of actinic radiation which impinges on said radiation emitting surface of said semiconductor, and (3) a means for detecting changes in the radiation emitted from said radiation emitting surface.
Claim 2
Independent Claim 123 words
An apparatus for detecting the presence of chemical compounds comprising: (1) a photoluminescent semiconductor having on a radiation emitting surface thereof a reacted material bonded to said radiation emitting surface of said semiconductor, said reacted material being capable of undergoing a redox reaction with an oxidizing or reducing compound to produce a redox product bonded to said radiation emitting surface, which reacted material has an ionic charge distribution which is vertical with respect to the radiation emitting surface, said charge distribution being capable of altering an electric field in said semiconductor, (2) a source of actinic radiation which impinges on said radiation emitting surface of said semiconductor, and (3) a means for detecting changes in the radiation emitted from said radiation emitting surface.
Claim 3
Dependent Claim 13 words
The apparatus of claim 1 wherein said source of radiation comprises visible light.
Claim 4
Dependent Claim 73 words
The apparatus of claim 1 wherein said semiconductor comprises a solid state solution of at least two elements selected from the group consisting of (a) cadmium, selenium and sulfur, (b) zinc, selenium and sulfur, (c) cadmium, zinc and selenium, (d) cadmium, zinc and sulfur, (e) cadmium and selenium, (f) cadmium and sulfur, (g) zinc and selenium doped with aluminum, (h) gallium and arsenic, (i) gallium, arsenic and phosphorus, and (j) gallium and phosphorus.
Claim 5
Dependent Claim 20 words
The apparatus of claim 3 wherein said means for detecting changes in the characteristics of the radiation is a radiometer.
Claim 6
Dependent Claim 13 words
The apparatus of claim 3 wherein said reacted material comprises a ferrocene compound.
Claim 7
Dependent Claim 20 words
The apparatus of claim 1 wherein said means for detecting changes in the characteristics of the radiation is a radiometer.
Claim 8
Dependent Claim 13 words
The apparatus of claim 6 wherein said source of radiation comprises visible light.
Claim 9
Dependent Claim 13 words
The apparatus of claim 6 wherein said reacted material comprises a ferrocene compound.
Claim 10
Dependent Claim 13 words
The apparatus of claim 8 wherein said source of radiation comprises visible light.
Claim 11
Dependent Claim 132 words
The process for detecting the presence of chemical components comprising providing a photoluminescent semiconductor having on at least one radiation emitting surface a reacted material bonded to said radiation emitting surface, said reacted material being capable of undergoing a redox reaction with an oxidizing or reducing compound to produce a redox product bonded to said radiation emitting surface, which reacted material has an ionic charge distribution which is vertical with respect to the radiation emitting surface, said charge distribution being capable of altering an electric field in said semiconductor, irradiating said surface with actinic radiation, observing the radiation emitted from said surface, then exposing said surface to an environment having chemical compounds capable of oxidizing or reducing said reacted material therein and detecting any changes in the radiation emitted from said surface.
Claim 12
Dependent Claim 132 words
The process for detecting the presence of chemical components comprising providing a photoluminescent semiconductor having on at least one radiation emitting surface a reacted material bonded to said radiation emitting surface, said reacted material being capable of undergoing a redox reaction with an oxidizing or reducing compound to produce a redox product bonded to said radiation emitting surface, which reacted material has an ionic charge distribution which is vertical with respect to the radiation emitting surface, said charge distribution being capable of altering an electric field in said semiconductor, irradiating said surface with actinic radiation, observing the radiation emitted from said surface, then exposing said surface to an environment having chemical compounds capable of oxidizing or reducing said reacted material therein and detecting any changes in the radiation emitted from said surface.
Claim 13
Dependent Claim 12 words
The process of claim 10 wherein said actinic radiation is visible light.
Claim 14
Dependent Claim 20 words
The process of claim 10 wherein light from a light bulb, laser, or light emitting diode provides said actinic radiation.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1990-11-30 1991-06-01 1991-12-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1994-11-30 1995-06-01 1995-12-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1998-11-30 1999-06-01 1999-12-01 $7700.00 Window Closed / Lapsed

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