Patent US4722762A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4722762A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making shaped bodies of silicon carbide or of graphite or graphite-like material with a silicon carbide surface

Assignee: Forschungszentrum Jülich
•
Filing: 1983-11-16
•
Granted: 1988-02-02
•
Expires: 2003-11-16
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method of making shaped bodies of silicon carbide, of graphite coated with silicon carbide or of a graphite-like material with a silicon carbide surface wherein a graphitic body is assembled from preformed parts in the desired shape and is immersed, under a chemically inert atmosphere, in a silicon melt and after penetration of the melt into gaps between abutting surfaces of the body and after reaction of the silicon with the graphite or the graphite-like material to form silicon carbide at the junctions, the body is removed from the melt and is cooled in a chemically inert atmosphere.

Inventors

  • 👤 Hartmut Luhleich
  • 👤 Francisco Dias
  • 👤 Ashok K. Gupta
  • 👤 Erno Gyarmati
  • 👤 Marian Kampel
  • 👤 Rudolf Munzer
  • 👤 Aristides Naoumidis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 19:15
CPC Classifications
C; C04; C04B; C04B37/00; C04B37/001; C04B35/00; C04B35/515; C04B35/56; C04B35/565; C04B35/573; C04B37/003; C04B37/005; F; F28; F28F; F28F21/00; F28F21/02; C04B2237/00; C04B2237/02; C04B2237/04; C04B2237/08; C04B2237/083; C04B2237/16; C04B2237/30; C04B2237/32; C04B2237/36; C04B2237/363; C04B2237/365; C04B2237/50; C04B2237/60; C04B2237/61; C04B2237/76; C04B2237/80; C04B2237/86; Y; Y10; Y10T; Y10T428/00; Y10T428/30; Y10T428/31504; Y10T428/31536

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 163 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; and (d) cooling the assembly removed from the liquid silicon under an inert atmosphere.
Claim 2
Independent Claim 163 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; and (d) cooling the assembly removed from the liquid silicon under an inert atmosphere.
Claim 3
Independent Claim 205 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, and parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said graphite parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and (e) removing excess silicon from said assembly prior to the cooling thereof by heating said assembly following step (c) to a temperature of at most 2000° C. and sufficient to vaporize adherent adherent elemental silicon in vacuum or in an inert atmosphere.
Claim 4
Independent Claim 205 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, and parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable penetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said graphite parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and (e) removing excess silicon from said assembly prior to the cooling thereof by heating said assembly following step (c) to a temperature of at most 2000° C. and sufficient to vaporize adherent adherent elemental silicon in vacuum or in an inert atmosphere.
Claim 5
Independent Claim 187 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable pernetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and (e) eliminating excess silicon adherent to said assembly by immersing said assembly following step (d) in a solution in which elemental silicon is soluble.
Claim 6
Independent Claim 187 words
A method of producing a silicon carbide body having homogeneously interconnected parts, comprising the steps of: (a) forming an assembly of shaped carbon parts such that junctions are formed between abutting surfaces of said parts, said parts having a density of 0.6 to 1.3 g/cm 3 , a porosity of 30 to 70% and an air permeability of 1 to 8 cm 3 /min.; (b) immersing said assembly in liquid silicon under a chemically inert atmosphere for a period sufficient at least to enable pernetration of liquid silicon into each of said parts throughout the thickness thereof and into said junction and for a period sufficient at least to enable reaction between the penetrating silicon and the carbon of said carbon parts to form a homogeneous silicon carbide structure at each of said junctions and through said parts; (c) removing said assembly following step (b) from said liquid silicon; (d) cooling the assembly removed from the liquid silicon under an inert atmosphere; and (e) eliminating excess silicon adherent to said assembly by immersing said assembly following step (d) in a solution in which elemental silicon is soluble.
Claim 7
Dependent Claim 24 words
The method defined in claim 1, claim 2 or claim 3 wherein said parts have a density of 0.8 to 1.2 c/cm 3 .
Claim 8
Dependent Claim 55 words
The method defined in claims 1, 2 or claim 3 wherein said parts are formed by the steps of: (a 1 ) coating carbonaceous particles with a binder; (a 2 ) shaping the binder-coated carbonaceous particles to the shape of one of said carbon parts; and (a 3 ) coking the shaped particles and binder.

References Cited (Backward Citations)

GB841716A Cited
US3019128A Cited
US2979814A Cited
US3367812A Cited
US3874958A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-02-01 1991-08-03 1992-02-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-02-01 1995-08-03 1996-02-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-02-01 1999-08-03 2000-02-02 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag