US4738933A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic PIN diode and method for its manufacture
Assignee: Fei Microwave Inc
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Filing: 1985-08-27
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Granted: 1988-04-19
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Expires: 2005-08-27
Abstract
Abstract A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.
Inventors
- 👤 John G. Richards
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:57
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/50; H10D8/422; H10D84/00; H10D84/201; H10D84/204; H10D84/221
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
161 words
A method of fabricating a monolithic PIN diode in a wafer of semiconductor material having a substrate that forms a first a majority charge region and an overlying layer that forms an I region, the method comprising the steps of: removing the overlying layer from the substrate around each of two predefined areas whereby the remaining overlying layer forms first and second I region mesas on the substrate, each mesa having an upper surface; forming a second majority charge region in the upper portion of the second mesa, the second majority charge region being of opposite polarity to the first majority charge region, and separated from the first majority charge region by the intervening I region of the second mesa; applying insulation to the exposed surfaces of the mesas and the substrate, the insulation having a first opening located between the mesas for access to the substrate, and a second opening for access to the upper surface of the second mesa;
Claim 2
Independent Claim
161 words
A method of fabricating a monolithic PIN diode in a wafer of semiconductor material having a substrate that forms a first a majority charge region and an overlying layer that forms an I region, the method comprising the steps of: removing the overlying layer from the substrate around each of two predefined areas whereby the remaining overlying layer forms first and second I region mesas on the substrate, each mesa having an upper surface; forming a second majority charge region in the upper portion of the second mesa, the second majority charge region being of opposite polarity to the first majority charge region, and separated from the first majority charge region by the intervening I region of the second mesa; applying insulation to the exposed surfaces of the mesas and the substrate, the insulation having a first opening located between the mesas for access to the substrate, and a second opening for access to the upper surface of the second mesa;
Claim 3
Dependent Claim
64 words
forming contact layers on the first and second mesas, the contact layer on the second mesa making electrical contact with the second majority charge region; and providing a conductive path between the first opening and the contact atop the first mesa, the conductive path connecting the contact to the substrate, but being isolated by the insulation from the I region in the first mesa.
Claim 4
Dependent Claim
64 words
forming contact layers on the first and second mesas, the contact layer on the second mesa making electrical contact with the second majority charge region; and providing a conductive path between the first opening and the contact atop the first mesa, the conductive path connecting the contact to the substrate, but being isolated by the insulation from the I region in the first mesa.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |