US4755864A
Expired / Lapsed
US
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Semiconductor read only memory device with selectively present mask layer
Assignee: Toshiba Corp
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Filing: 1987-09-14
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Granted: 1988-07-05
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Expires: 2007-09-14
Abstract
Abstract A semiconductor read only memory device is disclosed, which comprises a plurality of memory cells each including drain and source regions separately formed on a semiconductor substrate of p-conductivity type and a gate electrode insulatively disposed over the semiconductor substrate and extending between the drain and source regions. A poly-silicon layer containing an impurity of the p-conductivity type is formed such that it is contiguous to each drain region. A silicon nitride mask having electric insulation property and antioxidation property is formed selectively on the poly-silicon layer. The poly-silicon layer is oxidized selectively except for portions contiguous to the drain regions in the presence of the silicon nitride masks. An aluminum layer is selectively made in contact with the poly-silicon layer depending on the presence or absence of the silicon nitride layer.
Inventors
- 👤 Shoji Ariizumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:35
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/34; H10P; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A semiconductor read only memory device comprising: a plurality of memory cells each including a pair of semiconductor regions separately formed on a semiconductor substrate of a first conductivity type, said semiconductor regions having a second conductivity type opposite to said first conductivity type, and a gate electrode insulatively disposed over said semiconductor substrate and extending between said pair of semiconductor regions; a first conductive layer contiguous to one of said semiconductor regions of each of said memory cells, and containing an impurity of said second conductivity type; a mask layer formed over said first conductive layer and having an electric insulation property and an anti-oxidation property, said mask layer being selectively removed according to write information; and a second conductive layer formed on the surface of said first conductive layer inclusive of said mask layer and selectively contiguous to said first conductive layer depending on the presence or absence of said mask layer.
Claim 2
Dependent Claim
154 words
A semiconductor read only memory device comprising: a plurality of memory cells each including a pair of semiconductor regions separately formed on a semiconductor substrate of a first conductivity type, said semiconductor regions having a second conductivity type opposite to said first conductivity type, and a gate electrode insulatively disposed over said semiconductor substrate and extending between said pair of semiconductor regions; a first conductive layer contiguous to one of said semiconductor regions of each of said memory cells, and containing an impurity of said second conductivity type; a mask layer formed over said first conductive layer and having an electric insulation property and an anti-oxidation property, said mask layer being selectively removed according to write information; and a second conductive layer formed on the surface of said first conductive layer inclusive of said mask layer and selectively contiguous to said first conductive layer depending on the presence or absence of said mask layer.
Claim 3
Dependent Claim
21 words
The semiconductor read only memory device according to claim 1, wherein said first conductive layer is made of a poly-silicon layer.
Claim 4
Dependent Claim
19 words
The semiconductor read only memory device according to claim 1, wherein said mask layer is made of silicon nitride.
Claim 5
Dependent Claim
159 words
A semiconductor read only memory device comprising: a plurality of memory cells each including a pair of semiconductor regions separately formed on a semicondcutor substrate type, and a gate electrode insulatively disposed over said semiconductor substrate and extending between said pair of semiconductor regions; a plurality of first conductive layers, each insulatively formed over said gate electrode and contiguous to one of said pair of semiconductor regions of each of said memory cells, and each containing an impurity of said second conductivity type; a plurality of mask layers, formed over said plurality of first conductive layers and having an electric insulation property and an anti-oxidation property, said mask layers bieng selectively removed according to write information; and a plurality of second conductive layers formed on the surface of said plurality of first conductive layers inclusive of said plurality of mask layers and selectively contiguous to said first conductive layers depending on the presence or absence of said mask layers.
Claim 6
Dependent Claim
159 words
A semiconductor read only memory device comprising: a plurality of memory cells each including a pair of semiconductor regions separately formed on a semicondcutor substrate type, and a gate electrode insulatively disposed over said semiconductor substrate and extending between said pair of semiconductor regions; a plurality of first conductive layers, each insulatively formed over said gate electrode and contiguous to one of said pair of semiconductor regions of each of said memory cells, and each containing an impurity of said second conductivity type; a plurality of mask layers, formed over said plurality of first conductive layers and having an electric insulation property and an anti-oxidation property, said mask layers bieng selectively removed according to write information; and a plurality of second conductive layers formed on the surface of said plurality of first conductive layers inclusive of said plurality of mask layers and selectively contiguous to said first conductive layers depending on the presence or absence of said mask layers.
Claim 7
Dependent Claim
23 words
The semiconductor read only memory device according to claim 1, wherein each of said first conductive layers is made of a poly-silicon layer.
Claim 8
Dependent Claim
21 words
The semiconductor read only memory device according to claim 1, wherein each of said mask layers is made of silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |