US4772520A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermal head and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1987-03-04
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Granted: 1988-09-20
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Expires: 2007-03-04
Abstract
Abstract This invention discloses a thermal head having a resistive layer of a thin Ta-Si-O film containing more than 45 mol % and at most 75 mol % of a silicon oxide in terms of SiO 2 , and a method of manufacturing a thermal head by sputtering a sintered target in vacuum atmosphere at an argon gas partial pressure of 10×10 -3 Torr to 80×10 -3 Torr so as to obtain the resistive layer.
Inventors
- 👤 Shouzo Takeno
- 👤 Hideki Matsui
- 👤 Kazushige Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:51
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/315; B41J2/32; B41J2/335; B41J2/33505; B41J2/33515; B41J2/3355; B41J2/33555; B41J2/3357; B41J2/3359; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
52 words
A thermal head, comprising: a thin Ta-Si-O film as an electrically resistive layer, for generating heat to print on heat-sensitive paper, wherein said resistive layer contains more than 53 mol% and at most 75 mol% of silicon oxide in terms of SiO 2 ; and a protective layer covering said resistive layer.
Claim 2
Dependent Claim
52 words
A thermal head, comprising: a thin Ta-Si-O film as an electrically resistive layer, for generating heat to print on heat-sensitive paper, wherein said resistive layer contains more than 53 mol% and at most 75 mol% of silicon oxide in terms of SiO 2 ; and a protective layer covering said resistive layer.
Claim 3
Dependent Claim
30 words
A thermal head according to claim 1, wherein said resistive layer contains more than 59 mol% and at most 62 mol% of silicon oxide in terms of SiO 2 .
Claim 4
Independent Claim
94 words
A method of manufacturing a thermal head, comprising the steps of: mixing tantalum and SiO 2 and sintering a mixture thereof to prepare a sintered target, such that the silicon oxide content, in terms of SiO 2 contained in said sintered target, is more than 53 mol%, and 75 mol% at most; sputtering said sintered target in a vacuum atmosphere at an argon gas partial pressure of 10×10 -3 Torr to 80×10 -3 Torr to prepare an electrically resistive layer of a thin Ta-Si-O film; and depositing a protective layer on said resistive layer.
Claim 5
Independent Claim
94 words
A method of manufacturing a thermal head, comprising the steps of: mixing tantalum and SiO 2 and sintering a mixture thereof to prepare a sintered target, such that the silicon oxide content, in terms of SiO 2 contained in said sintered target, is more than 53 mol%, and 75 mol% at most; sputtering said sintered target in a vacuum atmosphere at an argon gas partial pressure of 10×10 -3 Torr to 80×10 -3 Torr to prepare an electrically resistive layer of a thin Ta-Si-O film; and depositing a protective layer on said resistive layer.
Claim 6
Dependent Claim
20 words
A method according to claim 3, wherein the argon gas partial pressure is 25×10 -3 Torr to 50×10 -3 Torr.
Claim 7
Dependent Claim
68 words
A thermal head comprising: a thin Ta-Si-O film as an electrically resistive layer, for generating heat to print on heat sensitive paper, wherein said resistive layer contains more than 53 mol% and at most 75 mol% of silicon oxide in terms of SiO 2 so that the power supplied to each resistive layer is (0.1 (V 2 /R))/dot or less; and a protective layer covering said resistive layer.
Claim 8
Dependent Claim
68 words
A thermal head comprising: a thin Ta-Si-O film as an electrically resistive layer, for generating heat to print on heat sensitive paper, wherein said resistive layer contains more than 53 mol% and at most 75 mol% of silicon oxide in terms of SiO 2 so that the power supplied to each resistive layer is (0.1 (V 2 /R))/dot or less; and a protective layer covering said resistive layer.
Claim 9
Dependent Claim
29 words
A method according to claim 3, wherein said sintered target contains more than 59 mol% and at most 62 mol% of silicon oxide in terms of SiO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |