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US4776918A Expired / Lapsed US ⏱️ 0.0 years remaining

Plasma processing apparatus

Assignee: Renesas Technology Corp
•
Filing: 1987-10-20
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Granted: 1988-10-11
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Expires: 2007-10-20
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Abstract

Abstract Microwaves supplied from a magnetron through a waveguide are resonated in a cavity resonator to increase their amplitude. The resonated microwaves are emitted into a plasma production chamber through slits and a wall. Then plasma is produced in the plasma production chamber into which plasma processing gas is introduced. The plasma is employed for uniformly processing a substrate.

Inventors

  • 👤 Toru Otsubo
  • 👤 Yasuhiro Yamaguchi
  • 👤 Takahiko Takeuchi, deceased

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:52
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32238; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H01J37/32247

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 103 words
A plasma processing apparatus comprising: a microwave generation source; a waveguide for supplying the microwaves from the microwave generation source; a cavity resonator for resonating the microwaves supplied from the waveguide to increase the amplitude thereof; a slit means having at least one slit provided on a wall of the cavity resonator which can transmit the microwaves; and a plasma producing chamber in which plasma is produced by the microwaves introduced through the at least one slit and the wall separating the plasma producing chamber from said cavity resonator and by externally introduced processing gas, and a substrate is processed by the plasma.
Claim 2
Dependent Claim 103 words
A plasma processing apparatus comprising: a microwave generation source; a waveguide for supplying the microwaves from the microwave generation source; a cavity resonator for resonating the microwaves supplied from the waveguide to increase the amplitude thereof; a slit means having at least one slit provided on a wall of the cavity resonator which can transmit the microwaves; and a plasma producing chamber in which plasma is produced by the microwaves introduced through the at least one slit and the wall separating the plasma producing chamber from said cavity resonator and by externally introduced processing gas, and a substrate is processed by the plasma.
Claim 3
Dependent Claim 46 words
A plasma processing apparatus according to claim 1, wherein said cavity resonator is formed in the shape of a cylinder and said slit means is provided in form of slit plate on the bottom face so as to be one wall of the plasma producting chamber.
Claim 4
Dependent Claim 27 words
A plasma processing apparatus according to claim 1, wherein said plasma producing chamber is provided with means for generating a magnetic field for increasing the plasma density.
Claim 5
Dependent Claim 32 words
A plasma processing apparatus according to claim 1, wherein said plasma producing chamber is, in its interior, provided with a grid plate facing the substrate for shielding the ions in the plasma.
Claim 6
Dependent Claim 61 words
A plasma processing apparatus according to claim 1, wherein electrodes opposite to each other are arranged on the upper and lower sides in said plasma producting chamber, said cavity resonator is a ringshaped resonator provided around the ring side wall of the plasma producing chamber and said slit means is a ring-shaped slit attached to the side wall inside the resonator.
Claim 7
Dependent Claim 20 words
A plasma processing apparatus according to claim 1, wherein said wall is made of a ceramic-substrate or a quartz substrate.
Claim 8
Dependent Claim 46 words
A plasma processing apparatus according to claim 1, wherein said wall is provided with gas supply holes for supplying the processing gas from its portions where the slits are not located into the plasma producing chamber, the gas supply holes being connected with gas supply means.
Claim 9
Dependent Claim 19 words
A plasma processing apparatus according to claim 1, wherein said slit means is formed by plating onto the wall.
Claim 10
Dependent Claim 26 words
A plasma processing apparatus according to claim 8, wherein said slits means is provided on the side of the cavity resonator with respect to said wall.
Claim 11
Dependent Claim 45 words
A plasma processing apparatus according to claim 1, wherein an electrode on which the substrate is placed is arranged in the plasma producing chamber, and a high frequency power supply is connected between the slit means and the electrode on which the substrate is placed.
Claim 12
Dependent Claim 33 words
A plasma processing apparatus according to claim 10, wherein a switch for switching the high frequency power supply between the slit means and the electrode on which the substrate is placed is provided.
Claim 13
Dependent Claim 21 words
A plasma processing apparatus according to claim 5, wherein further comprising means for forming a casp magnetic field on the electrodes.

References Cited (Backward Citations)

US4430138A Cited
JPS5613480A Cited
JPS5696841A Cited
US4492620A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-10-11 1992-04-11 1992-10-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-10-11 1996-04-11 1996-10-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-10-11 2000-04-11 2000-10-11 $7700.00 Window Closed / Lapsed

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