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US4784702A
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PIN photodiode formed from an amorphous semiconductor
Assignee: Thales SA
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Filing: 1987-04-16
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Granted: 1988-11-15
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Expires: 2007-04-16
Abstract
Abstract The invention provides a PIN photodiode in which at least one of the P, I, N layers is formed by a composition multi-layer including undoped superimposed layers of amorphous semiconductor and undoped insulator. In one embodiment, the P and N layers are formed by an amorphous multi-layer, with five periods for the P layer and nine periods for the N layer, and the I layer is formed from an amorphous semiconductor.
Inventors
- 👤 Yves Henri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:02
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8163; H10F; H10F10/00; H10F10/10; H10F10/17; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1462; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
55 words
A PIN photodiode formed from an amorphous semiconductor, having an intrinsic semiconductor zone sandwiched between two outer zones, wherein at least one of said two outer zones is formed by a multilayer composition comprising undoped alternate layers of an amorphous semiconductor and an insulator, the other zones of the diode being formed with amorphous semiconductor.
Claim 2
Dependent Claim
55 words
A PIN photodiode formed from an amorphous semiconductor, having an intrinsic semiconductor zone sandwiched between two outer zones, wherein at least one of said two outer zones is formed by a multilayer composition comprising undoped alternate layers of an amorphous semiconductor and an insulator, the other zones of the diode being formed with amorphous semiconductor.
Claim 3
Dependent Claim
35 words
A photodiode as claimed in claim 1, wherein said one outer zone is formed from a multilayer composition formed by the superimposition of undoped alternate layers of an amorphous semiconductor and a positively charged insulator.
Claim 4
Dependent Claim
30 words
A photodiode as claimed in claim 2, wherein the positively charged insulator has the following formula: SiCx with x larger than 0.5, or SiOx with x not larger than 2.
Claim 5
Dependent Claim
35 words
A photodiode as claimed in claim 1, wherein said one outer zone is formed by a multilayer composition obtained by the superimposition of undoped alternate layers of an amorphous semiconductor and a negatively charged insulator.
Claim 6
Dependent Claim
41 words
The photodiode as claimed in claim 4, wherein said negatively charged insulator has the following formula: SiyNx, with y and x not larger than 3 and 4, respectively, or AlxOy with x and y not larger than 2 and 3, respectively.
Claim 7
Dependent Claim
16 words
The photodiode as claimed in claim 1, wherein said undoped amorphous semiconductor is hydrogenated amorphous silicon.
Claim 8
Dependent Claim
15 words
The photodiode as claimed in claim 1, wherein the insulator is a hydrogenated amorphous insulator.
Claim 9
Dependent Claim
62 words
A PIN photodiode comprising P-type and N-type outer zones bounding an intrinsic inner zone, characterized in that at least one of the two outer zones comprises a multilayer including a plurality of successive periods, each period including a layer of an undoped amorphous semiconductor contiguous to a layer of an undoped amorphous insulator, and any remaining zones being of an amorphous semiconductor.
Claim 10
Dependent Claim
62 words
A PIN photodiode comprising P-type and N-type outer zones bounding an intrinsic inner zone, characterized in that at least one of the two outer zones comprises a multilayer including a plurality of successive periods, each period including a layer of an undoped amorphous semiconductor contiguous to a layer of an undoped amorphous insulator, and any remaining zones being of an amorphous semiconductor.
Claim 11
Dependent Claim
32 words
A PIN photodiode in accordance with claim 8 in which each of the layers of amorphous insulator is sufficiently thin that charges carriers generated in the intrinsic inner zone can tunnel therethrough.
Claim 12
Dependent Claim
25 words
A PIN photodiode in accordance with claim 9 in which the undoped semiconductor is hydrogenated silicon and the undoped amorphous insulator is hydrogenated silicon oxide.
Claim 13
Dependent Claim
26 words
A PIN photodiode in accordance with claim 9 in which the undoped amorphous semiconductor is hydrogenated silicon and the undoped amorphous insulator is hydrogenated silicon nitride.
Claim 14
Dependent Claim
56 words
A PIN photodiode in accordance with claim 9 in which each of the outer zones comprises a multilayer including a plurality of successive periods, each period including a layer of undoped amorphous semiconductor contiguous to a layer of an undoped amorphous insulator, the forbidden energy gap of the insulator being wider than that of the semiconductor.
Claim 15
Dependent Claim
30 words
A PIN photodiode in accordance with claim 8 in which each of the two outer zones comprises a multilayer comprising alternate layers of undoped amorphous semiconductor and an undoped insulator.
Claim 16
Dependent Claim
34 words
A PIN photodiode in accordance with claim 8 in which each of the two outer zones and the inner zone comprises a multilayer comprising alternate layers of undoped amorphous semiconductor and an undoped insulator.
Claim 17
Dependent Claim
28 words
A PIN photodiode in accordance with claim 8 in which the inner zone also comprises a multilayer comprising alternate layers of undoped amorphous semiconductor and an undoped insulator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |