Patent US4785188A successfully refreshed from Google Patents.
US4785188A
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Primary particle beam irradiation apparatus and method of irradiation thereof
Assignee: Tokyo Electron Ltd
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Filing: 1987-09-29
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Granted: 1988-11-15
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Expires: 2007-09-29
Abstract
Abstract A primary particle beam irradiation apparatus comprising a stage on which a target is placed; a device for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor for detecting a secondary ion, generated by an irradiation of the primary particle beam, from the stage or the target; and a device, connected to the irradiating device and the secondary ion sensor, for controlling the irradiating means on the basis of an output signal from the secondary ion sensor. Further, a method for irradation of a primary particle beam comprising the step of detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.
Inventors
- 👤 Haruhisa Mori
- 👤 Tadayuki Kojima
- 👤 Satoshi Hasui
- 👤 Hiroshi Ohmori
- 👤 Shuji Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:08
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J37/02; H01J37/244; H01J37/304; H10; H10P; H10P30/00; H10P30/20
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
85 words
A primary particle beam irradiation apparatus comprising: a stage on which a target is placed; means for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor which selectively detects secondary ions generated at a predetermined irradiation position of said primary particle beam on said stage or the target; and means, connected to said irradiating means and said secondary ion sensor, for controlling said irradiating means on the basis of an output signal from said secondary ion sensor.
Claim 2
Dependent Claim
85 words
A primary particle beam irradiation apparatus comprising: a stage on which a target is placed; means for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor which selectively detects secondary ions generated at a predetermined irradiation position of said primary particle beam on said stage or the target; and means, connected to said irradiating means and said secondary ion sensor, for controlling said irradiating means on the basis of an output signal from said secondary ion sensor.
Claim 3
Dependent Claim
19 words
A primary particle beam irradiation apparatus according to claim 1, wherein the primary particle beam is an ion beam.
Claim 4
Dependent Claim
19 words
A primary particle beam irradiation apparatus according to claim 1, wherein the primary particle beam is a neutral beam.
Claim 5
Dependent Claim
72 words
A primary particle beam irradiation apparatus according to claim 1, wherein the target is a plurality of semiconductor wafers arranged on a rotating disk along the circumferential direction, the primary particle beam is scanned over a predetermined width including a width of said wafer in the radial direction of the rotating disk, and the secondary ion sensor is provided near one end or two ends of the region of the predetermined width.
Claim 6
Dependent Claim
30 words
A primary particle beam irradiation apparatus according to claim 1, wherein said secondary ion sensor is provided with an electrode given a bias potential for flow of the secondary ions.
Claim 7
Dependent Claim
38 words
A primary particle beam irradiation apparatus according to claim 1, wherein said stage comprises a rotating disk on which a plurality of targets are placed, said primary particle beam moving in the radial direction of said rotating disk.
Claim 8
Dependent Claim
34 words
A primary particle beam irradiation apparatus according to claim 1, wherein said secondary ion sensor is arranged so as to generate the maximum output when said beam irradiates a predetermined position on said stage.
Claim 9
Dependent Claim
29 words
A primary particle beam irradiation apparatus according to claim 1, wherein said controlling means corrects the irradiation position on the basis of the output from said secondary ion sensor.
Claim 10
Dependent Claim
39 words
A primary particle beam irradiation apparatus according to claim 1, wherein said secondary ion sensor comprises two sensor elements, each of said sensor elements being arranged at the position corresponding to each edge of said predetermined scan region, respectively.
Claim 11
Dependent Claim
63 words
A primary particle beam irradiation apparatus according to claim 1, wherein said controlling means comprises a peak position detector for detecting the peak of the output from said secondary ion sensor and a comparison circuit for comparing the output from said peak position detector with a reference signal, said irradiating means being controlled on the basis of the output from said comparison circuit.
Claim 12
Independent Claim
109 words
A method for irradiation of a primary particle beam comprising the step of: detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target for selectively detecting secondary ions generated at a predetermined irradiation position of said primary particle beam; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.
Claim 13
Independent Claim
109 words
A method for irradiation of a primary particle beam comprising the step of: detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target for selectively detecting secondary ions generated at a predetermined irradiation position of said primary particle beam; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.
Claim 14
Dependent Claim
30 words
A method for irradiation of a primary particle beam according to claim 11, wherein the detection step and correction step are repeated with each irradiation step until the last step.
Claim 15
Dependent Claim
45 words
A method for irradiation of a primary particle beam according to claim 11, wherein the detection step and correction step performed before the irradiation step are repeated for just a predetermined few times at an initial period and then the irradiation steps are continuously repeated.
Claim 16
Dependent Claim
22 words
A method for irradiation of a primary particle beam according to claim 11, wherein the primary particle beam is an ion beam.
Claim 17
Dependent Claim
21 words
A method for irradiation of a primary particle beam according to claim 11, wherein the primary particle beam is neutral beam.
Claim 18
Dependent Claim
75 words
A method for irradiation of a primary particle beam according to claim 11, wherein the target is a plurality of semiconductor wafers arranged on a rotating disk along the circumferential direction, the primary particle beam is scanned over a predetermined width including a width of said wafer in the radial direction of the rotating disk, and the secondary ion sensor is provided near one end or two ends of the region of the predetermined width.
Claim 19
Dependent Claim
33 words
A method for irradiation of a primary particle beam according to claim 11, wherein said secondary ion sensor is provided with an electrode given a bias potential for flow of the secondary ions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-15 | 1992-05-16 | 1992-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-15 | 1996-05-16 | 1996-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-15 | 2000-05-16 | 2000-11-15 | $7700.00 | Window Closed / Lapsed |