Via in a planarized dielectric and process for producing same

Claim 2

An improved integrated circuit structure having an interconnection of adjacent metal layers wherein a first metal layer is coated with a dielectric material and another metal layer is applied over the dielectric layer, said interconnection comprising a filled via electrically interconnecting at least a portion of said first metal layer with at least a portion of said second metal layer and having a first segment of constant width dimension adjacent said first metal layer and an enlarged generally hemispherical shaped second segment adjacent said second metal layer formed by masking said dielectric with a mask having an opening conforming to said first segment and isotropically etching a portion of the dielectric through the mask to provide said generally hemispherical shaped enlarged second segment adjacent the upper surface of the dielectric.

Claim 3

The structure of claim 1 wherein the dielectric separating the adjacent metal layers is planarized to provide a more uniform upper metla layer.

Claim 4

The structure of claim 2 wherein the planarized dielectric structure is provided by applying a first dielectric layer, planarizing the layer, and then applying a further dielectric layer followed by planarization of the further dielectric layer.

Claim 5

An improved integrated circuit structure comprising two metal layers separated by a dielectric layer and electrically connected together by an improved via interconnect comprising an opening extending through said dielectric layer and filled with a conductive material for interconnecting said two metal layers separated by said dielectric layer, said via interconnect comprising an enlarged generally hemishperical shaped first portion formed by isotropically etching said generally hemispherical shaped first portion through a part of said dielectric layer from a first surface of said dielectric layer and a smaller diameter second portion having sidewalls approximately normal to said first surface formed by anistropically etching through the remainder of the dielectric layer to the opposite surface of the dielectric layer.

Claim 6

An improved integrated circuit structure comprising two metal layers separated by a dielectric layer and electrically connected together by an improved via interconnect comprising an opening extending through said dielectric layer and filled with a conductive material for interconnecting said two metal layers separated by said dielectric layer, said via interconnect comprising an enlarged generally hemishperical shaped first portion formed by isotropically etching said generally hemispherical shaped first portion through a part of said dielectric layer from a first surface of said dielectric layer and a smaller diameter second portion having sidewalls approximately normal to said first surface formed by anistropically etching through the remainder of the dielectric layer to the opposite surface of the dielectric layer.

Claim 7

An improved integrated circuit structure having a conductive interconnection between two metal layers comprising: (a) a first metal layer; (b) a dielectric layer formed over said first metal layer and having a first surface in contact with said first metal layer; (c) a second metal layer formed over a second surface of said dielectric layer and extending into an opening in said dielectric layer to electrically communicate with said first metal layer, said opening in said dielectric layer comprising: (1) a first generally hemispherical portion formed by partially isotropically etching said dielectric layer to within about 0.5 microns of said first surface through a mask opening in a mask formed on said second surface of said dielectric layer, said mask opening therein having a fixed dimension whereby said first portion of said opening will have a diameter adjacent said mask which is wider than the diameter of said mask opening and said diameter of said first portion of said opening will gradually diminish due to the isotropic nature of said etch; and (2) a second portion of said opening having approximately the same diameter as the diameter of said mask formed through the remainder of said dielectric layer from the bottom of said first portion to said first surface of said dielectric layer by anisotropically etching the remainder of the thickness of said dielectric layer using the same mask opening whereby said second portion of said opening will be of constant diameter due to the anisotropic nature of said second etch, and both of said openings will be concentric due to the use of a single mask to form both openings.

Claim 8

An improved integrated circuit structure having a conductive interconnection between two metal layers comprising: (a) a first metal layer; (b) a dielectric layer formed over said first metal layer and having a first surface in contact with said first metal layer; (c) a second metal layer formed over a second surface of said dielectric layer and extending into an opening in said dielectric layer to electrically communicate with said first metal layer, said opening in said dielectric layer comprising: (1) a first generally hemispherical portion formed by partially isotropically etching said dielectric layer to within about 0.5 microns of said first surface through a mask opening in a mask formed on said second surface of said dielectric layer, said mask opening therein having a fixed dimension whereby said first portion of said opening will have a diameter adjacent said mask which is wider than the diameter of said mask opening and said diameter of said first portion of said opening will gradually diminish due to the isotropic nature of said etch; and (2) a second portion of said opening having approximately the same diameter as the diameter of said mask formed through the remainder of said dielectric layer from the bottom of said first portion to said first surface of said dielectric layer by anisotropically etching the remainder of the thickness of said dielectric layer using the same mask opening whereby said second portion of said opening will be of constant diameter due to the anisotropic nature of said second etch, and both of said openings will be concentric due to the use of a single mask to form both openings.

Claim 9

The improved integrated circuit structure of claim 5 wherein said dielectric layer has a thickness of from about 1 to about 2 microns.

Claim 10

An improved integrated circuit structure comprising two metal layers separated by a dielectric layer and electrically connected together by an improved via interconnect comprising an opening extending through said dielectric layer and filled with a conductive material for interconnecting said two metal layers separated by said dielectric layer, said opening further comprising an enlarged generally hemispherical shaped first portion etched into said dielectric layer from a first surface of said dielectric layer and a smaller diameter second portion having sidewalls approximately normal to said first surface and extending from said enlarged portion through the remainder of said dielectric layer to the opposite surface of said dielectric layer.

Claim 11

An improved integrated circuit structure comprising two metal layers separated by a dielectric layer and electrically connected together by an improved via interconnect comprising an opening extending through said dielectric layer and filled with a conductive material for interconnecting said two metal layers separated by said dielectric layer, said opening further comprising an enlarged generally hemispherical shaped first portion etched into said dielectric layer from a first surface of said dielectric layer and a smaller diameter second portion having sidewalls approximately normal to said first surface and extending from said enlarged portion through the remainder of said dielectric layer to the opposite surface of said dielectric layer.