US4801560A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor processing utilizing carbon containing thick film spin-on glass
Assignee: NXP USA Inc
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Filing: 1987-10-02
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Granted: 1989-01-31
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Expires: 2007-10-02
Abstract
Abstract Described is a process of utilizing carbon containing thick film spin-on glass with a directional etching process, such as RIE, or a downstream etching mechanism. As a layer of photoresist is etched from the surface of the spin-on glass, a skin layer of carbonless glass results. The skin layer protects the remaining glass from having the carbon removed allowing the use of spin-on glass on the order of 10,000 Angstroms thick.
Inventors
- 👤 Thomas E. Wood
- 👤 Henry G. Hughes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:53
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
100 words
A method of producing semiconductor devices comprising the steps of: providing a substrate; depositing a first layer of spin-on glass which contains carbon on a surface of said substrate; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a directional etching mechanism; and removing carbon from a top skin of said first layer of spin-on glass which contains carbon.
Claim 2
Independent Claim
100 words
A method of producing semiconductor devices comprising the steps of: providing a substrate; depositing a first layer of spin-on glass which contains carbon on a surface of said substrate; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a directional etching mechanism; and removing carbon from a top skin of said first layer of spin-on glass which contains carbon.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said substrate is a metal.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said first layer of spin-on glass which contains carbon has a thickness between approximately 2500 Angstroms and 10,000 Angstroms.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein said directional etching mechanism is a reactive ion etching mechanism.
Claim 6
Dependent Claim
35 words
The method of claim 1 further comprising the step of depositing a first layer of chemical vapor deposited oxide on said substrate between said substrate and said first layer of spin-on glass which contains carbon.
Claim 7
Dependent Claim
149 words
The method of claim 5 further comprising the steps of: depositing a second layer of spin-on glass which contains carbon on said first layer of chemical vapor deposited oxide between said first layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; depositing a second layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon between said first and second layers of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide between said second layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; and depositing a third layer of chemical vapor deposited oxide on said third layer of spin-on glass which contains carbon between said first and third layers of spin-on glass which contains carbon.
Claim 8
Independent Claim
100 words
A method of producing semiconductor devices comprising the steps of: providing a substrate; depositing a first layer of spin-on glass which contains carbon on a surface of said substrate; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a downstream etching mechanism; and removing carbon from a top skin of said first layer of spin-on glass which contains carbon.
Claim 9
Independent Claim
100 words
A method of producing semiconductor devices comprising the steps of: providing a substrate; depositing a first layer of spin-on glass which contains carbon on a surface of said substrate; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a downstream etching mechanism; and removing carbon from a top skin of said first layer of spin-on glass which contains carbon.
Claim 10
Dependent Claim
11 words
The method of claim 7 wherein said substrate is a metal.
Claim 11
Dependent Claim
25 words
The method of claim 7 wherein said first layer of spin-on glass which contains carbon has a thickness between approximately 2500 Angstroms and 10,000 Angstroms.
Claim 12
Dependent Claim
35 words
The method of claim 7 further comprising the step of depositing a first layer of chemical vapor deposited oxide on said substrate between said substrate and said first layer of spin-on glass which contains carbon.
Claim 13
Dependent Claim
149 words
The method of claim 10 further comprising the steps of: depositing a second layer of spin-on glass which contains carbon on said first layer of chemical vapor deposited oxide between said first layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; depositing a second layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon between said first and second layers of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide between said second layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; and depositing a third layer of chemical vapor deposited oxide on said third layer of spin-on glass which contains carbon between said first and third layers of spin-on glass which contains carbon.
Claim 14
Independent Claim
144 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a directional etching mechanism; removing carbon from a top skin of said spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said first layer of spin-on glass which contains carbon.
Claim 15
Independent Claim
144 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said first layer of spin-on glass which contains carbon; masking and developing said photoresist; etching through said first layer of spin-on glass which contains carbon in an area defined by said photoresist to said substrate; removing said layer of photoresist utilizing a directional etching mechanism; removing carbon from a top skin of said spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said first layer of spin-on glass which contains carbon.
Claim 16
Dependent Claim
25 words
The method of claim 12 wherein said first layer of spin-on glass which contains carbon has a thickness between approximately 2500 Angstroms and 10,000 Angstroms.
Claim 17
Dependent Claim
16 words
The method of claim 12 wherein said directional etching mechanism is a reactive ion etching mechanism.
Claim 18
Dependent Claim
149 words
The method of claim 12 further comprising the steps of: depositing a second layer of spin-on glass which contains carbon on said first layer of chemical vapor deposited oxide between said first layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; depositing a second layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon between said first and second layers of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide between said second layer of chemical vapor deposited oxide and said first layer of spin-on glass which contains carbon; and depositing a third layer of chemical vapor deposited oxide on said third layer of spin-on glass which contains carbon between said first and third layers of spin-on glass which contains carbon.
Claim 19
Independent Claim
235 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a second layer of chemical vapor deposited oxide on said first layer of spin-on glass which contains carbon; depositing a second layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide; depositing a third layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said third layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said third layer of spin-on glass which contains carbon; masking and developing said photoresist; etching said first, second and third layers of spin-on glass which contains carbon and said first, second and third layers of said chemical vapor deposited oxide in an area defined by said photoresist; removing said layer of photoresist utilizing a directional etching mechanism; removing carbon from a top skin of said third layer of spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said third layer of spin-on glass which contains carbon.
Claim 20
Independent Claim
235 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a second layer of chemical vapor deposited oxide on said first layer of spin-on glass which contains carbon; depositing a second layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide; depositing a third layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said third layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said third layer of spin-on glass which contains carbon; masking and developing said photoresist; etching said first, second and third layers of spin-on glass which contains carbon and said first, second and third layers of said chemical vapor deposited oxide in an area defined by said photoresist; removing said layer of photoresist utilizing a directional etching mechanism; removing carbon from a top skin of said third layer of spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said third layer of spin-on glass which contains carbon.
Claim 21
Dependent Claim
28 words
The method of claim 16 wherein said first, second and third layers of spin-on glass which contains carbon have a thickness between approximately 2500 Angstroms and 10,000 Angstroms.
Claim 22
Dependent Claim
16 words
The method of claim 16 wherein said directional etching mechanism is a reactive ion etching mechanism.
Claim 23
Independent Claim
235 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a second layer of chemical vapor deposited oxide on said first layer of spin-on glass which contains carbon; depositing a second layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide; depositing a third layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said third layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said third layer of spin-on glass which contains carbon; masking and developing said photoresist; etching said first, second and third layers of spin-on glass which contains carbon and said first, second and third layers of said chemical vapor deposited oxide in an area defined by said photoresist; removing said layer of photoresist utilizing a downstream etching mechanism; removing carbon from a top skin of said third layer of spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said third layer of spin-on glass which contains carbon.
Claim 24
Independent Claim
235 words
A method of producing semiconductor devices comprising the steps of: providing a first metal layer on a substrate; depositing a first layer of chemical vapor deposited oxide on a surface of said first metal layer; depositing a first layer of spin-on glass which contains carbon on a surface of said first layer of chemical vapor deposited oxide; depositing a second layer of chemical vapor deposited oxide on said first layer of spin-on glass which contains carbon; depositing a second layer of spin-on glass which contains carbon on said second layer of chemical vapor deposited oxide; depositing a third layer of chemical vapor deposited oxide on said second layer of spin-on glass which contains carbon; depositing a third layer of spin-on glass which contains carbon on said third layer of chemical vapor deposited oxide; depositing a layer of photoresist on a surface of said third layer of spin-on glass which contains carbon; masking and developing said photoresist; etching said first, second and third layers of spin-on glass which contains carbon and said first, second and third layers of said chemical vapor deposited oxide in an area defined by said photoresist; removing said layer of photoresist utilizing a downstream etching mechanism; removing carbon from a top skin of said third layer of spin-on glass which contains carbon; and depositing a second metal layer on said top skin of said third layer of spin-on glass which contains carbon.
Claim 25
Dependent Claim
28 words
The method of claim 19 wherein said first, second and third layers of spin-on glass which contains carbon have a thickness between approximately 2500 Angstroms and 10,000 Angstroms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-31 | 1992-08-01 | 1993-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-31 | 1996-08-01 | 1997-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-31 | 2000-08-01 | 2001-01-31 | $7700.00 | Window Closed / Lapsed |