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US4801867A Expired / Lapsed US ⏱️ 0.0 years remaining

Monolithic microwave integrated circuit with probing pads

Assignee: Sumitomo Electric Industries Ltd
•
Filing: 1987-11-06
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Granted: 1989-01-31
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Expires: 2007-11-06
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Abstract

Abstract In monolithic microwave integrated circuits of resistance-capacitance construction, selection after production can be easily performed without sacrificing high frequency characteristics by adding thereto composing pads such as pads for signal, pads for power source, pads for bias and the like and pads for measuring direct current characteristics and selecting chips. Further, said monolithic microwave integrated circuits added with pads for measuring and selecting direct current characteristics can be easily selected by probing them on wafers.

Inventors

  • 👤 Tomihiro Suzuki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 11:16
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/273; H10W; H10W44/00; H10W44/20

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 198 words
A monolithic microwave integrated circuit wafer used as an intermediate product in the production of integrated circuits, comprising: a substrate; and a plurality of separate and distinct circuits, similar to each other, integrated on the surface of said substrate, each such circuit having at least two stages that are resistance-capacitance coupled to one another, each of said stages including at least one resistor, at least one capacitor having an upper electrode, a transistor and one or more bonding pads, each of said separate and distinct circuits also including composing pads, at least one of which is mounted on said upper electrode of said at least one capacitor in each of the separate and distinct circuits to avoid deterioration of high frequency characteristics, and said composing pads being connected between at least one terminal of said transistor and said at least one resistor in each of said stages for measuring direct current and high frequency characteristics of at least said transistor in each of said circuits to thereby identify inoperative circuits in said plurality of separate and distinct circuits of said substrate so as to aid in chip selection before the substrate is diced into physically separate circuit chips.
Claim 2
Dependent Claim 198 words
A monolithic microwave integrated circuit wafer used as an intermediate product in the production of integrated circuits, comprising: a substrate; and a plurality of separate and distinct circuits, similar to each other, integrated on the surface of said substrate, each such circuit having at least two stages that are resistance-capacitance coupled to one another, each of said stages including at least one resistor, at least one capacitor having an upper electrode, a transistor and one or more bonding pads, each of said separate and distinct circuits also including composing pads, at least one of which is mounted on said upper electrode of said at least one capacitor in each of the separate and distinct circuits to avoid deterioration of high frequency characteristics, and said composing pads being connected between at least one terminal of said transistor and said at least one resistor in each of said stages for measuring direct current and high frequency characteristics of at least said transistor in each of said circuits to thereby identify inoperative circuits in said plurality of separate and distinct circuits of said substrate so as to aid in chip selection before the substrate is diced into physically separate circuit chips.

References Cited (Backward Citations)

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US3922707A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-01-31 1992-08-01 1993-01-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-01-31 1996-08-01 1997-01-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-01-31 2000-08-01 2001-01-31 $7700.00 Window Closed / Lapsed

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