Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
105 words
A method of securing an electronic component having a contacting layer to a contacting surface of a substrate by pressure sintering, comprising steps of: applying a layer of a paste formed of metal powder and a solvent onto at least one of said contacting layers of the component and the contacting surface of the substrate; fully drying the applied paste; placing the component onto the substrate to form an assembly after the applied paste is fully dried; and heating the assembly to a sintering temperature with simultaneous application of a mechanical pressure of at least 900 N/cm 2 so as to perform said pressure sintering.
Claim 2
Independent Claim
105 words
A method of securing an electronic component having a contacting layer to a contacting surface of a substrate by pressure sintering, comprising steps of: applying a layer of a paste formed of metal powder and a solvent onto at least one of said contacting layers of the component and the contacting surface of the substrate; fully drying the applied paste; placing the component onto the substrate to form an assembly after the applied paste is fully dried; and heating the assembly to a sintering temperature with simultaneous application of a mechanical pressure of at least 900 N/cm 2 so as to perform said pressure sintering.
Claim 3
Dependent Claim
19 words
A method according to claim 1 wherein a powder of a noble metal is used as said metal powder.
Claim 4
Dependent Claim
20 words
A method according to claim 1 wherein a powder of a noble metal alloy is used as said metal powder.
Claim 5
Dependent Claim
15 words
A method according to claim 2 wherein silver powder is used as said metal powder.
Claim 6
Dependent Claim
19 words
A method according to claim 3 wherein a powder of a silver alloy is used as said metal powder.
Claim 7
Dependent Claim
20 words
A method according to claim 1 wherein said mechanical pressure is at least 1000 N/cm 2 during the pressure sintering.
Claim 8
Dependent Claim
20 words
A method according to claim 1 wherein said mechanical pressure is at least 1500 N/cm 2 during the pressure sintering.
Claim 9
Dependent Claim
26 words
A method according to claim 1 wherein said mechanical pressure corresponds at least to a given operating pressure of the pressure-contacted component during said pressure sintering.
Claim 10
Dependent Claim
38 words
A method according to claim 1 wherein prior to the pressure sintering, the component and the substrate are heated in pressure-free fashion to a temperature which is below the sintering temperature, and which is at least 100° C.
Claim 11
Dependent Claim
31 words
A method according to claim 9 wherein the component and the substrate are heated in pressure-free fashion to a temperature which corresponds approximately to a given operating temperature of the component.
Claim 12
Dependent Claim
22 words
A method according to claim 1 wherein the pressure sintering is carried out at a sintering temperature of at least 150° C.
Claim 13
Dependent Claim
24 words
A method according to claim 1 wherein the pressure sintering is carried out at a sintering temperature of between 180° C. and 250° C.
Claim 14
Dependent Claim
25 words
A method according to claim 1 wherein the pressure sintering is carried out in a press in which heated rams are applied to the assembly.
Claim 15
Dependent Claim
23 words
A method according to claim 1 wherein during the pressure sintering a top of the component is protected by a deformable intermediate layer.
Claim 16
Dependent Claim
33 words
A method according to claim 14 wherein during the pressure sintering a second intermediate layer formed of a hard material which has a low heat expansion coefficient is arranged above the intermediate layer.
Claim 17
Dependent Claim
16 words
A method according to claim 1 wherein the pressure sintering is followed by a pressure-free re-sintering.
Claim 18
Dependent Claim
33 words
A method according to claim 16 wherein sintering times of approximately one minute are selected for the pressure sintering, and sintering times in a range of several minutes are selected for the re-sintering.
Claim 19
Dependent Claim
15 words
A method according to claim 1 wherein the electronic component is a large-area power thyristor.
Claim 20
Dependent Claim
22 words
A method according to claim 18 wherein said substrate is molybdenum, said contacting surface comprises silver, and said contacting layer comprises silver.
Claim 21
Independent Claim
118 words
A method of securing a semiconductor wafer having an electrically conductive contacting layer to an electrically conductive contacting surface of a substrate by pressure sintering, comprising steps of: applying a layer of a paste formed of metal powder and a solvent onto at least one of said contacting layer of the wafer and the contacting surface of the substrate; substantially completely drying the applied paste to fully drive out the solvent; placing the wafer onto the substrate after the applied paste is substantially fully dried to form an assembly; and heating the assembly to a sintering temperature and applying a mechanical pressure of at least 900 N/cm 2 during the heating so as to perform said pressure sintering.
Claim 22
Independent Claim
118 words
A method of securing a semiconductor wafer having an electrically conductive contacting layer to an electrically conductive contacting surface of a substrate by pressure sintering, comprising steps of: applying a layer of a paste formed of metal powder and a solvent onto at least one of said contacting layer of the wafer and the contacting surface of the substrate; substantially completely drying the applied paste to fully drive out the solvent; placing the wafer onto the substrate after the applied paste is substantially fully dried to form an assembly; and heating the assembly to a sintering temperature and applying a mechanical pressure of at least 900 N/cm 2 during the heating so as to perform said pressure sintering.
Claim 23
Dependent Claim
15 words
A method according to claim 20 wherein said semiconductor wafer comprises a large-area power semiconductor.
Claim 24
Dependent Claim
15 words
A method according to claim 20 wherein the sintering temperature is less than 250° C.