Directly solderable three-dimensional electrically conductive circuit components and process for the preparation thereof

Claim 2

An article of manufacture comprising: (I) a molded, solderable, thermoplastic resin substrate having at least two smooth surfaces; (II) a firmly adherent and substantially uniform layer of at least one conductive metal deposited in a selected circuit pattern on at least one of said surfaces by sputtering; and, optionally, (III) 0% to 70% of a reinforcement contained in the substrate.

Claim 3

An article as recited in claim 1 wherein the substrate is arc-shaped.

Claim 4

An article as recited in claim 1 wherein the substrate is a profiled three-dimensional structure.

Claim 5

An article as recited in claim 1 wherein the substrate is provided with at least one through-hole connecting at least two of said smooth surfaces and a firmly adherent and substantially uniform metal layer is sputter-deposited into and through at least one through-hole and on each of the surfaces connected by said through-hole.

Claim 6

An article as recited in claim 1 wherein the substrate is a polyetherimide, a bismaleimide or a polyether ether ketone resin.

Claim 7

An article as recited in claim 1 further comprising: (IV) an amount of a metal deposited on said firmly adherent and substantially uniform sputter-deposited metal by electroless plating or electrodeposition.

Claim 8

An article as recited in claim 6 wherein the metal deposited by electroless plating or by electrodeposition is copper.

Claim 9

An article as recited in claim 1 wherein, in cross-sectional view through the plane of any of said surfaces on which there is a metal deposited in a selected circuit pattern, said surface immediately adjacent to said metal remains essentially smooth and unaltered, and at least a portion of said metal is embedded into and impregnates said surface.

Claim 10

An article of manufacture comprising: (I) a solderable substrate having at least two smooth surfaces comprising polyetherimide resin of the formula ##STR15## wherein "a" represents a whole number from about 10 to about 10,000, the group --O--A< is selected from: ##STR16## wherein R' is hydrogen, lower alkyl or lower alkoxy; Z is a member of the class consisting of (1) ##STR17## and (2) divalent organic radicals of the general formula ##STR18## where X is a member selected from the class consisting of divalent radicals of the formula ##STR19## where q is 0 or 1, y is a whole number from 1 to 5, and R is a divalent organic radical selected from the class consisting of (1) aromatic hydrocarbon radicals having from 6 to 20 carbon atoms and halogenated derivatives thereof, (2) alkylene radicals and cycloalkylene radicals having from 2-20 carbon atoms, C.sub.(2-8) alkylene-terminated polydiorganosiloxane, and (3) divalent radicals of the formula: ##STR20## where Q is a member selected from the class consisting of ##STR21## where x is a whole number from 1 to 5 inclusive; (II) a firmly adherent and substantially uniform layer of at least one conductive metal deposited in a selected circuit pattern on said substrate by sputtering; and, optionally, (III) 0% to 70% of a reinforcing agent in the substrate selected from glass fibers, carbon fibers, glass beads or mixtures thereof.

Claim 11

An article of manufacture comprising: (I) a solderable substrate having at least two smooth surfaces comprising polyetherimide resin of the formula ##STR15## wherein "a" represents a whole number from about 10 to about 10,000, the group --O--A< is selected from: ##STR16## wherein R' is hydrogen, lower alkyl or lower alkoxy; Z is a member of the class consisting of (1) ##STR17## and (2) divalent organic radicals of the general formula ##STR18## where X is a member selected from the class consisting of divalent radicals of the formula ##STR19## where q is 0 or 1, y is a whole number from 1 to 5, and R is a divalent organic radical selected from the class consisting of (1) aromatic hydrocarbon radicals having from 6 to 20 carbon atoms and halogenated derivatives thereof, (2) alkylene radicals and cycloalkylene radicals having from 2-20 carbon atoms, C.sub.(2-8) alkylene-terminated polydiorganosiloxane, and (3) divalent radicals of the formula: ##STR20## where Q is a member selected from the class consisting of ##STR21## where x is a whole number from 1 to 5 inclusive; (II) a firmly adherent and substantially uniform layer of at least one conductive metal deposited in a selected circuit pattern on said substrate by sputtering; and, optionally, (III) 0% to 70% of a reinforcing agent in the substrate selected from glass fibers, carbon fibers, glass beads or mixtures thereof.

Claim 12

An article as recited in claim 9, wherein the group --O--A< is ##STR22##

Claim 13

An article as recited in claim 10, wherein Z is ##STR23## and R' is ##STR24##

Claim 14

An article as recited in claim 9 wherein the polyetherimide resin is of the formula: ##STR25## wherein n is an integer from 10 to about 100.

Claim 15

An article as recited in claim 12, wherein the metal sputtered onto the substrate is copper.

Claim 16

An article as recited in claim 9, wherein the polyetherimide resin has a glass transition temperature of at least about 200° C.

Claim 17

An article as recited in claim 9 wherein the polyetherimide resin has a glass transition temperature of at least about 215° C.

Claim 18

An article as recited in claim 9 wherein the conductive metal sputtered onto the substrate is selected from copper, silver, gold, aluminum, chromium, titanium, brass, stainless steel or copper/aluminum alloys.

Claim 19

An article as recited in claim 9, wherein the optional reinforcing agent (III) is chopped glass fibers.

Claim 20

An article as recited in claim 17, wherein the glass fibers have chopped strands with average lengths of from about 3 mm to about 6 mm and average diameters of from about 5 microns to about 15 microns and wherein said glass fibers are present at a concentration from about 5% by weight to about 40% by weight of the polyetherimide/glass fiber composition.

Claim 21

An article as recited in claim 9, wherein the optional reinforcing agent (III) is chopped carbon. fibers.

Claim 22

An article as recited in claim 19, wherein the carbon fibers have strands of average lengths of from about 0.4 mm to about 6 mm and average diameters of from about 5 microns to about 25 microns and wherein said carbon fibers are present at a concentration from about 5% by weight to about 30% by weight of the polyetherimide/carbon fiber composition.

Claim 23

An article as recited in claim 9 wherein the optional reinforcing agent (III) is glass beads.

Claim 24

An article as recited in claim 24, wherein the glass beads have an average particle size of from about 1 to about 53 microns, and wherein said glass beads are present at a concentration of from about 5% by weight to about 40% by weight of the polyetherimide/glass bead composition.

Claim 25

An article of manufacture comprising: (I) a molded polyetherimide substrate having at least two smooth surfaces wherein there is provided at least one through-hole connecting at least two of said smooth surfaces, wherein said polyetherimide is comprised of the formula: ##STR26## wherein "n" is an integer from 10 to about 100; (II) a firmly adherent and substantially uniform copper layer sputter-deposited into and through at least one through-hole and in a selected circuit pattern on each of the surfaces connected by said through-hole; and (III) a further amount of copper is deposited on said sputter-deposited layer by electroless plating or by electro-deposition.

Claim 26

An article of manufacture comprising: (I) a molded polyetherimide substrate having at least two smooth surfaces wherein there is provided at least one through-hole connecting at least two of said smooth surfaces, wherein said polyetherimide is comprised of the formula: ##STR26## wherein "n" is an integer from 10 to about 100; (II) a firmly adherent and substantially uniform copper layer sputter-deposited into and through at least one through-hole and in a selected circuit pattern on each of the surfaces connected by said through-hole; and (III) a further amount of copper is deposited on said sputter-deposited layer by electroless plating or by electro-deposition.

Claim 27

A process for depositing a metal pattern on a smooth, solderable, thermoplastic substrate comprising sputtering a conductive metal in a selective pattern under sputtering conditions which provide a firmly adherent and substantially uniform deposited metal pattern on the substrate.

Claim 28

A process for depositing a metal pattern on a smooth, solderable, thermoplastic substrate comprising sputtering a conductive metal in a selective pattern under sputtering conditions which provide a firmly adherent and substantially uniform deposited metal pattern on the substrate.

Claim 29

A process for depositing a metal pattern as recited in claim 24, including the steps of: (a) releasably adhering to the substrate a mask material which exhibits the negative of the metal pattern to be produced; (b) sputtering a conductive metal onto the masked substrate under sputtering conditions which provide a firmly adherent and substantially uniform deposited metal pattern on the substrate; and (c) removing said mask.

Claim 30

A process as recited in claim 25 wherein the solderable thermoplastic substrate comprises a polyetherimide resin, a bismaleimide resin, or a polyether ether ketone.

Claim 31

A process as recited in claim 26 wherein the polyetherimide resin is of the formula: ##STR27## wherein "a" represents a whole number from about 10 to about 10,000, the group --O--A is selected from: ##STR28## wherein R' is hydrogen, lower alkyl or lower alkoxy; Z is a member of the class consisting of (1) ##STR29## and (2) divalent organic radicals of the general formula ##STR30## where X is a member selected from the class consisting of divalent radicals of the formula ##STR31## where q is 0 or 1, y is a whole number from 1 to 5, and R is a divalent organic radical selected from the class consisting of (1) aromatic hydrocarbon radicals having from 6 to 20 carbon atoms and halogenated derivatives thereof, (2) alkylene radicals and cycloalkylene radicals having from 2-20 carbon atoms, C.sub.(2-8) alkylene terminated polydiorganosiloxane, and ( 3) divalent radicals of the formula ##STR32## where Q is a member from the class consisting of ##STR33## where x is a whole number from 1 to 5 inclusive.

Claim 32

A process as recited in claim 27 wherein the group --O--A< is ##STR34##

Claim 33

A process as recited in claim 28, wherein Z is ##STR35## and R is ##STR36##

Claim 34

A process as recited in claim 29 wherein the polyetherimide resin is of the formula: ##STR37##

Claim 35

A process as recited in claim 28 wherein the metal is copper.

Claim 36

A process as recited in claim 25 wherein the substrate and mask temperatures during the sputtering step (b) are from about 200° C. to about 215° C.,

Claim 37

A process as recited in claim 26 wherein the substrate and mask temperatures during sputtering step (b) are not substantially less than the glass transition temperature of the polyetherimide, bismaleimide or polyether ether ketone substrate.

Claim 38

A process as recited in claim 27 wherein, in an optional step (b)', a second metal is sputterdeposited onto the metal sputter-deposited in step (b).

Claim 39

A process as recited in claim 34 wherein, in a second optional step (b)' before step (c), or in an optional step (d) after step (c), a metal is deposited onto the sputtered metal by electroless plating or by electroplating.

Claim 40

A process as recited in claim 35, wherein the metal deposited by electroless plating or by electroplating is copper.

Claim 41

A process as recited in claim 27 wherein, in an optional step (b)' before step (c), or in an optional step (d) after step (c), a metal is deposited onto the sputtered metal by electroless plating or by electroplating.

Claim 42

A process as recited in claim 37, wherein the metal deposited by electroless plating or by electroplating is copper.

Claim 43

A process as recited in claim 26 wherein the sputtered metal is selected from copper, silver, gold, brass, aluminum, chromium, titanium, stainless steel, aluminum/copper alloys or mixtures of any of the foregoing.

Claim 44

A process as recited in claim 25 wherein the substrate and mask temperatures during the sputtering step (b) are from about 100° C. to about 215° C.

Claim 45

A process as recited in claim 25 wherein the substrate and mask temperatures during the sputtering step (b) are from about 150° C. to about 215° C.

Claim 46

An article comprising a three-dimensional electrically conductive and directly solderable circuit component made by the process of claim 24.