US4829023A
Expired / Lapsed
US
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Method of producing a semiconductor laser
Assignee: Mitsubishi Electric Corp
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Filing: 1987-11-30
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Granted: 1989-05-09
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Expires: 2007-11-30
Abstract
Abstract A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.
Inventors
- 👤 Yutaka Nagai
- 👤 Yutaka Mihashi
- 👤 Tetsuya Yagi
- 👤 Yoichiro Ota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:29
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2237; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/056; Y10S148/095; Y10S148/118
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
89 words
A method for producing a semiconductor laser including: growing at least two semiconductor layers successively on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum; etching a stripe groove through said finally grown layer to expose part of said layer containing aluminum; growing a second layer not containing aluminum on said finally grown layer and the exposed portion of said layer containing aluminum; and growing a second layer containing aluminum on said second layer not containing aluminum.
Claim 2
Independent Claim
89 words
A method for producing a semiconductor laser including: growing at least two semiconductor layers successively on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum; etching a stripe groove through said finally grown layer to expose part of said layer containing aluminum; growing a second layer not containing aluminum on said finally grown layer and the exposed portion of said layer containing aluminum; and growing a second layer containing aluminum on said second layer not containing aluminum.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said second layer not containing aluminum is grown to a thickness larger than 10 nanometers and less than the thickness of said finally grown layer.
Claim 4
Dependent Claim
72 words
The method of claim 1 wherein said substrate comprises a first conductivity type GaAs and including growing a first conductivity type Al x Ga 1-x As layer as said layer grown immediately before the finally grown layer, growing a GaAs layer of a second conductivity type, different from said first conductivity type, as said finally grown layer, and growing a first conductivity type GaAs layer as said second layer not containing aluminum.
Claim 5
Dependent Claim
18 words
The method of claim 3 including growing Al y Ga 1-y As as said second layer containing aluminum.
Claim 6
Independent Claim
143 words
A method for producing a semiconductor laser including: successively growing on a GaAs substrate of a first conductivity type a first buffer layer of Al x Ga 1-x As of said first conductivity type and a current blocking layer of GaAs of a second conductivity type different from said first conductivity type; etching a stripe groove through said current blocking layer to expose part of said first buffer layer; growing a second buffer layer of GaAs of said first conductivity type on said current blocking layer and the exposed portion of said first buffer layer; and successively growing on said second buffer layer a first cladding layer of Al y Ga 1-y As of said first conductivity type, an active layer of Al z Ga 1-z As, and a second cladding layer of Al y Ga 1-y As of said second conductivity type.
Claim 7
Independent Claim
143 words
A method for producing a semiconductor laser including: successively growing on a GaAs substrate of a first conductivity type a first buffer layer of Al x Ga 1-x As of said first conductivity type and a current blocking layer of GaAs of a second conductivity type different from said first conductivity type; etching a stripe groove through said current blocking layer to expose part of said first buffer layer; growing a second buffer layer of GaAs of said first conductivity type on said current blocking layer and the exposed portion of said first buffer layer; and successively growing on said second buffer layer a first cladding layer of Al y Ga 1-y As of said first conductivity type, an active layer of Al z Ga 1-z As, and a second cladding layer of Al y Ga 1-y As of said second conductivity type.
Claim 8
Dependent Claim
27 words
The method of claim 5 wherein said second buffer layer has a thickness larger than 10 nanometers and less than the thickness of said current blocking layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |