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US4836902A Expired / Lapsed US ⏱️ 0.0 years remaining

Method and apparatus for removing coating from substrate

Assignee: Nortel Networks Ltd
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Filing: 1987-10-09
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Granted: 1989-06-06
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Expires: 2007-10-09
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Abstract

Abstract In a method and apparatus for plasma stripping a polymer photoresist coating from a semiconductor substrate, ultraviolet radiation generated as a byproduct of plasma generation is absorbed by a baffle placed between a plasma source and the substrate. The baffle inhibits incidence of ultraviolet light on the substrate while permitting flow of activated gas onto the substrate to chemically strip the photoresist from the substrate. Use of the baffle reduces microscopic damage to the substrate.

Inventors

  • 👤 Alexander Kalnitsky
  • 👤 Joseph P. Ellul
  • 👤 Sing P. Tay

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 02:05
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32871; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 112 words
A method for removing a layer of coating material from a silicon substrate, comprising: activating a gas in an activation chamber; and absorbing ultraviolet radiation generated during activation of the gas at at least one ulraviolet radiation absorbing surface which is constructed of polysilicon and passivated by oxidation, said at least one ultraviolet radiation absorbing surface being arranged to block any straight line path from the activation chamber to the silicon substrate; while passing the activated gas from the activation chamber past the at least one ultraviolet radiation absorbing surface and into contact with the layer of coating material to break down the coating material and strip it from the silicon substrate.
Claim 2
Independent Claim 112 words
A method for removing a layer of coating material from a silicon substrate, comprising: activating a gas in an activation chamber; and absorbing ultraviolet radiation generated during activation of the gas at at least one ulraviolet radiation absorbing surface which is constructed of polysilicon and passivated by oxidation, said at least one ultraviolet radiation absorbing surface being arranged to block any straight line path from the activation chamber to the silicon substrate; while passing the activated gas from the activation chamber past the at least one ultraviolet radiation absorbing surface and into contact with the layer of coating material to break down the coating material and strip it from the silicon substrate.
Claim 3
Dependent Claim 34 words
A method as defined in claim 1, wherein the coating is polymer photoresist and the gas is selected from a group consisting of O 2 , CF 4 , SF 6 and freon gas.
Claim 4
Dependent Claim 26 words
A method as defined in claim 1, wherein the gas is activated by application of a microwave or radio frequency electric field to generate a plasma.
Claim 5
Dependent Claim 17 words
A method as defined in claim 1, wherein the gas is activated by application of ultraviolet radiation.
Claim 6
Dependent Claim 36 words
A method as defined in claim 1, wherein the activated gas is drawn from the activation chamber past the at least one surface and into contact with the coating material by means of a pressure differential.

References Cited (Backward Citations)

US3879597A Cited
US4158589A Cited
US4358686A Cited
US4718976A Cited
US4540466A Cited
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US4631105A Cited
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US4673456A Cited
US4595484A Cited
US4718974A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-06-05 1992-12-05 1993-06-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-06-05 1996-12-05 1997-06-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-06-05 2000-12-05 2001-06-06 $7700.00 Window Closed / Lapsed

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