Patent US4851894A successfully refreshed from Google Patents.
US4851894A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for neutralizing the access to an integrated-circuit zone to be protected
Assignee: Eurotechnique SA
•
Filing: 1988-12-05
•
Granted: 1989-07-25
•
Expires: 2008-12-05
Abstract
Abstract A device for neutralizing the access to an integrated-circuit zone to be protected. A fuse section providing a connection between an access terminal and an integrated circuit zone to be protected is connected by means of the fuse end portion located nearest the zone to be protected to a junction obtained at the intersection of a layer of a conductivity type opposite to the conductivity type in which the substrate of the integrated circuit is formed. This junction is reverse-biased during normal utilization of the circuit and forward-biased only when it is desired to melt the fuse, thus making the zone to be protected irreversibly inaccessible.
Inventors
- 👤 Gerard S. de Ferron
- 👤 Jean Marie Gaultier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:21
CPC Classifications
G; G06; G06K; G06K19/00; G06K19/06; G06K19/067; G06K19/07; G06K19/073; G06K19/07309; G06K19/07372; H; H10; H10W; H10W42/00; Y; Y10; Y10S; Y10S257/00; Y10S257/922
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
217 words
A device for neutralizing an access to an integrated-circuit zone to be protected, said integrated circuit being formed on a semiconductor substrate of a first given conductivity type, of the type comprising a fuse section integrated in a circuit and placed in series between said access and the zone to be protected, wherein the end portion of the fuse section located nearest the zone to be protected is connected to said zone by being connected directly to a layer of a second given conductivity type forming with the substrate a junction which is reverse-biased at the time of normal utilization of said circuit and which is forward biased at the time of the melting of the fuse the fuse section being surmounted by a metallic portion which surrounds directly a hole of said fuse section and rests on said section, electrically independent from said fuse, by means of an insulating layer, so that any attempt to contact any remaining part of said fuse after melting with a probe will be prevented by contact of said probe with said metallic portion, short circuiting said probe and preventing access to said zone, said device further comprising means for passing the melting current of the fuse through said junction, said means for passing also connecting said substrate forwardly when melting.
Claim 2
Independent Claim
217 words
A device for neutralizing an access to an integrated-circuit zone to be protected, said integrated circuit being formed on a semiconductor substrate of a first given conductivity type, of the type comprising a fuse section integrated in a circuit and placed in series between said access and the zone to be protected, wherein the end portion of the fuse section located nearest the zone to be protected is connected to said zone by being connected directly to a layer of a second given conductivity type forming with the substrate a junction which is reverse-biased at the time of normal utilization of said circuit and which is forward biased at the time of the melting of the fuse the fuse section being surmounted by a metallic portion which surrounds directly a hole of said fuse section and rests on said section, electrically independent from said fuse, by means of an insulating layer, so that any attempt to contact any remaining part of said fuse after melting with a probe will be prevented by contact of said probe with said metallic portion, short circuiting said probe and preventing access to said zone, said device further comprising means for passing the melting current of the fuse through said junction, said means for passing also connecting said substrate forwardly when melting.
Claim 3
Dependent Claim
32 words
A device according claim 1, wherein said metallic portion is connected to a constant potential of the circuit in opposition to a rest potential of the layer of the second conductivity type.
Claim 4
Dependent Claim
28 words
A device according to claim 2, wherein the fuse section is open to free air by a hole in order to achieve improved melting of said fuse section.
Claim 5
Dependent Claim
23 words
A device according to claim 2, wherein the metallic portion is also connected to another metallic portion which is located above the junction.
Claim 6
Dependent Claim
14 words
A device according claim 4, wherein the fuse section is formed of polycrystalline silicon.
Claim 7
Dependent Claim
22 words
A device according to claim 5, wherein the fuse section has a width of 2.5 microns and a thickness of 0.5 micron.
Claim 8
Dependent Claim
20 words
A device according to claim 6, wherein the fuse section rests on a thick oxide layer formed above the substrate.
Claim 9
Dependent Claim
16 words
A device according to claim 6, wherein the fuse section rests on a silicon nitride layer.
Claim 10
Dependent Claim
18 words
A device according to claim 8, wherein the integrated circuit is fabricated in accordance with the MOS technology.
Claim 11
Dependent Claim
18 words
A device according to claim 9, wherein the integrated circuit is fabricated in accordance with the NMOS technology.
Claim 12
Dependent Claim
26 words
A device according to claim 10, wherein the integrated circuit is covered with a dielectric layer outside the portions which are left exposed to free air.
Claim 13
Dependent Claim
18 words
A device according to claim 2, wherein said substrate acts as a terminal of said fuse when melted.
Claim 14
Dependent Claim
22 words
A device according to claim 2, wherein said layer of a second given conductivity type extends into said zone to be protected.
References Cited (Backward Citations)
US4017888A
Cited
US4045310A
Cited
US4105156A
Cited
US4210875A
Cited
US4268911A
Cited
US4413272A
Cited
US4434361A
Cited
FR2503424A1
Cited
US4446475A
Cited
EP0076967A2
Cited
US4723155A
Cited
JPS5966144A
Cited
US4628590A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |