Patent US4855796A successfully refreshed from Google Patents.
US4855796A
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Beam lead mixer diode
Assignee: Raytheon Co
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Filing: 1986-06-06
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Granted: 1989-08-08
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Expires: 2006-06-06
Abstract
Abstract A beam lead diode configuration is described, employing a planar proton bombarded conversion region and a low-permittivity dielectric separator. The diode enjoys the mechanical ruggedness of the conventional planar diodes and the electrical performance of conventional mesa-type diodes. The diode structure results in the absence of N-type mesa structures on the substrate, allowing fabrication by relatively low-cost, high-yield photolithographic processes.
Inventors
- 👤 Wah S. Wong
- 👤 Cheng P. Wen
- 👤 Jen K. Kung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:43
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10D; H10D64/00; H10D64/20; H10D8/00; H10D8/01; H10D8/051; H10D8/60; H10W; H10W72/00; H10W72/60; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
252 words
A beam lead diode which comprises: a semi-insulating substrate; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second semi-insulating conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having at least two side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first semi-insulating conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a second metallization layer formed over a portion of said N layer adjacent said second semi-insulating conversion region, forming a Schottky contact; a dielectric separator piece located on a portion of said second semi-insulating conversion region under a portion of said second metallization layer adjacent said active diode region for increasing the separation between said Schottky contact and said N + layer in the region adjacent said second semi-insulating conversion region; and a second beam lead supported by said second semi-insulating conversion region and formed on said second metallization layer and spaced from the other side edge of said diode region to provide a second diode lead.
Claim 2
Dependent Claim
252 words
A beam lead diode which comprises: a semi-insulating substrate; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second semi-insulating conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having at least two side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first semi-insulating conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a second metallization layer formed over a portion of said N layer adjacent said second semi-insulating conversion region, forming a Schottky contact; a dielectric separator piece located on a portion of said second semi-insulating conversion region under a portion of said second metallization layer adjacent said active diode region for increasing the separation between said Schottky contact and said N + layer in the region adjacent said second semi-insulating conversion region; and a second beam lead supported by said second semi-insulating conversion region and formed on said second metallization layer and spaced from the other side edge of said diode region to provide a second diode lead.
Claim 3
Dependent Claim
27 words
The diode of claim 1 wherein said dielectric separator piece has a substantially rectangular shape across its lateral extent and is about 5 to 10 microns wide.
Claim 4
Dependent Claim
21 words
The diode of claim 2 wherein said dielectric separator piece is of a material having a dielectric permittivity less than six.
Claim 5
Dependent Claim
26 words
The diode of claim 3 wherein said dielectric separator piece material is silicon dioxide having a thickness in the range of 0.2 microns to 2.0 microns.
Claim 6
Dependent Claim
22 words
The diode of claim 2 wherein said dielectric separator piece overlaps said active region by a distance of one to two microns.
Claim 7
Dependent Claim
244 words
A beam lead diode characterized by a relatively high cutoff frequency and low parasitic reactance which comprises: a semi-insulating substrate layer; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a dielectric separator piece about 5 to 10 microns wide formed of low permittivity material over a portion of said second conversion region adjacent said diode region; a second metallization layer formed over a portion of said N layer adjacent said conversion region, said dielectric separator piece and said second conversion region to form a Schottky contact; and a second beam lead supported by said second conversion region and formed on said second metallization layer and spaced from the other side edge of said diode region to provide a second diode lead.
Claim 8
Dependent Claim
244 words
A beam lead diode characterized by a relatively high cutoff frequency and low parasitic reactance which comprises: a semi-insulating substrate layer; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a dielectric separator piece about 5 to 10 microns wide formed of low permittivity material over a portion of said second conversion region adjacent said diode region; a second metallization layer formed over a portion of said N layer adjacent said conversion region, said dielectric separator piece and said second conversion region to form a Schottky contact; and a second beam lead supported by said second conversion region and formed on said second metallization layer and spaced from the other side edge of said diode region to provide a second diode lead.
Claim 9
Dependent Claim
20 words
The diode of claim 6 wherein said dielectric separator piece comprises a material having a dielectric permittivity less than six.
Claim 10
Dependent Claim
27 words
The diode of claim 7 wherein said dielectric separator piece comprises a layer of silicon dioxide having a thickness in the range of 0.2 to 2.0 microns.
Claim 11
Dependent Claim
22 words
The diode of claim 7 wherein said dielectric separator piece extends over said diode region a distance of one to two microns.
Claim 12
Dependent Claim
289 words
a beam lead diode which comprises: a semi-insulating substrate; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second semi-insulating conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first semi-insulating conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a second metallization layer formed over a portion of said N layer adjacent said second semi-insulating conversion region and over said second conversion region, forming a Schottky contact; a dielectric separator piece having a substantially rectangular lateral cross-sectional shape located on a portion of said second semi-insulating region under a portion of said second metallization layer and overlapping said active diode region by a distance of one to two microns for increasing the separation between said Schottky contact and said N + layer in the region adjacent said second semi-insulating conversion region thereby reducing the parasitic reactance between said second metallization layer and said N + layer comprising said active diode region; and a second beam lead supported by said second semi-insulating conversion region and formed on said second metallization layer and spaced from the other edge of said diode region to provide a second diode lead.
Claim 13
Dependent Claim
289 words
a beam lead diode which comprises: a semi-insulating substrate; an N + layer heavily doped with N impurities to achieve a conductive layer on said substrate layer; an N layer formed on said N + layer; first and second semi-insulating conversion regions formed in said N + and N layers by proton bombardment of said layers, defining a diode region of said N + and N layers having side edges between said conversion regions; an ohmic contact formed on a first portion of said diode region adjacent said first conversion region; a first metallization layer formed over a portion of said ohmic contact and said first conversion region; a first beam lead supported by said first semi-insulating conversion region and formed on said first metallization layer and spaced from one side edge of said diode region to provide a first diode lead; a second metallization layer formed over a portion of said N layer adjacent said second semi-insulating conversion region and over said second conversion region, forming a Schottky contact; a dielectric separator piece having a substantially rectangular lateral cross-sectional shape located on a portion of said second semi-insulating region under a portion of said second metallization layer and overlapping said active diode region by a distance of one to two microns for increasing the separation between said Schottky contact and said N + layer in the region adjacent said second semi-insulating conversion region thereby reducing the parasitic reactance between said second metallization layer and said N + layer comprising said active diode region; and a second beam lead supported by said second semi-insulating conversion region and formed on said second metallization layer and spaced from the other edge of said diode region to provide a second diode lead.
Claim 14
Dependent Claim
17 words
The diode of claim 10 wherein said dielectric separator piece is about 5 to 10 microns wide.
Claim 15
Dependent Claim
17 words
The diode of claim 11 wherein said dielectric separator piece is about 0.2 to 2 microns thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-07 | 1993-02-06 | 1993-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-07 | 1997-02-06 | 1997-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-07 | 2001-02-06 | 2001-08-08 | $7700.00 | Window Closed / Lapsed |