Method of fabricating a semiconductor beam lead device

Claim 1

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, and supporting the semiconductor device and removing the back side of the semiconductor substrate to within a predetermined distance of the frame.

Claim 2

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, and supporting the semiconductor device and removing the back side of the semiconductor substrate to within a predetermined distance of the frame.

Claim 9

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, the metallization step forming separate beam leads, one including a conductive finger for making ohmic contact and adapted to space one of the beam leads from the remaining substrate area, providing an air gap under the conductive finger for reducing parasitic capacitance.

Claim 10

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, the metallization step forming separate beam leads, one including a conductive finger for making ohmic contact and adapted to space one of the beam leads from the remaining substrate area, providing an air gap under the conductive finger for reducing parasitic capacitance.

Claim 11

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, and depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, wherein the step of defining the cavity includes depositing a mask layer, defining a window in the mask layer corresponding to the desired cavity frame, and etching the semiconductor substrate to form a multisided frame cavity, and wherein the step of depositing the polysilicon include depositing the polysilicon in the multisided frame cavity and removing a portion thereof to form a like polysilicon frame for structural support.

Claim 12

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, and depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, wherein the step of defining the cavity includes depositing a mask layer, defining a window in the mask layer corresponding to the desired cavity frame, and etching the semiconductor substrate to form a multisided frame cavity, and wherein the step of depositing the polysilicon include depositing the polysilicon in the multisided frame cavity and removing a portion thereof to form a like polysilicon frame for structural support.

Claim 21

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, depositing a silicon dioxide layer over the epitaxy layer, and defining windows through both the epitaxy layer and the silicon dioxide layer, removing the silicon dioxide layer and redepositing the layer over the epitaxy layer, a pair of windows through the silicon dioxide layer that forms the second insulating layer for enabling ohmic contact with the epitaxy layer and substrate, respectively. applying a photoresist to a portion of the silicon dioxide layer for subsequent removal to define an air gap below one of the conductor leads.

Claim 22

A method of fabricating a semiconductor device comprising the steps of; providing a semiconductor substrate, defining a cavity in the substrate that extends in a multisided frame pattern, depositing a layer of polysilicon in the cavity to substantially fill the cavity and provide structural support, forming an epitaxy layer over the surface of the substrate, forming a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively, depositing metallization to form separate conductor leads to provide ohmic contact to the epitaxy layer and substrate, depositing a silicon dioxide layer over the epitaxy layer, and defining windows through both the epitaxy layer and the silicon dioxide layer, removing the silicon dioxide layer and redepositing the layer over the epitaxy layer, a pair of windows through the silicon dioxide layer that forms the second insulating layer for enabling ohmic contact with the epitaxy layer and substrate, respectively. applying a photoresist to a portion of the silicon dioxide layer for subsequent removal to define an air gap below one of the conductor leads.