US4865684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a semiconductor laser mirror by ionic machining
Assignee: Individual
•
Filing: 1988-02-12
•
Granted: 1989-09-12
•
Expires: 2008-02-12
Abstract
Abstract A semiconductor (10) is subject to ionic etching (14) through a mask, whereof one side determines the location of the mirror. This mask is constituted by a crystalline layer (12), whereof the side (16) is a crystallographic plane.
Inventors
- 👤 Noureddine Bouadma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:49
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
80 words
Process for producing a semiconductor laser mirror in a planar semiconductor structure, comprising the steps of: forming a single crystalline layer by epitaxy on said semiconductor structure, said single crystalline layer having crystallographic planes; chemically etching said single crystalline layer along a crystallographic plane perpendicular to the plane of the semiconductor structure; carrying out an ionic etching of said semiconductor structure in a direction inclined with respect to said crystallographic plane through said single crystalline layer acting as a mask.
Claim 2
Dependent Claim
80 words
Process for producing a semiconductor laser mirror in a planar semiconductor structure, comprising the steps of: forming a single crystalline layer by epitaxy on said semiconductor structure, said single crystalline layer having crystallographic planes; chemically etching said single crystalline layer along a crystallographic plane perpendicular to the plane of the semiconductor structure; carrying out an ionic etching of said semiconductor structure in a direction inclined with respect to said crystallographic plane through said single crystalline layer acting as a mask.
Claim 3
Dependent Claim
84 words
Process for producing a semiconductor laser mirror in a planar semiconductor structure, comprising the steps of: forming a strip of a single crystalline material, said strip having at least one cleaved face which is a crystallographic plane; bonding said strip to the semiconductor structure so that said crystallographic plane is perpendicular to the plane of the semiconductor structure; carrying out an ionic etching of said semiconductor structure in a direction inclined with respect to said crystallographic plane through said strip acting as a mask.
Claim 4
Dependent Claim
84 words
Process for producing a semiconductor laser mirror in a planar semiconductor structure, comprising the steps of: forming a strip of a single crystalline material, said strip having at least one cleaved face which is a crystallographic plane; bonding said strip to the semiconductor structure so that said crystallographic plane is perpendicular to the plane of the semiconductor structure; carrying out an ionic etching of said semiconductor structure in a direction inclined with respect to said crystallographic plane through said strip acting as a mask.
References Cited (Backward Citations)
US4248688A
Cited
US4354898A
Cited
EP0073548A1
Cited
DE3138704A1
Cited
US4547956A
Cited
US4397711A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |