Patent US4872050A successfully refreshed from Google Patents.
US4872050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnection structure in semiconductor device and manufacturing method of the same
Assignee: Mitsubishi Electric Corp
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Filing: 1988-03-15
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Granted: 1989-10-03
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Expires: 2008-03-15
Abstract
Abstract Conductive layers (5a, 9a) included in a multi-layer structure (30a) are electrically interconnected through a conductive connection wall (13a) provided in a contact hole (12) and contacting the side surface (22) of the multi-layer structure (30a). The upper conductive layer (11a) existing on the multi-layer structure (30a) and the lower conductive layer (3) exisitng under the multi-layer structure (30a) are electrically interconnected through a conductive film (11b) provided in the contact hole (12). These two interconnections are insulated from each other by an insulating film (18) provided on the connection wall (13a).
Inventors
- 👤 Tatsuo Okamoto
- 👤 Hideo Kotani
- 👤 Takio Oono
- 👤 Kiyoto Watabe
- 👤 Yasushi Kinoshita
- 👤 Yoshikazu Nishikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/083; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
312 words
A semiconductor device comprising: (a) a substrate; (b) a first conductive layer provided on an upper surface of said substrate and connected to an internal circuit formed in an arbitrary region on said substrate; (c) a first insulating layer formed on an upper surface of said first conductive layer and having a window; (d) a multi-layer structure provided on an upper surface of said first insulating layer and having; (d-1) second conductive layers provided in parallel direction to said upper surface of said substrate and connected respectively to internal circuits formed in an arbitrary region on said substrate; (d-2) at least one second insulating layer inserted between said second conductive layers for insulating said second conductive layers from each other; and (d-3) a third insulating layer provided in a top of said multi-layer structure; where said multi-layer structure being provided with a contact hole communicating to said window, and a side surface of said contact hole is defined by a side surface of said multi-layer structure; (e) a third conductive layer provided on an upper surface of said multi-layer structure and connected to an internal circuit formed in an arbitrary region on said substrate; (f) a side wall provided in said contact hole to cover said side surface of said multi-layer structure while leaving said contact hole open and having a side conductive layer that interconnects at least two of said second conductive layers and an insulating film provided at least on a surface region of said side wall which faces to a center of said contact hole; and (g) a connection film provided in said contact hole contacting said first conductive layer through said window and connected to said third conductive layer on said contact hole thereby to electrically interconnect said first and third conductive layers, said connection film being electrically insulated from said second conductive layers by said side wall.
Claim 2
Dependent Claim
312 words
A semiconductor device comprising: (a) a substrate; (b) a first conductive layer provided on an upper surface of said substrate and connected to an internal circuit formed in an arbitrary region on said substrate; (c) a first insulating layer formed on an upper surface of said first conductive layer and having a window; (d) a multi-layer structure provided on an upper surface of said first insulating layer and having; (d-1) second conductive layers provided in parallel direction to said upper surface of said substrate and connected respectively to internal circuits formed in an arbitrary region on said substrate; (d-2) at least one second insulating layer inserted between said second conductive layers for insulating said second conductive layers from each other; and (d-3) a third insulating layer provided in a top of said multi-layer structure; where said multi-layer structure being provided with a contact hole communicating to said window, and a side surface of said contact hole is defined by a side surface of said multi-layer structure; (e) a third conductive layer provided on an upper surface of said multi-layer structure and connected to an internal circuit formed in an arbitrary region on said substrate; (f) a side wall provided in said contact hole to cover said side surface of said multi-layer structure while leaving said contact hole open and having a side conductive layer that interconnects at least two of said second conductive layers and an insulating film provided at least on a surface region of said side wall which faces to a center of said contact hole; and (g) a connection film provided in said contact hole contacting said first conductive layer through said window and connected to said third conductive layer on said contact hole thereby to electrically interconnect said first and third conductive layers, said connection film being electrically insulated from said second conductive layers by said side wall.
Claim 3
Dependent Claim
79 words
A semiconductor device in accordance with claim 1, wherein a width of said contact hole is greater than a width of said window, whereby a part of said first insulating layer surrounding said window is not provided with said multi-layer structure thereon, and said side wall contacts a surface of said part of said first insulating layer, whereby said part of said first insulating layer functions as a spacer region between said side wall and said first conductive layer.
Claim 4
Dependent Claim
39 words
A semiconductor device in accordance with claim 2, wherein said side wall further comprises a conductive wall on which said insulating film is provided, and said second layers are electrically interconnected in a vertical direction through said conductive wall.
Claim 5
Dependent Claim
54 words
A semiconductor device in accordance with claim 3, wherein said side wall has a vertical cross section of substantial triangle form having an arc oblique side which defines a surface of said side wall facing said center of said contact hole and a bottom side existing on said part of said first insulating layer.
Claim 6
Dependent Claim
39 words
A semiconductor device in accordance with claim 4, wherein said substrate is a semiconductor substrate, and said first conductive layer is provided on an upper surface of a fourth insulating layer formed on said upper surface of said substrate.
Claim 7
Dependent Claim
25 words
A semiconductor device in accordance with claim 5, wherein said third conductive layer and said connection film are parts of a single conductive layer, respectively.
Claim 8
Dependent Claim
294 words
A semiconductor device comprising: (a) a first conductive layer, (b) a first insulating layer formed on an upper surface of said first conductive layer and having a first window, (c) a second conductive layer formed on an upper surface of said first insulating layer and having a second window located at said first window of said first insulating layer, (d) a second insulating layer formed on an upper surface of said second conductive layer and having a third window located at said second window of said second conductive layer, the width of said third window being the same as that of said second window, (e) a third conductive layer formed on an upper surface of said second insulating layer and having a fourth window located at said third window of said second insulating layer, the width of said fourth window being the same as that of said third window, (f) a third insulating layer formed on an upper surface of said third conductive layer and having a fifth window located at said fourth window, (g) a side conductive layer formed on the side end of said second conductive layer exposed at said second window, the side end of said second insulating layer exposed at said third window, and the side end of said third conductive layer exposed at the fourth window, and electrically interconnecting said second and third conductive layer, (h) a side insulating layer formed on a surface of said side conductive layer, and (i) a fourth conductive layer formed on an upper surface of said third insulating layer, a surface of said side insulating layer, and the exposed surface of said first conductive layer located at said first window of said first insulating layer, and electrically connected to said first conductive layer.
Claim 9
Dependent Claim
294 words
A semiconductor device comprising: (a) a first conductive layer, (b) a first insulating layer formed on an upper surface of said first conductive layer and having a first window, (c) a second conductive layer formed on an upper surface of said first insulating layer and having a second window located at said first window of said first insulating layer, (d) a second insulating layer formed on an upper surface of said second conductive layer and having a third window located at said second window of said second conductive layer, the width of said third window being the same as that of said second window, (e) a third conductive layer formed on an upper surface of said second insulating layer and having a fourth window located at said third window of said second insulating layer, the width of said fourth window being the same as that of said third window, (f) a third insulating layer formed on an upper surface of said third conductive layer and having a fifth window located at said fourth window, (g) a side conductive layer formed on the side end of said second conductive layer exposed at said second window, the side end of said second insulating layer exposed at said third window, and the side end of said third conductive layer exposed at the fourth window, and electrically interconnecting said second and third conductive layer, (h) a side insulating layer formed on a surface of said side conductive layer, and (i) a fourth conductive layer formed on an upper surface of said third insulating layer, a surface of said side insulating layer, and the exposed surface of said first conductive layer located at said first window of said first insulating layer, and electrically connected to said first conductive layer.
Claim 10
Dependent Claim
45 words
A semiconductor device in accordance with claim 11, wherein the width of said first window is smaller than that of said second window, and the bottom surface of said side conductive layer touches the upper surface of said first insulating layer within said second window.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-02 | 1993-04-03 | 1993-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-02 | 1997-04-03 | 1997-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-02 | 2001-04-03 | 2001-10-03 | $7700.00 | Window Closed / Lapsed |