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US4872944A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for the control in real time of the selectivity of the etching by analysis of the plasma gases in a process of reactive ionic etching and a reactor therefore

Assignee: LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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Filing: 1988-08-17
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Granted: 1989-10-10
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Expires: 2008-08-17
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Abstract

Abstract The present invention concerns a process for the control in real time of the etching in a process for manufacturing electronic components of the type obtained by reacting ionic etching of wafers of silicon utilizing a plasma produced between two electrodes, wherein the gaseous species of the plasma are analyzed during the etching, at least one of the wafers of silicon being removable in situ from the influence of the plasma. The invention also concerns a reactor therefore, comprising a housing under vacuum 31 including at least one support electrode 34 and one electrode 35 connected to ground between which a plasma is produced, means for producing a vacuum, means for loading and unloading wafers, means for introducing etching gas, wherein the reactor comprises at least two locations 40 for wafers 33, means for withdrawing at least one location from the influence of the plasma 37, said means and the locations being movable with respect to one another, and means for analyzing gaseous species of the plasma.

Inventors

  • 👤 Denis Rufin
  • 👤 Ikuo Hirase

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 23:53
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32917; H01J37/32935

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 60 words
Process for the control in real time of etching in a process of manufacturing electronic components obtained by reactive ionic etching of silicon wafers utilizing a plasma produced between two electrodes, wherein the gaseous species of the plasma are analyzed during the etching, at least one of the silicon wafers being withdrawable in situ from the influence of the plasma.
Claim 2
Dependent Claim 60 words
Process for the control in real time of etching in a process of manufacturing electronic components obtained by reactive ionic etching of silicon wafers utilizing a plasma produced between two electrodes, wherein the gaseous species of the plasma are analyzed during the etching, at least one of the silicon wafers being withdrawable in situ from the influence of the plasma.
Claim 3
Dependent Claim 24 words
Process according to claim 1, whrein said wafer is withdrawn from the influence of the plasma by placing a screen between the two electrodes.
Claim 4
Dependent Claim 18 words
Process according to claim 2, wherein the screen and the wafers are movable with respect to one another.
Claim 5
Dependent Claim 96 words
Reactor for the reactive ionic etching of silicon wafers, said reactor including a vacuum housing comprising a support-electrode (34) connected to a generator and an electrode (35) connected to ground between which a plasma is produced, vacuum means, means for loading and unloading wafers, means for introducing etching gas, wherein said reactor comprises at least two locations (40) for wafer (33), means for withdrawing at least one location from the influence of the plasma (37), said means and said locations being movable with respect to one another, and means for analyzing gaseous species of the plasma.
Claim 6
Dependent Claim 96 words
Reactor for the reactive ionic etching of silicon wafers, said reactor including a vacuum housing comprising a support-electrode (34) connected to a generator and an electrode (35) connected to ground between which a plasma is produced, vacuum means, means for loading and unloading wafers, means for introducing etching gas, wherein said reactor comprises at least two locations (40) for wafer (33), means for withdrawing at least one location from the influence of the plasma (37), said means and said locations being movable with respect to one another, and means for analyzing gaseous species of the plasma.
Claim 7
Dependent Claim 14 words
Reactor according to claim 4, wherein said withdrawing means comprise at least one screen.
Claim 8
Dependent Claim 15 words
Reactor according to claim 4 or 5, wherein the screen is made of aluminum alloy.
Claim 9
Dependent Claim 17 words
Reactor according to claim 4 or 5 to wherein the screen is 1 mm from the wafers.
Claim 10
Dependent Claim 19 words
Reactor according to claim 4 or 5 to which comprises means for moving the support-electrode, such as by rotation.
Claim 11
Dependent Claim 15 words
Reactor according to claim 4 or 5 to which comprises means for moving the screen.

References Cited (Backward Citations)

US4718975A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-10-09 1993-04-10 1993-10-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-10-09 1997-04-10 1997-10-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-10-09 2001-04-10 2001-10-10 $7700.00 Window Closed / Lapsed

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