Dynamic random access memory having storage gate electrode grounding means

Claim 2

A dynamic random access memory device provided on a semiconductor substrate, comprising: a memory cell including a capacitor for storing electric charges as information, said capacitor having a storage gate electrode to which a potential other than a ground potential is applied when said device is in normal operation; a peripheral circuit including a CMOS circuit; and grounding means responsive to the voltage appearing at a power supply connection, and including switching means for applying the ground potential to said storage gate electrode only in a predetermined period immediately after a start of application of a power supply voltage to said device.

Claim 3

A dynamics random access memory device in accordance with claim 1, wherein said grounding means includes switching means for selectively applying either the potential other than the ground potential or the ground potential to said storage gate electrode responsive to a power-on-reset signal.

Claim 6

A dynamic random access memory device including a plurality of MOS transistors of a second channel type formed on a major surface of a semiconductor substrate of a first conductivity type and a plurality of MOS transistors of a first channel type formed on a well of a second conductivity type provided on said major surface, comprising: a memory cell including a capacitor connected electrically with one of said MOS transistors of the second channel type, said capacitor including a storage gate electrode formed on said major surface with an intervening insulator; a voltage generating means formed on said major surface for generating voltage output between a power supply voltage and a ground potential; and grounding means for applying the ground potential to said storage gate electrode only in a predetermined period immediately after a start of application of said power supply voltage and for applying the voltage output of said voltage generating means to said storage gate electrode immediately after said predetermined period; wherein said grounding means is formed on said semiconductor substrate and comprises: power-on-reset means for generating a power-on-reset signal which is higher than a predetermined potential in the predetermined period immediately after the start of application of said power supply voltage and lower than a predetermined potential thereafter; a first switching means connected to said power-on-reset means and also connected between said ground potential and said storage gate electrode, for applying said ground potential to said storage gate electrode when receiving said power-on-reset signal which is higher than said predetermined potential; and a second switching means connected to said power-on-reset means and also connected between said voltage generating means and said storage electrode, for applying the output of said voltage generating means to said storage electrode when receiving said power-on-reset signal which is lower than said predetermined potential.

Claim 7

A dynamic random access memory device including a plurality of MOS transistors of a second channel type formed on a major surface of a semiconductor substrate of a first conductivity type and a plurality of MOS transistors of a first channel type formed on a well of a second conductivity type provided on said major surface, comprising: a memory cell including a capacitor connected electrically with one of said MOS transistors of the second channel type, said capacitor including a storage gate electrode formed on said major surface with an intervening insulator; a voltage generating means formed on said major surface for generating voltage output between a power supply voltage and a ground potential; and grounding means for applying the ground potential to said storage gate electrode only in a predetermined period immediately after a start of application of said power supply voltage and for applying the voltage output of said voltage generating means to said storage gate electrode immediately after said predetermined period; wherein said grounding means is formed on said semiconductor substrate and comprises: power-on-reset means for generating a power-on-reset signal which is higher than a predetermined potential in the predetermined period immediately after the start of application of said power supply voltage and lower than a predetermined potential thereafter; a first switching means connected to said power-on-reset means and also connected between said ground potential and said storage gate electrode, for applying said ground potential to said storage gate electrode when receiving said power-on-reset signal which is higher than said predetermined potential; and a second switching means connected to said power-on-reset means and also connected between said voltage generating means and said storage electrode, for applying the output of said voltage generating means to said storage electrode when receiving said power-on-reset signal which is lower than said predetermined potential.

Claim 8

A dynamic random access memory device in accordance with claim 4, wherein said first switching means comprises one of said MOS transistors of the second channel type, and said second switching means comprises one of said MOS transistors of the first channel type.