Patent US4888088A successfully refreshed from Google Patents.
US4888088A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ignitor for a microwave sustained plasma
Assignee: Motorola Solutions Inc
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Filing: 1989-03-06
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Granted: 1989-12-19
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Expires: 2009-03-06
Abstract
Abstract A high frequency, high voltage is capacitively applied to a process gas through a quartz tube to ignite a glow discharge within the tube. The quartz tube runs through a microwave cavity and the ignitor is positioned upstream of the cavity. The cavity is tuned for a steady state glow discharge and is not changed during initiation of the plasma. The ignitor excites the process gas into active species and the gas flow takes the species through the cavity where the microwave energy brings the gas to an ionized state and the plasma is sustained.
Inventors
- 👤 Harry Slomowitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:45
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; H05; H05H; H05H1/00; H05H1/24; H05H1/46
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
50 words
A method for providing a plasma glow discharge in a plasma reactor containing one or more process gases for treating a semiconductor wafer comprising the steps of: applying high frequency RF energy to said gas to initiate said plasma; and applying microwave energy to said gas to sustain said plasma.
Claim 2
Independent Claim
50 words
A method for providing a plasma glow discharge in a plasma reactor containing one or more process gases for treating a semiconductor wafer comprising the steps of: applying high frequency RF energy to said gas to initiate said plasma; and applying microwave energy to said gas to sustain said plasma.
Claim 3
Dependent Claim
26 words
The method as set forth in claim 1 and further comprising the step of: terminating said high frequency RF energy after said microwave energy is applied.
Claim 4
Dependent Claim
26 words
The method as set forth in claim 2 wherein said high frequency RF energy is applied by capacitive coupling through a non-conductive container for said gas.
Claim 5
Dependent Claim
115 words
In apparatus for treating a semiconductor wafer using gases activated by microwave energy, said apparatus having a source of one or more gases, a non-conductive conduit for said gases; a first chamber enclosing a portion of said conduit and through which microwave energy is coupled to form a plasma in said gases, a second chamber into which said gases flow and which contains said semiconductor wafer, ignitor means located upstream of said first chamber for establishing a plasma in said first chamber, and microwave means coupled to said first chamber for sustaining said plasma, wherein the improvement comprises: said ignitor means comprises means for coupling RF energy to said gases for causing a plasma therein.
Claim 6
Dependent Claim
115 words
In apparatus for treating a semiconductor wafer using gases activated by microwave energy, said apparatus having a source of one or more gases, a non-conductive conduit for said gases; a first chamber enclosing a portion of said conduit and through which microwave energy is coupled to form a plasma in said gases, a second chamber into which said gases flow and which contains said semiconductor wafer, ignitor means located upstream of said first chamber for establishing a plasma in said first chamber, and microwave means coupled to said first chamber for sustaining said plasma, wherein the improvement comprises: said ignitor means comprises means for coupling RF energy to said gases for causing a plasma therein.
Claim 7
Dependent Claim
30 words
The apparatus as set forth in claim 4 wherein said ignitor means comprises: means for generating a high voltage, RF signal; and means for coupling said signal to said conduit.
Claim 8
Dependent Claim
34 words
The apparatus as set forth in claim 5 wherein said means for coupling comprises: capacitor plates conforming approximately to the outside shape of said conduit for coupling said RF signal to within said conduit.
Claim 9
Dependent Claim
21 words
The apparatus as set forth in claim 6 wherein said RF signal has a frequency of approximately 1 Mhz or greater.
Claim 10
Dependent Claim
13 words
The apparatus as set forth in claim 5 wherein said conduit comprises quartz.
Claim 11
Dependent Claim
13 words
The apparatus as set forth in claim 5 wherein said conduit comprises ceramic.
Claim 12
Dependent Claim
58 words
The apparatus as set forth in claim 6 wherein said means for generating comprises: a source of RF signal; a step-up transformer having the secondary winding thereof connected to said plates; and an amplifier having the input thereof connected to said source of RF signal and the output thereof connected to the primary winding of said step-up transformer.
Claim 13
Dependent Claim
25 words
The apparatus as set forth in claim 10 and further comprising: tuning means connected to said primary winding for minimizing the reactance of said winding.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-18 | 1993-06-19 | 1993-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-18 | 1997-06-19 | 1997-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-18 | 2001-06-19 | 2001-12-19 | $7700.00 | Window Closed / Lapsed |