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US4890145A
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US
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dRAM cell and array
Assignee: Texas Instruments Inc
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Filing: 1989-02-27
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Granted: 1989-12-26
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Expires: 2009-02-27
Abstract
Abstract A dRAM cell and array of cells, together with a method of fabrication, are disclosed wherein the cell includes one field effect transistor and one capacitor with both the transistor and the capacitor formed in a trench in a substrate. One capacitor plate and the transistor source are common and are formed in the lower portion of the trench sidewall. The transistor drain is formed in the upper portion of the trench sidewall to connect to a bit line on the substrate surface, and the channel is the vertical portion of the trench sidewall between the source and drain. The transistor gate fills the upper portion of the trench, and a heavily doped other plate of the capacitor fills the lower portion of the trench and makes contact with the substrate through the bottom of the trench.
Inventors
- 👤 Satwinder S. Malhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:12
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
135 words
A memory cell comprising: a substrate having a trench formed therein; an insulating layer formed on the sidewalls of said trench; a drain region formed in said substrate at the intersection between said trench and the surface of said substrate; a doped storage region of opposite conductivity type of said substrate formed in said substrate adjacent to said insulating layer separated from said drain region by a channel region; a region of conductive material formed in the bottom of said trench adjacent to said insulating layer, separated from said storage region by said insulating layer, said conductive material being in conductive contact with said substrate at a surface of said trench; and a gate formed in said trench adjacent to but insulated from said channel region and vertically disposed above said region of conductive material.
Claim 2
Dependent Claim
135 words
A memory cell comprising: a substrate having a trench formed therein; an insulating layer formed on the sidewalls of said trench; a drain region formed in said substrate at the intersection between said trench and the surface of said substrate; a doped storage region of opposite conductivity type of said substrate formed in said substrate adjacent to said insulating layer separated from said drain region by a channel region; a region of conductive material formed in the bottom of said trench adjacent to said insulating layer, separated from said storage region by said insulating layer, said conductive material being in conductive contact with said substrate at a surface of said trench; and a gate formed in said trench adjacent to but insulated from said channel region and vertically disposed above said region of conductive material.
Claim 3
Dependent Claim
31 words
A memory cell as in claim 1 wherein said insulating layer comprises a composite dielectric including at least one layer of silicon nitride and at least one layer of silicon dioxide.
Claim 4
Dependent Claim
163 words
A memory array comprising: a substrate having a plurality of trenches formed therein; a plurality of memory cells formed in said trenches, each of said memory cells formed in one of said trenches and each of said cells including: an insulating layer formed on the sidewalls of said trench; a drain region formed in said substrate at the intersection between said trench and the surface of said substrate; a doped storage region of opposite conductivity type of said substrate formed in said substrate adjacent to said insulating layer separated from said drain region by a channel region; a region of conductive material formed in the bottom of said trench adjacent to said insulating layer, separated from said storage region by said insulating layer, said conductive material being in conductive contact with said substrate at a surface of said trench; and a gate formed in said trench adjacent to but insulated from said channel region and vertically disposed above said region of conductive material.
Claim 5
Dependent Claim
163 words
A memory array comprising: a substrate having a plurality of trenches formed therein; a plurality of memory cells formed in said trenches, each of said memory cells formed in one of said trenches and each of said cells including: an insulating layer formed on the sidewalls of said trench; a drain region formed in said substrate at the intersection between said trench and the surface of said substrate; a doped storage region of opposite conductivity type of said substrate formed in said substrate adjacent to said insulating layer separated from said drain region by a channel region; a region of conductive material formed in the bottom of said trench adjacent to said insulating layer, separated from said storage region by said insulating layer, said conductive material being in conductive contact with said substrate at a surface of said trench; and a gate formed in said trench adjacent to but insulated from said channel region and vertically disposed above said region of conductive material.
Claim 6
Dependent Claim
31 words
A memory array as in claim 3 wherein said insulating layer comprises a composite dielectric including at least one layer of silicon nitride and at least one layer of silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-25 | 1993-06-26 | 1993-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-25 | 1997-06-26 | 1997-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-25 | 2001-06-26 | 2001-12-26 | $7700.00 | Window Closed / Lapsed |