Patent US4914742A successfully refreshed from Google Patents.
US4914742A
Expired / Lapsed
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Thin film orthogonal microsensor for air flow and method
Assignee: Honeywell Inc
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Filing: 1987-12-07
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Granted: 1990-04-03
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Expires: 2007-12-07
Abstract
Abstract A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.
Inventors
- 👤 Robert E. Higashi
- 👤 James O. Holmen
- 👤 Steven D. James
- 👤 Robert G. Johnson
- 👤 Jeffrey A. Ridley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:57
CPC Classifications
G; G01; G01F; G01F1/00; G01F1/68; G01F1/684; G01F1/6845; H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H01; H01H; H01H1/00; H01H1/0036; H01H2001/0089; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
206 words
An intermediate structure formed in the fabrication process of a thin film microsensor for airflow comprising: a single crystal (100) silicon wafer having a (100) planar surface and having a <110> direction lying in said (100) planar surface; a sacrifical thin film layer of aluminum on said (100) planar surface, said aluminum having a thickness of about 400 angstroms, said aluminum being delineated in a rectangular shape having edges one of said edges of the aluminum rectangle being oriented substantially orthogonally to the <110> direction; a thin film layer of silicon nitride on the aluminum and the remainder of the silicon surface; a thin film resistive heater element on said silicon nitride layer and centered over said aluminum layer; first and second thin film resistive flow detector elements on said silicon nitride layer, one one each side of said heater element, said detector elements being located over said aluminum layer; another thin film layer of silicon nitride over said heater and detector elements and the earlier mentioned silicon nitride layer; a plurality of narrow slots formed through said silicon nitride to said aluminum, said slots being positioned to be near but spaced from the edges of the aluminum and also positioned away from said heater element.
Claim 2
Dependent Claim
206 words
An intermediate structure formed in the fabrication process of a thin film microsensor for airflow comprising: a single crystal (100) silicon wafer having a (100) planar surface and having a <110> direction lying in said (100) planar surface; a sacrifical thin film layer of aluminum on said (100) planar surface, said aluminum having a thickness of about 400 angstroms, said aluminum being delineated in a rectangular shape having edges one of said edges of the aluminum rectangle being oriented substantially orthogonally to the <110> direction; a thin film layer of silicon nitride on the aluminum and the remainder of the silicon surface; a thin film resistive heater element on said silicon nitride layer and centered over said aluminum layer; first and second thin film resistive flow detector elements on said silicon nitride layer, one one each side of said heater element, said detector elements being located over said aluminum layer; another thin film layer of silicon nitride over said heater and detector elements and the earlier mentioned silicon nitride layer; a plurality of narrow slots formed through said silicon nitride to said aluminum, said slots being positioned to be near but spaced from the edges of the aluminum and also positioned away from said heater element.
Claim 3
Dependent Claim
24 words
The structure according to claim 1 in which the delineated aluminum is in the shape of a square about 325 microns on a side.
Claim 4
Dependent Claim
23 words
The structure according to claim 1 in which each of the silicon nitride layers is in the range of 2000-7000 angstroms in thickness.
Claim 5
Dependent Claim
20 words
The structure according to claim 3 in which each of the silicon nitride layers is about 5000 angstroms in thickness.
Claim 6
Dependent Claim
19 words
The structure according to claim 1 in which said narrow slots are in the range of 2-4 microns wide.
Claim 7
Dependent Claim
19 words
The structure according to claim 1 in which said aluminum is on the order of 400 angstroms in thickness.
Claim 8
Dependent Claim
206 words
An intermediate structure formed in the fabrication process of a thin film microsensor for airflow comprising: a single crystal (100) silicon wafer having a (100) planar surface and having a <110> direction lying in said (100) planar surface; a sacrifical thin film layer of aluminum on said (100) planar surface, said aluminum having a thickness of about 400 angstroms, said aluminum being delineated in a rectangular shape having edges, one of said edges of the aluminum rectangle being oriented substantially orthogonally to the <100> direction; a thin film layer of silicon nitride on the aluminum and the remainder of the silicon surface; a thin film resistive heater element on said silicon nitride layer and centered over said aluminum layer; first and second thin film resistive flow detector elements on said silicon nitride layer, one one each side of said heater element, said detector elements being located over said aluminum layer; another thin film layer of silicon nitride over said heater and detector elements and the earlier mentioned silicon nitride layer; a plurality of narrow slots formed through said silicon nitride to said aluminum, said slots being positioned to be near but spaced from the edges of the aluminum and also positioned away from said heater element.
Claim 9
Dependent Claim
206 words
An intermediate structure formed in the fabrication process of a thin film microsensor for airflow comprising: a single crystal (100) silicon wafer having a (100) planar surface and having a <110> direction lying in said (100) planar surface; a sacrifical thin film layer of aluminum on said (100) planar surface, said aluminum having a thickness of about 400 angstroms, said aluminum being delineated in a rectangular shape having edges, one of said edges of the aluminum rectangle being oriented substantially orthogonally to the <100> direction; a thin film layer of silicon nitride on the aluminum and the remainder of the silicon surface; a thin film resistive heater element on said silicon nitride layer and centered over said aluminum layer; first and second thin film resistive flow detector elements on said silicon nitride layer, one one each side of said heater element, said detector elements being located over said aluminum layer; another thin film layer of silicon nitride over said heater and detector elements and the earlier mentioned silicon nitride layer; a plurality of narrow slots formed through said silicon nitride to said aluminum, said slots being positioned to be near but spaced from the edges of the aluminum and also positioned away from said heater element.
References Cited (Backward Citations)
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