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US4927786A
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Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate
Assignee: Canon Inc
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Filing: 1989-10-20
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Granted: 1990-05-22
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Expires: 2009-10-20
Abstract
Abstract Disclosed herein is a process for forming a silicon-containing semiconductor thin film, said process comprising the steps of causing a film-forming raw material gas containing silicon atoms as the conventional atoms in the molecule to be adsorbed in liquid form on the cooled substrate surface and subsequently causing the liquefied film-forming raw material gas to react with chemically active hydrogen atoms, thereby solidifying the silicon-containing material and forming a thin film on the substrate surface. The process of the present invention provides good step coverage and smoothens the substrate surface. It also makes it possible to increase the degree of integration of memory devices, photosensitive devices, image inputting devices, imaging devices, etc. Moreover, it makes it possible to realize the three-dimensional integrated circuits.
Inventors
- 👤 Shoji Nishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
79 words
A process for forming a silicon-containing semi-conductor thin film, said process which comprises the steps of making a film-forming raw material gas containing silicon atoms as the constituent atoms in the molecule to be adsorbed in liquid form on the cooled surface of a substrate and subsequently causing the liquefied film-forming raw material to chemically react with active hydrogen atoms to thereby solidify the silicon-containing material and form a silicon-containing semiconductor thin film on the surface of the substrate.
Claim 2
Dependent Claim
79 words
A process for forming a silicon-containing semi-conductor thin film, said process which comprises the steps of making a film-forming raw material gas containing silicon atoms as the constituent atoms in the molecule to be adsorbed in liquid form on the cooled surface of a substrate and subsequently causing the liquefied film-forming raw material to chemically react with active hydrogen atoms to thereby solidify the silicon-containing material and form a silicon-containing semiconductor thin film on the surface of the substrate.
Claim 3
Dependent Claim
64 words
A process for forming a semiconductor thin film according to claim 1, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u H 2u+2 and compounds represented by the formula: Si v H 2v , where u is an integer of 2 or above, and v is an integer of 3 or above.
Claim 4
Dependent Claim
66 words
A process for forming a semiconductor thin film according to claim 1, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u H x Y y , where Y denotes an element selected from the group consisting of F, Cl, Br and I; x+y=2u or 2u+2; and u is an integer of 2 or above.
Claim 5
Dependent Claim
79 words
A process for forming semiconductor thin film as according to claim 1, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u Y 2u+2 and compounds represented by the formula: Si v Y 2v , where Y denotes an element selected from the group consisting of F, Cl, Br and I, u is an integer of 2 or above, and v is an integer of 3 or above.
Claim 6
Dependent Claim
45 words
A process for forming a semiconductor thin film according to claim 1, wherein said active hydrogen atoms are formed by glow discharge or microwave discharge in hydrogen gas, by irradiation of hydrogen gas with ultraviolet rays, or by reaction of hydrogen gas with a metal.
Claim 7
Dependent Claim
117 words
A process for forming a silicon-containing semiconductor thin film, said process which comprises the steps of introducing a film-forming raw material gas containing silicon atoms as the constituent atoms in the molecule and active hydrogen atoms into a film-forming space wherein a substrate having a cooled surface on which a film is to be formed is placed, permitting said film-forming raw material gas and said active hydrogen atoms to chemically react and form an intermediate substance, causing said intermediate substance to be adsorbed and liquefied on said cooled surface of substrate and chemically reacting said intermediate substance liquified on said cooled surface of substrate with active hydrogen atoms to form a silicon-containing semiconductor film on said substrate.
Claim 8
Dependent Claim
117 words
A process for forming a silicon-containing semiconductor thin film, said process which comprises the steps of introducing a film-forming raw material gas containing silicon atoms as the constituent atoms in the molecule and active hydrogen atoms into a film-forming space wherein a substrate having a cooled surface on which a film is to be formed is placed, permitting said film-forming raw material gas and said active hydrogen atoms to chemically react and form an intermediate substance, causing said intermediate substance to be adsorbed and liquefied on said cooled surface of substrate and chemically reacting said intermediate substance liquified on said cooled surface of substrate with active hydrogen atoms to form a silicon-containing semiconductor film on said substrate.
Claim 9
Dependent Claim
65 words
A process for forming a silicon-containing semiconductor thin film according to claim 6, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u H 2u+2 and compounds represented by the formula: Si v H 2v , where u is an integer of 2 or above, and v is an integer of 3 or above.
Claim 10
Dependent Claim
67 words
A process for forming a silicon-containing semiconductor thin film according to claim 6, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u H x Y y , where Y denotes an element selected from the group consisting of F, Cl, Br and I: x+y=2u or 2u+2; an du is an integer of 2 or above.
Claim 11
Dependent Claim
80 words
A process for forming a silicon-containing semiconductor thin film according to claim 6, wherein said film-forming raw material is a member selected from the group consisting of compounds represented by the formula: Si u Y 2u+2 and compounds represented by the formula Si v Y 2v , where Y denotes an element selected from the group consisting of F, Cl, Br and I, u is an integer of 2 or above, and v is an integer of 3 or above.
Claim 12
Dependent Claim
46 words
A process for forming a silicon-containing semiconductor thin film according to claim 6, wherein said active hydrogen atoms are formed by glow discharge or microwave discharge in hydrogen gas, by irradiation of hydrogen gas with ultraviolet rays, or by reaction of hydrogen gas with a metal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-05-21 | 1993-11-20 | 1994-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-21 | 1997-11-20 | 1998-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-21 | 2001-11-20 | 2002-05-22 | $7700.00 | Window Closed / Lapsed |