Customizable semiconductor devices

Claim 2

A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers lie in overlapping electrical insulating relationship; said first metal layer including a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges including first and second fusible links; said first metal layer also including a plurality of branch strips, each branch strip connecting one of said fusible conductive bridges at a location intermediate said first and second fusible links to a branch overlap location spaced from said multiplicity of elongate strip overlap locations, a via extending between said first metal layer and said second metal layer at each of said branch overlap locations.

Claim 3

A selectably customizable semiconductor device according to claim 1 and also comprising a fusible link formed on each strip of said pair of adjacent first elongate strips intermediate each pair of adjacent fusible conductive bridges.

Claim 4

A selectably customizable semiconductor device according to claim 1 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 5

A selectably customizable semiconductor device according to claim 2 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 6

A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers lie in overlapping electrical insulating relationship; said first metal layer including a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges including first and second fusible links; a via extending between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein branch overlap locations at adjacent second elongate strips are offset from each other such that they are not all aligned along a single line extending perpendicular to said second elongate strips.

Claim 7

A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers lie in overlapping electrical insulating relationship; said first metal layer including a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges including first and second fusible links; a via extending between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein branch overlap locations at adjacent second elongate strips are offset from each other such that they are not all aligned along a single line extending perpendicular to said second elongate strips.

Claim 8

A selectably customizable semiconductor device according to claim 5 and also comprising a fusible link formed on each strip of said pair of adjacent first elongate strips intermediate each pair of adjacent fusible conductive bridges.

Claim 9

A selectably customizable semiconductor device according to claim 5 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 10

A selectably customizable semiconductor device according to claim 6 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 11

A selectably customizable semiconductor device comprising: a metal II layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a metal I layer disposed in a second plane generally parallel to and electrically insulating from said first plane and including second elongate stripe extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said metal layers lie in overlapping electrical insulating relationship; said metal II layer including a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges including first and second fusible links; a via extending between said metal II layer and said metal I layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein each of said fusible conductive bridges lies in overlapping codirectional relationship with said second elongate strips.

Claim 12

A selectably customizable semiconductor device comprising: a metal II layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a metal I layer disposed in a second plane generally parallel to and electrically insulating from said first plane and including second elongate stripe extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said metal layers lie in overlapping electrical insulating relationship; said metal II layer including a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges including first and second fusible links; a via extending between said metal II layer and said metal I layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein each of said fusible conductive bridges lies in overlapping codirectional relationship with said second elongate strips.

Claim 13

A selectably customizable semiconductor device according to claim 9 and also comprising a third fusible link formed on each strip of said pair of adjacent first elongate strips intermediate each pair of adjacent fusible conductive bridges.

Claim 14

A selectably customizable semiconductor device according to claim 9 and also comprising a third fusible link formed on each strip of said pair of adjacent first elongate strips at each fusible conductive bridge.

Claim 15

A selectably customizable semiconductor device according to claim 11 and wherein a fusible link is disposed adjacent to each of said first and second fusible links.

Claim 16

A selectably customizable semiconductor device according to claim 9 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 17

A selectably customizable semiconductor device comprising: a metal II layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a metal I layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said metal layers lie in overlapping electrical insulating relationship; said metal II layer including a plurality of fusible conductive branches joined to said first elongate strips, said fusible conductive branches including a first fusible link; a via extending between said metal II layer and said metal I layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive branch overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein each of said fusible conductive branches lies in overlapping codirectional relationship with said second elongate strips.

Claim 18

A selectably customizable semiconductor device comprising: a metal II layer disposed in a first plane and including first elongate strips extending parallel to a first axis; a metal I layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said metal layers lie in overlapping electrical insulating relationship; said metal II layer including a plurality of fusible conductive branches joined to said first elongate strips, said fusible conductive branches including a first fusible link; a via extending between said metal II layer and said metal I layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive branch overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein each of said fusible conductive branches lies in overlapping codirectional relationship with said second elongate strips.

Claim 19

A selectably customizable semiconductor device according to claim 14 and also comprising a second fusible link formed on each first elongate strip intermediate each pair of adjacent fusible conductive branches.

Claim 20

A selectably customizable semiconductor device according to claim 14 and also comprising a second fusible link formed on each first elongate strip at each fusible conductive branch.

Claim 21

A selectably customizable semiconductor device according to claim 14 and also comprising a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.

Claim 22

A selectably customizable semiconductor device according to claim 1 and wherein said first metal layer is a metal I layer and said second metal layer is a metal II layer.

Claim 23

A selectably customizable semiconductor device according to claim 7 and wherein said first metal layer is a metal I layer and said second metal layer is a metal II layer.

Claim 24

An at least partially customized semiconductor device according to claim 1 and wherein at least some of said fusible links are fused.

Claim 25

An at least partially customized semiconductor device according to claim 9 and wherein at least some of said fusible links are fused.

Claim 26

An at least partially customized semiconductor device according to claim 7 and wherein at least some of said fusible links are fused.

Claim 27

An at least partially customized semiconductor device according to claim 14 and wherein at least some of said fusible links are fused.

Claim 28

A semiconductor device according to claim 1 and wherein said first and second elongate strips are arranged in a regular grid pattern.

Claim 29

A semiconductor device according to claim 7 and wherein said first and second elongate strips are arranged in a regular grid pattern.

Claim 30

A semiconductor device according to claim 9 and wherein said first and second elongate strips are arranged in a regular grid pattern.

Claim 31

A semiconductor device according to claim 14 and wherein said first and second elongate strips are arranged in a regular grid pattern.