Patent US4937477A successfully refreshed from Google Patents.
US4937477A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated mos high-voltage level-translation circuit, structure and method
Assignee: Supertex LLC
•
Filing: 1988-01-19
•
Granted: 1990-06-26
•
Expires: 2008-01-19
Abstract
Abstract A high-voltage level translator circuit is disclosed that is suitable for monolithic integration. The level translator circuit comprises serially-connected current sources suitably ratioed so that the gating on of one current source causes a limited voltage rise across the other current source, which is ungated. The circuit is suitable for integration in a junction-isolated monolithic pseudo-complementary CMOS format.
Inventors
- 👤 Hak-Yam Tsoi
- 👤 Benedict C. K. Choy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:59
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H03; H03K; H03K19/00; H03K19/003; H03K19/00315; H03K19/0175; H03K19/0185; H03K19/018557; H03K19/018571; H10D84/8311
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
168 words
A level translation circuit for providing a low differential output voltage referenced to a high supply voltage in response to a low-voltage driving signal, where both said low-voltage driving signal and said low differential output voltage are less than said high supply voltage, comprising, in combination: first gated current source means coupled to said low voltage driving signal and having a breakdown voltage at least equal to said high supply voltage for switching current between a first current level and a second current level higher than said first current level; and second current source means serially coupled between said first gated current source means and said high supply voltage for establishing said low differential output voltage, said second current source means establishing a third current level less than said second current level of said first gated current source means wherein said first gated current source means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
Claim 2
Dependent Claim
168 words
A level translation circuit for providing a low differential output voltage referenced to a high supply voltage in response to a low-voltage driving signal, where both said low-voltage driving signal and said low differential output voltage are less than said high supply voltage, comprising, in combination: first gated current source means coupled to said low voltage driving signal and having a breakdown voltage at least equal to said high supply voltage for switching current between a first current level and a second current level higher than said first current level; and second current source means serially coupled between said first gated current source means and said high supply voltage for establishing said low differential output voltage, said second current source means establishing a third current level less than said second current level of said first gated current source means wherein said first gated current source means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
Claim 3
Dependent Claim
23 words
The level translation circuit according to claim 1, wherein said first gated current source means further comprises an N-channel enhancement mode MOS transistor.
Claim 4
Dependent Claim
27 words
The level translation circuit according to claim 2, wherein said N-channel enhancement mode MOS transistor has a breakdown at least substantially equal to said high supply voltage.
Claim 5
Dependent Claim
26 words
The level translation circuit according to claim 1, further including voltage-limiting means coupled across said second current source means for establishing said low differential output voltage.
Claim 6
Dependent Claim
26 words
The level translation circuit of claim 1, wherein said first gated current source means and said second current source means comprise a junction-isolated CMOS integrated circuit.
Claim 7
Dependent Claim
151 words
A level translation circuit, comprising, in combination: a first terminal means for coupling said circuit with a first supply voltage; a second terminal means for coupling said circuit with a second supply voltage; first gated current source means coupled to said second terminal means for establishing a first current level; second current source means coupled to said first gated current source means and said first terminal means for establishing a second current level less than said first current level; input terminal means for providing a gating signal to said first gated current source means; and output terminal means coupled to said first gated current source means and said second current source means for providing an output signal referenced to said first supply voltage wherein said first gated current means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
Claim 8
Dependent Claim
151 words
A level translation circuit, comprising, in combination: a first terminal means for coupling said circuit with a first supply voltage; a second terminal means for coupling said circuit with a second supply voltage; first gated current source means coupled to said second terminal means for establishing a first current level; second current source means coupled to said first gated current source means and said first terminal means for establishing a second current level less than said first current level; input terminal means for providing a gating signal to said first gated current source means; and output terminal means coupled to said first gated current source means and said second current source means for providing an output signal referenced to said first supply voltage wherein said first gated current means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
Claim 9
Dependent Claim
26 words
The circuit according to claim 6, further including voltage limiting means coupled across said second current source means for establishing the value of said output signal.
Claim 10
Independent Claim
171 words
A method for providing a low differential output voltage referenced to a high supply voltage in response to a low-voltage driving signal, wherein both said low-voltage driving signal and said low differential output voltage are less than said high supply voltage, comprising the steps of: providing a first gated current source means coupled to said low voltage driving signal and having a breakdown voltage at least equal to said high supply voltage for switching current between a first current level and a second current level higher than said first current level; and providing a second current source means serially coupled between said first gated current source means and said high supply voltage for establishing said low differential output voltage, said second current source means establishing a third current level less than said second current level of said first gated current source means wherein said first gated current source means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
Claim 11
Independent Claim
171 words
A method for providing a low differential output voltage referenced to a high supply voltage in response to a low-voltage driving signal, wherein both said low-voltage driving signal and said low differential output voltage are less than said high supply voltage, comprising the steps of: providing a first gated current source means coupled to said low voltage driving signal and having a breakdown voltage at least equal to said high supply voltage for switching current between a first current level and a second current level higher than said first current level; and providing a second current source means serially coupled between said first gated current source means and said high supply voltage for establishing said low differential output voltage, said second current source means establishing a third current level less than said second current level of said first gated current source means wherein said first gated current source means and said second current source means each comprise a P-channel depletion mode MOS transistor having a gate connected to a source thereof.
References Cited (Backward Citations)
US3407339A
Cited
JPS5313852A
Cited
US4101788A
Cited
US4191898A
Cited
US4305009A
Cited
US4296335A
Cited
US4578694A
Cited
US4578600A
Cited
US4626704A
Cited
US4518926A
Cited
US4767950A
Cited
US4556804A
Cited
JPS60253314A
Cited
US4631426A
Cited
US4584492A
Cited
US4743782A
Cited
US4812863A
Cited
US4853563A
Cited
US4810969A
Cited
US4873458A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |