US4939556A
Expired / Lapsed
US
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Conductor device
Assignee: Canon Inc
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Filing: 1987-07-09
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Granted: 1990-07-03
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Expires: 2007-07-09
Abstract
Abstract A semiconductor device is provided and which comprises a semiconductor having insulating layers and conductive layers laminated alternately. The semiconductor comprises an organic film, and electrodes are provided on the semiconductor.
Inventors
- 👤 Ken Eguchi
- 👤 Haruki Kawada
- 👤 Kunihiro Sakai
- 👤 Yoshinori Tomida
- 👤 Hiroshi Matsuda
- 👤 Toshiaki Kimura
- 👤 Kiyoshi Takimoto
- 👤 Toshihiko Miyazaki
- 👤 Yuko Morikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:40
CPC Classifications
H; H10; H10K; H10K85/00; H10K85/60; H10K85/649; H10K85/654; B; B82; B82Y; B82Y10/00; H10K10/00; H10K10/40; H10K10/43; H10K10/46; H10K10/701; H10K85/611; H10K85/652; H10K85/655; H10K85/657; H10K85/6572; H10K85/701
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
67 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination.
Claim 2
Dependent Claim
67 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination.
Claim 3
Dependent Claim
53 words
The non-linear type device capable of resonance tunnel phenomenon of claim 1, wherein said insulating layer comprises an organic material and said conductive layer comprises an organic material which includes a monomolecular film or monomolecular built-up film of an organic compound having a hydrophilic part and a hydrophobic part in the molecule thereof.
Claim 4
Dependent Claim
87 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a molecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, wherein said charge transfer complex is a complex of a long chain alkyl group containing quaternary ammonium compound with tetracyanoquinodimethane.
Claim 5
Dependent Claim
87 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a molecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, wherein said charge transfer complex is a complex of a long chain alkyl group containing quaternary ammonium compound with tetracyanoquinodimethane.
Claim 6
Dependent Claim
89 words
A semiconductor device, comprising (1) a semiconductor positioned between an emitter electrode and a collector electrode and including alternate laminated layers of an insulating layer made of an organic material and a conductive layer made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film, and (2) a base electrode electrically connected to said conductive layer; said semiconductor, wherein the device increases a current between said emitter electrode and said collector electrode depending on the current between the emitter electrode and the base electrode.
Claim 7
Dependent Claim
89 words
A semiconductor device, comprising (1) a semiconductor positioned between an emitter electrode and a collector electrode and including alternate laminated layers of an insulating layer made of an organic material and a conductive layer made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film, and (2) a base electrode electrically connected to said conductive layer; said semiconductor, wherein the device increases a current between said emitter electrode and said collector electrode depending on the current between the emitter electrode and the base electrode.
Claim 8
Dependent Claim
72 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, and a conductive layer made of an organic material, said semiconductor exhibiting negative electrical resistance.
Claim 9
Dependent Claim
72 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, and a conductive layer made of an organic material, said semiconductor exhibiting negative electrical resistance.
Claim 10
Dependent Claim
92 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, wherein said charge transfer complex is a complex of quaternary ammonia compound having a long chain alkyl group with tetracyanoquinodimethane and a conductive layer made of an organic material, said semiconductor exhibiting negative electrical resistance.
Claim 11
Dependent Claim
92 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination, wherein said charge transfer complex is a complex of quaternary ammonia compound having a long chain alkyl group with tetracyanoquinodimethane and a conductive layer made of an organic material, said semiconductor exhibiting negative electrical resistance.
Claim 12
Dependent Claim
26 words
The non-linear type device capable of resonance tunnel phenomenon of claim 2, wherein said monomolecular built-up film is in the range of 4 to 200 layers.
Claim 13
Dependent Claim
40 words
A semiconductor device comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film made of an organic material and a conductive layer made of an inorganic material.
Claim 14
Dependent Claim
40 words
A semiconductor device comprising a semiconductor and electrodes, said semiconductor including alternate laminated layers of an insulating layer being a monomolecular film or monomolecular built-up film made of an organic material and a conductive layer made of an inorganic material.
Claim 15
Dependent Claim
33 words
The semiconductor device of claim 8, wherein said organic insulating layer is a thin film of an organic compound the molecule of said organic compound having a hydrophilic part and a hydrophobic part.
Claim 16
Dependent Claim
28 words
The semiconductor device of claim 8, wherein the number of interfaces between said conductive layers and said insulating layers is in the range of from 2 to 20.
Claim 17
Dependent Claim
27 words
The semiconductor device of claim 8, wherein the number of interfaces between said conductive layers said insulating layers is in the range of from 2 to 10.
Claim 18
Dependent Claim
22 words
The semiconductor device of claim 8, wherein said organic insulating layer has a thickness ranging from several Å to several hundred Å.
Claim 19
Dependent Claim
24 words
The semiconductor device of claim 8, wherein said organic insulating layer has a thickness in the range of from 20 Å to 100 Å.
Claim 20
Dependent Claim
25 words
The semiconductor device of claim 8, wherein said inorganic conductive layer has a thickness in the range of from several Å to several hundred Å.
Claim 21
Dependent Claim
24 words
The semiconductor device of claim 8, wherein said inorganic conductive layer has a thickness in the range of from 10 Å to 100 Å.
Claim 22
Dependent Claim
22 words
The semiconductor device of claim 8, wherein said inorganic conductive layer is a thin film formed from a metal or an alloy.
Claim 23
Dependent Claim
18 words
The semiconductor device of claim 16, wherein said metal or alloy comprises Al, Ag, Au, Ni or Pt.
Claim 24
Dependent Claim
61 words
The semiconductor device of claim 8, wherein said inorganic conductive layer is a thin film formed from a substance containing Si or Ge, a substance containing an element selected from Group IIIB and an element selected from Group VB, or a substance containing an element selected from Group IIB and an element selected from Group VIB of the long-form periodic table.
Claim 25
Dependent Claim
28 words
The semiconductor device of claim 18, wherein said element selected from Group IIIB is Ga or In and said element selected from Group VB is As or P.
Claim 26
Dependent Claim
29 words
The semiconductor device of claim 18, wherein said element selected from Group IIB is Cd or Zn and said element selected from Group VIB is S, Se or O.
Claim 27
Dependent Claim
19 words
The semiconductor device of claim 8, wherein said inorganic conductive layer is a thin film formed from a silicide.
Claim 28
Dependent Claim
15 words
The semiconductor device of claim 21, wherein said silicide is nickel silicide or palladium silicide.
Claim 29
Dependent Claim
31 words
The non-linear type device capable of resonance tunnel phenomenon of claim 1, wherein said semiconductor is positioned between said electrodes and held parallel to the spreading direction of the laminated layers.
Claim 30
Dependent Claim
103 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film layer of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive hydrophilic part in combination, and wherein said semiconductor is positioned between said electrodes and held parallel to the spreading direction of the laminated layers, and wherein a third electrode is connected electrically to the conductive layer in the semiconductor.
Claim 31
Dependent Claim
103 words
A non-linear type device capable of resonance tunnel phenomenon comprising a semiconductor and electrodes, said semiconductor including alternating laminated insulating and conductive layers, each layer being made of an organic material, said insulating layer being a monomolecular film or monomolecular built-up film layer of an organic compound wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive hydrophilic part in combination, and wherein said semiconductor is positioned between said electrodes and held parallel to the spreading direction of the laminated layers, and wherein a third electrode is connected electrically to the conductive layer in the semiconductor.
Claim 32
Dependent Claim
25 words
The non-linear type device capable of resonance tunnel phenomenon of claim 5, wherein said conductive layer is a monomolecular film or a monomolecular built-up film.
Claim 33
Dependent Claim
47 words
The non-linear type device capable of resonance tunnel phenomenon of claim 25, wherein said conductive layer and said insulating layer are a monomolecular film or a monomolecular built-up film of an organic compound, the molecule of said organic compound having a hydrophilic part and a hydrophobic part.
Claim 34
Dependent Claim
34 words
The non-linear type device capable of resonance tunnel phenomenon of claim 26, wherein the molecule of said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part.
Claim 35
Dependent Claim
25 words
The semiconductor device of claim 8, wherein said semiconductor is positioned between said electrodes and held parallel to the spreading direction of the laminated layers.
Claim 36
Dependent Claim
20 words
The semiconductor device of claim 28, wherein a third electrode is connected electrically to the conductive layer in the semiconductor.
Claim 37
Dependent Claim
24 words
The non-linear device capable of resonance tunnel phenomenon of claim 1, wherein said conductive layer is a monomolecular film or a monomolecular built-up film.
Claim 38
Dependent Claim
21 words
The semiconductor device according to claim 8, wherein said semiconductor device is a non-linear type device capable of resonance tunnel phenomenon.
Claim 39
Dependent Claim
15 words
The semiconductor device according to claim 4, wherein said semiconductor comprises a charge transfer complex.
Claim 40
Dependent Claim
35 words
The semiconductor device according to claim 4, wherein said complex comprises at least one organic material selected from the group consisting of tetracyanoquinodimethane and its derivatives, tetrathiafulvalene and its derivatives, and tetrathiatetracene and its derivatives.
Claim 41
Dependent Claim
21 words
The semiconductor device according to claim 4, wherein said insulating layer has a thickness ranging from 10 Å to 100 Å.
Claim 42
Dependent Claim
21 words
The semiconductor device according to claim 4, wherein said conducting layer has a thickness ranging from 3 Å to 50 Å.
Claim 43
Dependent Claim
20 words
The semiconductor device according to claim 4, wherein said semiconductor has a thickness ranging from 50 Å to 1,000 Å.
References Cited (Backward Citations)
US2070642A
Cited
US3953874A
Cited
US4205329A
Cited
US4127738A
Cited
US4197142A
Cited
US4586062A
Cited
US4627029A
Cited
EP0165111A1
Cited
US4672265A
Cited
US4725513A
Cited
US4665412A
Cited
US4813016A
Cited
GB2190792A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-02 | 1994-01-01 | 1994-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-02 | 1998-01-01 | 1998-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-02 | 2002-01-01 | 2002-07-03 | $7700.00 | Window Closed / Lapsed |