Patent US4954142A successfully refreshed from Google Patents.
US4954142A
Expired / Lapsed
US
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Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
Assignee: CMC Materials LLC
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Filing: 1989-03-07
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Granted: 1990-09-04
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Expires: 2009-03-07
Abstract
Abstract Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.
Inventors
- 👤 Jeffrey W. Carr
- 👤 Lawrence D. David
- 👤 William L. Guthrie
- 👤 Frank B. Kaufman
- 👤 William J. Patrick
- 👤 Kenneth P. Rodbell
- 👤 Robert W. Pasco
- 👤 Anton Nenadic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:37
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/02; C; C09; C09G; C09G1/00; C09G1/02; H10W70/05; H10W70/097
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
18 words
A chem-mech polishing slurry comprising: abrasive particles; a transition metal chelated salt; and a solvent for said salt.
Claim 2
Dependent Claim
18 words
A chem-mech polishing slurry comprising: abrasive particles; a transition metal chelated salt; and a solvent for said salt.
Claim 3
Dependent Claim
10 words
The slurry of claim 1 further comprising a passivating agent.
Claim 4
Dependent Claim
12 words
The slurry of claim 2 wherein said passivating agent comprises a phosphate.
Claim 5
Dependent Claim
12 words
The slurry of claim 3 wherein said phosphate comprises dilute phosphoric acid.
Claim 6
Dependent Claim
12 words
The slurry of claim 3 wherein said phosphate comprises dilute ammonium phosphate.
Claim 7
Dependent Claim
21 words
The slurry of claim 2 wherein said passivating agent is present in the range of about 0.01 to 0.5 weight percent.
Claim 8
Dependent Claim
39 words
The slurry of claim 1 wherein said transition metal chelated salt is present in the range of about 0.1 to 10 weight percent and said abrasive particles are present in the range of about 1 to 30 weight percent.
Claim 9
Dependent Claim
26 words
The slurry of claim 1 wherein said transition metal in said transition metal chelated salt is selected from the group consisting of iron, cobalt and nickel.
Claim 10
Dependent Claim
20 words
The slurry of claim 8 wherein said transition metal chelated salt is ammonium iron EDTA and said slurry is aqueous.
Claim 11
Dependent Claim
26 words
The slurry of claim 1 wherein said abrasive particles are selected from the group consisting of silica, ceria, alumina, silicon carbide, silicon nitride and iron oxide.
Claim 12
Independent Claim
84 words
A method of chem-mech polishing an article, the method comprising the following steps: obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said article with a polishing pad while contacting said article with a slurry containing said etchant wherein said slurry comprises abrasive particles, a transition metal chelated salt and a solvent for said salt; said chem-mech polishing causing said at least two features to be substantially coplanar.
Claim 13
Independent Claim
84 words
A method of chem-mech polishing an article, the method comprising the following steps: obtaining an article having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said article with a polishing pad while contacting said article with a slurry containing said etchant wherein said slurry comprises abrasive particles, a transition metal chelated salt and a solvent for said salt; said chem-mech polishing causing said at least two features to be substantially coplanar.
Claim 14
Dependent Claim
23 words
The method of claim 11 further comprising the step of mechanically polishing said at least two features after the step of chem-mech polishing.
Claim 15
Dependent Claim
13 words
The method of claim 11 wherein said slurry further comprises a passivating agent.
Claim 16
Dependent Claim
12 words
The method of claim 13 wherein said passivating agent comprises a phosphate.
Claim 17
Dependent Claim
12 words
The method of claim 14 wherein said phosphate comprises dilute phosphoric acid.
Claim 18
Dependent Claim
12 words
The method of claim 14 wherein said phosphate comprises dilute ammonium phosphate.
Claim 19
Dependent Claim
21 words
The method of claim 13 wherein said passivating agent is present in the range of about 0.01 to 0.5 weight percent.
Claim 20
Dependent Claim
39 words
The method of claim 11 wherein said transition metal chelated salt is present in the range of about 0.1 to 10 weight percent and said abrasive particles are present in the range of about 1 to 30 weight percent.
Claim 21
Dependent Claim
26 words
The method of claim 11 wherein said transition metal in said transition metal chelated salt is selected from the group consisting of iron, cobalt and nickel.
Claim 22
Dependent Claim
20 words
The method of claim 19 wherein said transition metal chelated salt is ammonium iron EDTA and said slurry is aqueous.
Claim 23
Dependent Claim
26 words
The method of claim 11 wherein said abrasive particles are selected from the group consisting of silica, ceria, alumina, silicon carbide, silicon nitride and iron oxide.
Claim 24
Independent Claim
111 words
A method of chem-mech polishing an electronic component substrate, the method comprising the following steps: obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said substrate with a polishing pad while contacting said substrate with a slurry containing said etchant and abrasive particles; chem-mech polishing said at least two features; gradually decreasing the flow of said chem-mech slurry while beginning and then increasing the flow of a mechanical slurry comprising abrasive particles but no etchant; wherein the combination of said chem-mech polishing and mechanical polishing causing said at least two features to be substantially coplanar.
Claim 25
Independent Claim
111 words
A method of chem-mech polishing an electronic component substrate, the method comprising the following steps: obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said substrate with a polishing pad while contacting said substrate with a slurry containing said etchant and abrasive particles; chem-mech polishing said at least two features; gradually decreasing the flow of said chem-mech slurry while beginning and then increasing the flow of a mechanical slurry comprising abrasive particles but no etchant; wherein the combination of said chem-mech polishing and mechanical polishing causing said at least two features to be substantially coplanar.
Claim 26
Independent Claim
103 words
A method of chem-mech polishing an electronic component substrate, the method comprising the following steps: obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said substrate with a polishing pad while contacting said substrate with a slurry containing said etchant and abrasive particles; chem-mech polishing said at least two features; then mechanically polishing said at least two features with a slurry comprising abrasive particles but no etchant; wherein the combination of said chem-mech polishing and mechanical polishing causing said at least two features to be substantially coplanar.
Claim 27
Independent Claim
103 words
A method of chem-mech polishing an electronic component substrate, the method comprising the following steps: obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting said substrate with a polishing pad while contacting said substrate with a slurry containing said etchant and abrasive particles; chem-mech polishing said at least two features; then mechanically polishing said at least two features with a slurry comprising abrasive particles but no etchant; wherein the combination of said chem-mech polishing and mechanical polishing causing said at least two features to be substantially coplanar.
Claim 28
Dependent Claim
13 words
The method of claim 11 wherein said article is an electronic component substrate.
References Cited (Backward Citations)
US3428811A
Cited
US4226623A
Cited
US4389819A
Cited
US4529410A
Cited
US4475981A
Cited
US4685937A
Cited
US4696697A
Cited
US4705566A
Cited
US4769046A
Cited
US4702792A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-09-03 | 1994-03-05 | 1994-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-03 | 1998-03-05 | 1998-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-03 | 2002-03-05 | 2002-09-04 | $7700.00 | Window Closed / Lapsed |