Sputtered metallic silicide gate for GaAs integrated circuits

Claim 2

A GaAs integrated circuit structure, comprising a GaAs substrate and a metallic silicide gate formed of at least three sequentially sputtered, multiple layers of silicon and a metal deposited onto the GaAs substrate, said multiple layers including a first layer and having at least two subsequent layers sputtered thereon, wherein said multiple layers have an individual thickness of from about 50 to 100 angstroms each.

Claim 3

A circuit structure as in claim 1 wherein said GaAs substrate includes a (100)-oriented gallium arsenide substrate.

Claim 4

A circuit structure as in claim 1 wherein said multiple layers include co-sputtered layers formed by placing the substrate under alternating silicon and metal targets whereby individual sequential alternate layers are deposited.

Claim 5

A circuit structure as in claim 1 wherein said multiple layers include at least three alternating silicon and tungsten layers.

Claim 6

A circuit structure as in claim 1 wherein said multiple layers include at least 39 layers.

Claim 7

A circuit structure as in claim 1 wherein said multiple layers have an individual thickness of from about 50 to 100 angstroms each.

Claim 8

A circuit structure as in claim 1 wherein said multiple layers have an individual thickness of about 75 angstroms. wherein said multiple layers have an individual thickness of from about 50 to 100 angstroms each.

Claim 9

A circuit structure as in claim 1 wherein said multiple layers have a collective thickness of from about 500 to 5,000 angstroms, whereby the metallic silicide gate has a thickness of from about 500 to 5,000 angstroms.

Claim 10

A circuit structure as in claim 1 wherein the collective thickness of the multiple layers is about 3,000 angstroms.

Claim 11

A GaAs integrated circuit structure, comprising: a (100)-oriented gallium arsenide substrate (12); a tungsten silicide gate (18) formed of sequentially and alternatively co-sputter deposited multiple layers (14,16,14',16,) of silicon and tungsten on the gallium arsenide substrate; the first of said multiple layers being a layer of silicon (14) sputtered from a silicon target to a thickness of about 75 angstroms; the second of said multiple layers being a layer of tungsten (16) sputtered from a tungsten target to a thickness of about 75 angstroms; the third of said multiple layers being a second layer of silicon (14') sputtered from a silicon target to a thickness of about 75 angstroms; subsequent layer of gate material being alternating layers of tungsten (16') and silicon (14'), one on top of the other formed to a total gate thickness of about 3,000 angstroms.

Claim 12

A GaAs integrated circuit structure, comprising: a (100)-oriented gallium arsenide substrate (12); a tungsten silicide gate (18) formed of sequentially and alternatively co-sputter deposited multiple layers (14,16,14',16,) of silicon and tungsten on the gallium arsenide substrate; the first of said multiple layers being a layer of silicon (14) sputtered from a silicon target to a thickness of about 75 angstroms; the second of said multiple layers being a layer of tungsten (16) sputtered from a tungsten target to a thickness of about 75 angstroms; the third of said multiple layers being a second layer of silicon (14') sputtered from a silicon target to a thickness of about 75 angstroms; subsequent layer of gate material being alternating layers of tungsten (16') and silicon (14'), one on top of the other formed to a total gate thickness of about 3,000 angstroms.

Claim 13

A GaAs integrated circuit structure, comprising: a GaAs substrate; a thin barrier layer of a composite sputtered metallic silicide deposited atop said substrate to form a Schottky barrier, said composite sputtered metallic silicide having a silicon: metal ratio of between 0.3 and 0.8:1; and a plurality of subsequent thin layers of metallic silicide material deposited atop said barrier layer, said barrier layer and each of said plurality of subsequent thin layers sputtered to a thickness from 50 to 100 angstroms thick to achieve a collective thickness of from 500 to 5000 angstroms.

Claim 14

A GaAs integrated circuit structure, comprising: a GaAs substrate; a thin barrier layer of a composite sputtered metallic silicide deposited atop said substrate to form a Schottky barrier, said composite sputtered metallic silicide having a silicon: metal ratio of between 0.3 and 0.8:1; and a plurality of subsequent thin layers of metallic silicide material deposited atop said barrier layer, said barrier layer and each of said plurality of subsequent thin layers sputtered to a thickness from 50 to 100 angstroms thick to achieve a collective thickness of from 500 to 5000 angstroms.