Patent US4982138A successfully refreshed from Google Patents.
US4982138A
Expired / Lapsed
US
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Semiconductor wafer treating device utilizing a plasma
Assignee: Mitsubishi Electric Corp
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Filing: 1988-11-29
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Granted: 1991-01-01
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Expires: 2008-11-29
Abstract
Abstract A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.
Inventors
- 👤 Nobuo Fujiwara
- 👤 Kenji Kawai
- 👤 Moriaki Akazawa
- 👤 Teruo Shibano
- 👤 Tomoaki Ishida
- 👤 Kyusaku Nishioka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:04
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3266; H01J37/32678
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
129 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising two annular coils surrounding said second chamber and Ioffe bars electrically interconnected with said coils.
Claim 2
Independent Claim
129 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising two annular coils surrounding said second chamber and Ioffe bars electrically interconnected with said coils.
Claim 3
Dependent Claim
46 words
A device for treating semiconductor wafers as claimed in claim 1 wherein said discharge means comprises means for supplying microwave energy to said second chamber, the plasma of said gas being generated by a gas discharge caused by said microwave energy supplied to said second chamber.
Claim 4
Dependent Claim
35 words
A device for treating semiconductor wafers as claimed in claim 1 wherein said gas discharge means comprises means for supplying microwave energy at a predetermined frequency to produce electron cyclotron resonance in the gas discharge.
Claim 5
Independent Claim
122 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising a baseball coil disposed around said second chamber.
Claim 6
Independent Claim
122 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising a baseball coil disposed around said second chamber.
Claim 7
Independent Claim
121 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising a Yin-yang coil surrounding said second chamber.
Claim 8
Independent Claim
121 words
A device for treating semiconductor wafers utilizing a plasma generated by a gas discharge comprising: a first chamber accommodating holder means for holding a semiconductor wafer; a second chamber disposed adjacent to and in communication with said first chamber; gas supplying means for supplying a gas to said second chamber; discharge means for producing a gas discharge in said second chamber, thereby generating a plasma of the gas in said second chamber; and magnetic field producing means for producing a magnetic field having a minimum, non-zero value at a location in said second chamber, the magnetic field increasing in said second chamber in every direction from the location of the minimum, non-zero value, comprising a Yin-yang coil surrounding said second chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |