Semiconductor device in which wiring layer is formed below bonding pad

Claim 2

A semiconductor device comprising: a semiconductor substrate having a major surface including a major surface region; an active region formed in said major surface region of said semiconductor substrate; a first insulating layer formed on said major surface of said semiconductor substrate; a first-tier contact hole formed at a position in said first insulating layer corresponding to said active region; a metal layer formed in said first-tier contact hole and a portion of said first insulating layer around said first-tier contact hole; a second insulating layer formed on said metal layer and said first insulating layer; a second-tier contact hole formed at a position in said second insulating layer corresponding to said metal layer and located above said first-tier contact hole; a bonding paid formed on a portion of said second insulating layer and filled in said second-tier contact hole; and a bonding wire connected to regions of said bonding pad located above said first-tier and second -tier contact holes.

Claim 3

A device according to claim 1, wherein said active region includes a first impurity region formed in said active region of said major surface region of said semiconductor substrate and having a conductivity type opposite to that of said semiconductor substrate and a second impurity region formed in a surface portion of said first impurity region and having the same conductivity type as that of said semiconductor substrate.

Claim 4

A device according to claim 2, wherein said first-tier contact hole is formed in a portion of said first insulating layer on said second impurity region, and said metal layer is filled in said first-tier contact hole and formed on said first insulating layer around said first-tier contact hole.

Claim 5

A device according to claim 2, wherein said first-tier contact hole is formed in a portion of said first insulating layer on said first impurity region, and said metal layer is filled in said first-tier contact hole and formed ion said first insulating layer around said first-tier contact hole.

Claim 6

A device according to claim 2, wherein said semiconductor substrate serves as a collector region, said first impurity region serves as a base region, and said second impurity region has a comb-like shape and serves as an emitter region.

Claim 7

A device according to claim 5, wherein said metal layer includes a comb-like emitter electrode and a comb-like base electrode, said comb-like emitter and base electrodes being arranged such that teeth of said emitter electrode and teeth of said base electrode are interdigitally arranged at predetermined intervals.

Claim 8

A device according to claim 1 wherein said bonding wire is bonded to said bonding pad by thermocompression bonding.

Claim 9

A semiconductor device comprising: a semiconductor region of a first conductivity type having a major surface portion; an impurity region formed in said major surface portion of said semiconductor region and having a second conductivity type; a first insulating layer formed on said semiconductor region; a first-tier contact hole formed at a position in said first insulating layer corresponding to said impurity region having the second conductivity type; a wiring layer filled in said first-tier contact hole and formed on said first insulating layer around said first-tier contact hole; a second insulating layer formed on said wiring layer and said first insulating layer; a second-tier contact hole formed at a position in said second insulating layer corresponding to said wiring layer; a bonding pad filled in said second-tier contact hole and formed on said second insulating layer; and a bonding wire connected to said bonding pad located above said first-tier and second-tier contact holes.

Claim 10

A semiconductor device comprising: a semiconductor region of a first conductivity type having a major surface portion; an impurity region formed in said major surface portion of said semiconductor region and having a second conductivity type; a first insulating layer formed on said semiconductor region; a first-tier contact hole formed at a position in said first insulating layer corresponding to said impurity region having the second conductivity type; a wiring layer filled in said first-tier contact hole and formed on said first insulating layer around said first-tier contact hole; a second insulating layer formed on said wiring layer and said first insulating layer; a second-tier contact hole formed at a position in said second insulating layer corresponding to said wiring layer; a bonding pad filled in said second-tier contact hole and formed on said second insulating layer; and a bonding wire connected to said bonding pad located above said first-tier and second-tier contact holes.

Claim 11

A device according to claim 8, wherein said wiring layer includes a comb-like emitter electrode and a comb-like base electrode, said comb-like emitter and base electrodes being arranged such that teeth of said emitter electrode and teeth of said base electrode are interdigitally arranged at predetermined intervals.

Claim 12

A device according to claim 8, wherein said bonding wire is bonded to said bonding pad by thermocompression bonding.

Claim 13

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having a major surface portion; a first impurity region formed in said major surface portion of said semiconductor substrate and having a second conductivity type; a second impurity region formed in a surface portion of said first impurity region and having the first conductivity type; a first insulating layer formed on said semiconductor substrate; a first contact hole formed at a position in said first insulating layer corresponding to said second impurity region; a second contact hole formed at a position in said first insulating layer corresponding to said first impurity region; a comb-like first electrode filled in said first contact hole and formed on said first insulating layer around said first contact hole; a comb-like second electrode filled in said second contact hole and formed on said first insulating layer around said second contact hole; a second insulating layer formed on said first and second electrodes and said first insulating layer; a third contact hole formed at a position in said second insulating layer partially corresponding to said first electrode; a fourth contact hole formed at a position in said second insulating layer partially corresponding to said second electrode; a first bonding pad filled in said third contact hole and formed on a portion of said second insulating layer; a second bonding pad filled in said fourth contact hole and formed on a portion of said second insulating layer; a first bonding wire connected to said first bonding pad; and a second bonding wire connected to said second bonding pad.

Claim 14

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having a major surface portion; a first impurity region formed in said major surface portion of said semiconductor substrate and having a second conductivity type; a second impurity region formed in a surface portion of said first impurity region and having the first conductivity type; a first insulating layer formed on said semiconductor substrate; a first contact hole formed at a position in said first insulating layer corresponding to said second impurity region; a second contact hole formed at a position in said first insulating layer corresponding to said first impurity region; a comb-like first electrode filled in said first contact hole and formed on said first insulating layer around said first contact hole; a comb-like second electrode filled in said second contact hole and formed on said first insulating layer around said second contact hole; a second insulating layer formed on said first and second electrodes and said first insulating layer; a third contact hole formed at a position in said second insulating layer partially corresponding to said first electrode; a fourth contact hole formed at a position in said second insulating layer partially corresponding to said second electrode; a first bonding pad filled in said third contact hole and formed on a portion of said second insulating layer; a second bonding pad filled in said fourth contact hole and formed on a portion of said second insulating layer; a first bonding wire connected to said first bonding pad; and a second bonding wire connected to said second bonding pad.

Claim 15

A device according to claim 11, wherein said first electrode includes an emitter electrode.

Claim 16

A device according to claim 11, wherein said second electrode includes a base electrode.

Claim 17

A device according to claim 11, wherein said first and second bonding wires are respectively bonded to said first and second bonding pads by thermocompression bonding.

Claim 18

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having a major surface portion; a first impurity region formed in said major surface portion of said semiconductor substrate and having a second conductivity type; a second impurity region formed in a surface portion of said first impurity region and having the first conductivity type; a first insulating layer formed on said semiconductor substrate; a first contact hole formed at a position in said first insulating layer corresponding to said second impurity region; a second contact hole formed at a position in said first insulating layer corresponding to said first impurity region; a first electrode filled in said first contact hole and formed on said first insulating layer around said first contact hole; a second electrode filled in said second contact hole and formed on said first insulating layer around said second contact hole; a second insulating layer formed on said first and second electrodes and said first insulating layer; a third contact hole formed at a position in said second insulating layer partially corresponding to said first electrode; a fourth contact hole formed at a position in said second insulating layer partially corresponding to said second electrode; a first bonding pad filled in said third contact hole and formed on a portion of said second insulating layer; a second bonding pad filled in said fourth contact hole and formed on a portion of said second insulating layer; a first bonding wire connected to said first bonding pad; and a second bonding wire connected to said second bonding pad.

Claim 19

A semiconductor device comprising: a semiconductor substrate of a first conductivity type having a major surface portion; a first impurity region formed in said major surface portion of said semiconductor substrate and having a second conductivity type; a second impurity region formed in a surface portion of said first impurity region and having the first conductivity type; a first insulating layer formed on said semiconductor substrate; a first contact hole formed at a position in said first insulating layer corresponding to said second impurity region; a second contact hole formed at a position in said first insulating layer corresponding to said first impurity region; a first electrode filled in said first contact hole and formed on said first insulating layer around said first contact hole; a second electrode filled in said second contact hole and formed on said first insulating layer around said second contact hole; a second insulating layer formed on said first and second electrodes and said first insulating layer; a third contact hole formed at a position in said second insulating layer partially corresponding to said first electrode; a fourth contact hole formed at a position in said second insulating layer partially corresponding to said second electrode; a first bonding pad filled in said third contact hole and formed on a portion of said second insulating layer; a second bonding pad filled in said fourth contact hole and formed on a portion of said second insulating layer; a first bonding wire connected to said first bonding pad; and a second bonding wire connected to said second bonding pad.