US5028566A — Method of forming silicon dioxide glass films

Claim 1

Independent Claim 97 words

The method of manufacturing a semiconductor device comprising depositing in a low pressure chemical vapor deposition system a layer of SiO 2 or doped SiO 2 by the oxidation of a siloxane selected from the group consisting of 2,4,6,8 tetramethylcyclotetrasiloxane, 2,4,6,8 tetraethylcyclotetrasiloxane and octamethyltetracyclosiloxane, decamethyltetrasiloxane, octaphenylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane, 1,1,1,3,5,5,5-heptamethyl-3-tri-(butyl)siloxytrisiloxane, 1,1,1,3,5,5,5-heptamethyltrisiloxane and 1,1,3,5,5-pentamethyl-1,3,5-triphenyltrisiloxane on the hot surface of such semiconductor device at a pressure of less than about 500 mTorr and at a temperature of at least about 400° C. and up to about 625° C., whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 2

Independent Claim 97 words

The method of manufacturing a semiconductor device comprising depositing in a low pressure chemical vapor deposition system a layer of SiO 2 or doped SiO 2 by the oxidation of a siloxane selected from the group consisting of 2,4,6,8 tetramethylcyclotetrasiloxane, 2,4,6,8 tetraethylcyclotetrasiloxane and octamethyltetracyclosiloxane, decamethyltetrasiloxane, octaphenylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane, 1,1,1,3,5,5,5-heptamethyl-3-tri-(butyl)siloxytrisiloxane, 1,1,1,3,5,5,5-heptamethyltrisiloxane and 1,1,3,5,5-pentamethyl-1,3,5-triphenyltrisiloxane on the hot surface of such semiconductor device at a pressure of less than about 500 mTorr and at a temperature of at least about 400° C. and up to about 625° C., whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 3

Dependent Claim 100 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane and an oxidant over the heated device to cause the siloxane to oxidize on the surface of the device forming a layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 4

Dependent Claim 100 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane and an oxidant over the heated device to cause the siloxane to oxidize on the surface of the device forming a layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 5

Dependent Claim 15 words

The manufacture of semiconductor devices of claim 2 wherein the siloxane is a cyclic siloxane.

Claim 6

Dependent Claim 14 words

The manufacture of semiconductor devices of claim 3 wherein the siloxane is 2,4,6,8 tetramethylcyclotetrasiloxane.

Claim 7

Dependent Claim 30 words

The manufacture of semiconductor devices of claim 4 wherein the silicon dioxide layer is doped and wherein the dopant is selected from compounds of boron, phosphorus, arsenic, chromium or antimony.

Claim 8

Dependent Claim 129 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane having the general formula ##STR3## wherein R 1 , R 2 , R 3 and R 4 are hydrogen or lower alkyl, aryl, or aralkyl having up to 8 carbons, and oxygen over the heated device to cause the siloxane to decompose on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 9

Dependent Claim 129 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane having the general formula ##STR3## wherein R 1 , R 2 , R 3 and R 4 are hydrogen or lower alkyl, aryl, or aralkyl having up to 8 carbons, and oxygen over the heated device to cause the siloxane to decompose on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 10

Dependent Claim 21 words

The process of claim 6 wherein all of R 1 , R 2 , R 3 and R 4 are methyl.

Claim 11

Dependent Claim 142 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane having the general formula ##STR4## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are hydrogen or lower alkyl, aryl or aralkyl having up to 8 carbons and oxygen over the heated device to cause the siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 12

Dependent Claim 142 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of a siloxane having the general formula ##STR4## wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are hydrogen or lower alkyl, aryl or aralkyl having up to 8 carbons and oxygen over the heated device to cause the siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 13

Dependent Claim 127 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 m/Torr or less and flowing a mixture of a cyclic or acyclic siloxane compound having the formula (--H.sub.n R.sub.2-n SiO--).sub.m wherein n=0-2, and m is 2 or greater and R is lower 1-8 carbon alkyl, aryl, or aralkyl and oxygen over the heated device to cause the siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 14

Dependent Claim 127 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 400° C. to about 625° C. in a partial vacuum of about 500 m/Torr or less and flowing a mixture of a cyclic or acyclic siloxane compound having the formula (--H.sub.n R.sub.2-n SiO--).sub.m wherein n=0-2, and m is 2 or greater and R is lower 1-8 carbon alkyl, aryl, or aralkyl and oxygen over the heated device to cause the siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 15

Dependent Claim 98 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 500° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of tetramethylcyclotetrasiloxane and oxygen over the heated device to cause said siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Claim 16

Dependent Claim 98 words

In the manufacture of semiconductor devices, the steps of forming a layer of silicon dioxide or doped silicon dioxide comprising heating the device upon which the silicon dioxide layer is to be formed to a temperature of from about 500° C. to about 625° C. in a partial vacuum of about 500 mTorr or less and flowing a mixture of tetramethylcyclotetrasiloxane and oxygen over the heated device to cause said siloxane to oxidize on the surface of the device forming said layer of silicon dioxide, whereby said deposited layer of SiO 2 exhibits excellent step coverage and conformality.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1994-07-01	1994-12-31	1995-07-02	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1998-07-01	1998-12-31	1999-07-02	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2002-07-01	2002-12-31	2003-07-02	$7700.00	Window Closed / Lapsed

Method of forming silicon dioxide glass films

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag