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US5047385A
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Method of forming superconducting YBa2 Cu3 O7-x thin films with controlled crystal orientation
Assignee: Leland Stanford Junior University
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Filing: 1988-07-20
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Granted: 1991-09-10
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Expires: 2008-07-20
Abstract
Abstract A method of forming a superconducting YBa 2 Cu 3 O 7-x thin film with selected crystal orientation is described which comprises the steps of sputtering simultaneously Y, Ba and Cu onto the surface of a substrate, introducing oxygen at said surface during deposition, controlling the stoichiometry of the elements Y, Ba or both richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa 2 Cu 3 O 7-x .
Inventors
- 👤 Malcolm R. Beasley
- 👤 Kookrin Char
- 👤 Theodore H. Geballe
- 👤 Robert H. Hammond
- 👤 Aharon Kapitulnik
- 👤 Andy Kent
- 👤 Michio Naito
- 👤 Byungdu Oh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/087; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0408; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/742
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
85 words
The method of growing a thin film of nominally YBa 2 Cu 3 O 7-x composition with selected crystal orientation which comprises the steps of depositing material by sputtering simultaneously from Y, Ba and Cu sources on the surface of a substrate, introducing oxygen at said surface during deposition, controlling are richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa 2 Cu 3 O 7-x .
Claim 2
Independent Claim
85 words
The method of growing a thin film of nominally YBa 2 Cu 3 O 7-x composition with selected crystal orientation which comprises the steps of depositing material by sputtering simultaneously from Y, Ba and Cu sources on the surface of a substrate, introducing oxygen at said surface during deposition, controlling are richer or poorer than the 1:2:3 stoichiometry within a few atom percent and followed by annealing to selectively grow an a-axis or a c-axis oriented film of YBa 2 Cu 3 O 7-x .
Claim 3
Dependent Claim
22 words
The method of growing a thin film as in claim 1 wherein the thickness of the film is less than 4000 Å.
Claim 4
Dependent Claim
24 words
The method as in claim 1 in which Y, Ba or both are poorer than the 1:2:3 stoichiometry whereby to grow an a-axis films.
Claim 5
Dependent Claim
35 words
The method as in claim 3 including the additional steps of implanting Ba in selected regions of the grown a-axis film and annealing the film at elevated temperature to convert said implanted regions to c-axis.
Claim 6
Dependent Claim
24 words
The method as in claim 1 in which Y, Ba or both are richer than the 1:2:3 stoichiometry whereby to grow a c-axis film.
Claim 7
Dependent Claim
23 words
The method as in claim 5 including the additional step of annealing the grown film at 850° C. to improve the c-axis orientation.
Claim 8
Dependent Claim
36 words
The method as in claim 5 in which the thickness of the film is greater than about 4000 Å whereby the bottom layer of the film is c-axis and the top of the film is a-axis.
Claim 9
Dependent Claim
21 words
The method of growing a thin film as in claim 5 or 6 wherein excess barium is added to the composition.
Claim 10
Dependent Claim
47 words
The method of growing a thin film as in claim 1, 3 or 5 in which elements selected from the group consisting of La, Ce, Pr, Nd, Pm, S m , Eu, Gd, Tb, Dy, Ho, E r , Tm, Yb and Lu are substituted for Y.
Claim 11
Dependent Claim
28 words
The method of growing a film as in claim 1 in which selected regions of the grown film are heated with an energy beam to control crystal orientation.
Claim 12
Dependent Claim
16 words
The method as in claim 10 in which the beam of energy is a laser beam.
Claim 13
Dependent Claim
29 words
The method of growing a film as in claim 1, 2 or 8 in which ions are implanted in selected regions of the grown film to control crystal orientation.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-09 | 1995-03-11 | 1995-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-09 | 1999-03-11 | 1999-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-09 | 2003-03-11 | 2003-09-10 | $7700.00 | Window Closed / Lapsed |